US4708747A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dielectric for laser trimming
Assignee: Intersil Corp
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Filing: 1986-10-16
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Granted: 1987-11-24
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Expires: 2006-10-16
Abstract
Abstract The thickness of the dielectric material of an integrated circuit on top of which is provided a semiconductor layer, is selected to be an integer multiple of one-half the wavelength of the laser light in the dielectric material in order to make the dielectric material layer invisible to the laser-trimming light.
Inventors
- 👤 William E. O'Mara, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:02
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; B; B23; B23K; B23K26/00; B23K26/351; H10P; H10P34/00; H10P34/40; H10P34/42; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/10; Y; Y10; Y10S; Y10S148/00; Y10S148/091; Y10S438/00; Y10S438/94
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
70 words
A method of laser trimming comprising: forming an element of laser-trimmable material above a layer of semiconductor material which is on a layer of dielectric material; and subjecting said element to laser radiation having a wave length aproximately equal to twice the thickness of said layer of dielectric material times the refractive index of said layer of dielectric material divided by an integer to remove portions of said laser-trimmable material.
Claim 2
Independent Claim
70 words
A method of laser trimming comprising: forming an element of laser-trimmable material above a layer of semiconductor material which is on a layer of dielectric material; and subjecting said element to laser radiation having a wave length aproximately equal to twice the thickness of said layer of dielectric material times the refractive index of said layer of dielectric material divided by an integer to remove portions of said laser-trimmable material.
Claim 3
Independent Claim
67 words
A method of laser-trimming comprising: forming an element of laser-trimmable material above a semiconductor island having a layer of dielectric along its bottom; and subjecting said element to laser radiation having a wave length aproximately equal to twice the thickness of said layer of dielectric material times the refractive index of said layer of dielectric material divided by an integer to remove portions of said laser-trimmable material.
Claim 4
Independent Claim
67 words
A method of laser-trimming comprising: forming an element of laser-trimmable material above a semiconductor island having a layer of dielectric along its bottom; and subjecting said element to laser radiation having a wave length aproximately equal to twice the thickness of said layer of dielectric material times the refractive index of said layer of dielectric material divided by an integer to remove portions of said laser-trimmable material.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-23 | 1991-05-25 | 1991-11-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-23 | 1995-05-25 | 1995-11-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-23 | 1999-05-25 | 1999-11-24 | $7700.00 | Window Closed / Lapsed |