US4380864A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for providing in-situ non-destructive monitoring of semiconductors during laser annealing process
Assignee: United States Department of the Air Force
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Filing: 1981-07-27
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Granted: 1983-04-26
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Expires: 2001-07-27
Abstract
Abstract In-situ, non-destructive monitoring of semiconductors during laser annealing process is realized by a method the steps of which include: positioning a surface acoustic wave device adjacent to the semiconductor being annealed and in intercepting relationship with the annealing radiation, the surface acoustic wave device substrate being transparent to the annealing radiation; affixing an electrical contact to the top surface of the semiconductor; applying an r.f. input to the surface acoustic wave device; and measuring the transverse acousto- electrical voltage on the electrical contact. The surface acoustic wave propagation surface of the surface acoustic wave device is in close proximity to the bottom surface of the semiconductor and interaction of the electric field that accompanies the propagating surface acoustic wave with the charge carriers of the semiconductor produces the transverse acoustoelectric voltage. The transverse acoustoelectric voltage is thus a function of the semiconductor conductivity.
Inventors
- 👤 Pankaj K. Das
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 16:42
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; G; G06; G06G; G06G7/00; G06G7/12; G06G7/19; G06G7/195; Y; Y10; Y10S; Y10S148/00; Y10S148/091; Y10S148/093
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
122 words
A method for providing in-situ non-destructive monitoring of semiconductors during annealing process comprising the steps of affixing an electrical contact to the top surface of a semiconductor to be annealed, positioning a surface acoustic wave device having input and output transducers adjacent to said semiconductor, the surface acoustic wave propagating surface of said surface acoustic wave device being in close juxtaposed proximity to the bottom surface of said semiconductor, applying an r.f. input to said surface acoustic wave device input terminal, illuminating the bottom surface of said semiconductor through said surface acoustic wave device with radiant energy to effect annealing thereof, and measuring the transverse acoustoelectric voltage on said electrical contact, said transverse acoustoelectric voltage being a function of said semiconductor conductivity.
Claim 2
Independent Claim
122 words
A method for providing in-situ non-destructive monitoring of semiconductors during annealing process comprising the steps of affixing an electrical contact to the top surface of a semiconductor to be annealed, positioning a surface acoustic wave device having input and output transducers adjacent to said semiconductor, the surface acoustic wave propagating surface of said surface acoustic wave device being in close juxtaposed proximity to the bottom surface of said semiconductor, applying an r.f. input to said surface acoustic wave device input terminal, illuminating the bottom surface of said semiconductor through said surface acoustic wave device with radiant energy to effect annealing thereof, and measuring the transverse acoustoelectric voltage on said electrical contact, said transverse acoustoelectric voltage being a function of said semiconductor conductivity.
Claim 3
Dependent Claim
50 words
A method for providing in-situ non-destructive monitoring of semiconductors during annealing process as defined in claim 1 wherein a surface acoustic wave device having a substrate that is transparent to white and monochromatic radiation is used in the step of positioning a surface acoustic wave device adjacent to said semiconductor.
Claim 4
Dependent Claim
43 words
A method for providing in-situ non-destructive monitoring of semiconductors during annealing process as defined in claim 1 wherein a Y cut Z propagating lithium-niobate substrate type device is used in the step of positioning a surface acoustic wave device adjacent to said semiconductor.
Claim 5
Dependent Claim
29 words
A method for providing in-situ non-destructive monitoring of semiconductors during annealing process as defined in claim 3 including the step of applying a bias voltage to said electrical contact.
Claim 6
Dependent Claim
26 words
A method for providing in-situ non-destructive monitoring of semiconductors during annealing process as defined in claim 4 wherein said semiconductor is illuminated with white light radiation.
Claim 7
Dependent Claim
25 words
A method for providing in-situ non-destructive monitoring of semiconductors during annealing process as defined in claim 4 wherein said semiconductor is illuminated with monochromatic radiation.
Claim 8
Dependent Claim
28 words
A method for providing in-situ non-destructive monitoring of semiconductors during annealing process as defined in claim 6 wherein the semiconductor being annealed is a boron implanted silicon wafer.
References Cited (Backward Citations)
US4055758A
Cited
US4070652A
Cited
US4124828A
Cited
US4101965A
Cited
WO1980000522A1
Cited
US4259726A
Cited
US4233573A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-04-25 | 1986-10-25 | 1987-04-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-04-25 | 1990-10-25 | 1991-04-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-04-25 | 1994-10-25 | 1995-04-26 | $7700.00 | Window Closed / Lapsed |