Semiconductor integrated circuit device formed with a CMOS circuit and a boatstrap capacitor

Claim 2

A semiconductor integrated circuit comprising: a boosting capacitor connected between an output node and a boosting signal node for receiving a boosting signal; a CMOS circuit comprising a first IGFET of a first conductivity type for charging said boosting capacitor and a second IGFET of a second conductivity type for discharging said boosting capacitor, wherein said first and second IGFETs are driven complementarily by an input signal; and a reverse current inhibiting element connected in series with the source-drain path of said first IGFET for preventing the flow of a reverse current through said first IGFET.

Claim 3

A semiconductor integrated circuit according to claim 1, wherein said reverse current inhibiting element comprises a diode.

Claim 4

A semiconductor integrated circuit according to claim 1, wherein said reverse current inhibiting element comprises a switching element.

Claim 5

A semiconductor integrated circuit according to claim 3, wherein said switching element comprises an IGFET.

Claim 6

A semiconductor integrated circuit according to claim 1, wherein said reverse current inhibiting element comprises a third IGFET of said second conductivity type connected between the source-drain path of said first IGFET and said output node, and wherein said circuit further comprises a driving circuit coupled to said third IGFET and including means for driving said third IGFET into an off state in synchronism with a boosting signal supplied at said boosting signal node.

Claim 7

A semiconductor integrated circuit according to claim 5, further comprising a first delay circuit coupled to a driving signal node and to said boosting signal node to generate said boosting signal as a delay signal based on a driving signal at said driving signal node, and wherein said driving circuit is coupled between said driving signal node and a gate of said third IGFET to control said third IGFET in accordance with said driving signal.

Claim 8

A semiconductor integrated circuit according to claim 6, further comprising an input node for receiving said input signal, and a power switching element coupled to have a control terminal coupled to said input node and having a switch current path coupled between a first power supply terminal and said driving circuit.

Claim 9

A semiconductor integrated circuit according to claim 7, wherein said power switching element comprises an IGFET.

Claim 10

A semiconductor integrated circuit according to claim 6, wherein said driving circuit comprises a CMOS inverter having a pair of IGFETs of opposite conductivity each having its gate coupled to said driving signal node, and having their respective source-drain paths coupled in series between said first and second power supply terminals with a node between the respective source-drain paths of said IGFET pair coupled to said gate of said third IGFET.

Claim 11

A semiconductor integrated circuit according to claim 7, wherein said driving circuit comprises a CMOS inverter having a pair of IGFETs of opposite conductivity each havings its gate coupled to said driving signal node, and having their respective source-drain paths coupled in series between said first power supply terminal and a second power supply terminals with a node between the respective source-drain paths of said IGFET pair coupled to said gate of said third IGFET.

Claim 12

A semiconductor integrated circuit according to claim 5, further comprising a transfer IGFET having its source-drain path coupled between the gate of said third IGFET and said driving circuit, and having its gate coupled to a reference potential.

Claim 13

A semiconductor integrated circuit according to claim 11, wherein said transfer IGFET has its gate coupled to a first power supply terminal.

Claim 14

A semiconductor integrated circuit according to claim 11, wherein said driving circuit comprises a CMOS inverter having a pair of IGFETs of opposite conductivity each having its gate coupled to a driving signal node, and having their respective source-drain paths coupled in series between a first and second power supply terminals with a node between the respective source-drain paths of said IGFET pair coupled to said gate of said third IGFET.

Claim 15

A semiconductor integrated circuit according to claim 11, further comprising an input node for receiving said input signal, and a fourth IGFET of said second conductivity type having its gate coupled to said input node having its source-drain path coupled between a first power supply terminal and the gate of said third IGFET.

Claim 16

A semiconductor integrated circuit according to claim 1, further comprising a protecting element coupled between said output node and said source-drain path of said second IGFET.

Claim 17

A semiconductor integrated circuit according to claim 15, wherein said protecting element comprises a protecting IGFET havings its source-drain path coupled in series between said output node and the source-drain path of said second IGFET and having its gate coupled to a reference potential.

Claim 18

A semiconductor integrated circuit according to claim 16, wherein said protecting IGFET gate is coupled to a first power supply terminal.

Claim 19

A semiconductor integrated circuit according to claim 7, further comprising an inverter coupled between said input node and the control terminal of said power switching element.

Claim 20

A semiconductor integrated circuit according to claim 6, further comprising an input node for receiving said input signal, and a second delay circuit coupled between said input node and said driving signal node for generating said driving signal as a delayed signal based on said input signal.

Claim 21

A semiconductor integrated circuit according to claim 1, wherein said reverse current inhibiting element comprises a diode connected IGFET of the second conductivity type.

Claim 22

A semiconductor integrated circuit according to claim 1, wherein said reverse current inhibiting element comprises a diode connected IGFET of the first conductivity type.

Claim 23

A semiconductor integrated circuit according to claim 1, wherein said reverse current inhibiting element comprises a third IGFET having a gate coupled to the gates of said first and second IGFETs and having its source-drain path coupled in series with the source-drain paths of said first and second IGFETs.

Claim 24

A semiconductor integrated circuit according to claim 22, wherein said third IGFET is of said first conductivity type.

Claim 25

A semiconductor integrated circuit according to claim 1, wherein said reverse current inhibiting element is connected in series between said first IGFET and a first power supply terminal.

Claim 26

A semiconductor integrated circuit according to claim 1, wherein said reverse current inhibiting element is connected in series between the first IGFET and the output node.

Claim 27

A semiconductor integrated circuit according to claim 24, wherein said reverse current inhibiting element is an IGFET of the first conductivity type.

Claim 28

A semiconductor integrated circuit according to claim 24, wherein said reverse current inhibiting element is an IGFET of the second conductivity type.

Claim 29

A semiconductor integrated circuit according to claim 25, wherein said reverse current inhibiting element is an IGFET of the first conductivity type.

Claim 30

A semiconductor integrated circuit according to claim 25, wherein said reverse current inhibiting element is an IGFET of the second conductivity type.

Claim 31

A semiconductor integrated circuit comprising: a boosting capacitor connected between an output node of said semiconductor integrated circuit and a boosting signal node for receiving a boosting signal; a CMOS circuit comprising a first IGFET of a first conductivity type for charging said boosting capacitor and a second IGFET of a second conductivity type for discharging said boosting capacitor, wherein said first IGFET has a gate coupled to an input node and has its source-drain path connected in series between a first power supply terminal and said output node, and wherein said second IGFET has a gate coupled to said input node and has its source-drain path connected in series between a second power supply terminal and said output node: a third IGFET of said second conductivity type connected between the source-drain path of said first IGFET and said output node and a driving circuit coupled to a gate of said third IGFET and including means for driving said third IGFET into an off state in synchronism with a boosting signal supplied at said boosting signal node to control said third IGFET to prevent the flow of a reverse current through said first IGFET; a first delay circuit coupled between a driving signal node and said boosting signal node to generate a boosting signal as a delayed signal based on said driving signal applied to said driving signal node, wherein said driving circuit is coupled between said driving signal node and a gate of said third IGFET to control said third IGFET in accordance with said driving signal and wherein said driving circuit comprises a CMOS inverter having a pair of IGFETs of opposite conductivity each having a gate coupled to said driving signal node and having their respective source-drain paths coupled in series between said first and second power supply terminals with a node between the respective source-drain paths of said IGFET pair coupled to said gate of said third IGFET: a transfer IGFET having its source-drain path coupled between the gate of said third IGFET and said driving circuit, and having its gate coupled to a reference potential; and a protecting element coupled between said output node and the source-drain path of said second IGFET.

Claim 32

A semiconductor integrated circuit comprising: a boosting capacitor connected between an output node of said semiconductor integrated circuit and a boosting signal node for receiving a boosting signal; a CMOS circuit comprising a first IGFET of a first conductivity type for charging said boosting capacitor and a second IGFET of a second conductivity type for discharging said boosting capacitor, wherein said first IGFET has a gate coupled to an input node and has its source-drain path connected in series between a first power supply terminal and said output node, and wherein said second IGFET has a gate coupled to said input node and has its source-drain path connected in series between a second power supply terminal and said output node: a third IGFET of said second conductivity type connected between the source-drain path of said first IGFET and said output node and a driving circuit coupled to a gate of said third IGFET and including means for driving said third IGFET into an off state in synchronism with a boosting signal supplied at said boosting signal node to control said third IGFET to prevent the flow of a reverse current through said first IGFET; a first delay circuit coupled between a driving signal node and said boosting signal node to generate a boosting signal as a delayed signal based on said driving signal applied to said driving signal node, wherein said driving circuit is coupled between said driving signal node and a gate of said third IGFET to control said third IGFET in accordance with said driving signal and wherein said driving circuit comprises a CMOS inverter having a pair of IGFETs of opposite conductivity each having a gate coupled to said driving signal node and having their respective source-drain paths coupled in series between said first and second power supply terminals with a node between the respective source-drain paths of said IGFET pair coupled to said gate of said third IGFET: a transfer IGFET having its source-drain path coupled between the gate of said third IGFET and said driving circuit, and having its gate coupled to a reference potential; and a protecting element coupled between said output node and the source-drain path of said second IGFET.

Claim 33

A semiconductor integrated circuit device including a bootstrap circuit which comprises: a first MOSFET of a first conductivity type which receives an input timing signal through the gate thereof, and of which the source is connected to a power-source voltage terminal: a switching MOSFET of a second conductivity type which is connected in series with said first MOSFET; a transfer-gate MMSFET of said second conductivity type which is connected to the gate of said switching MOSFET and to an output node of a CMOS inverter circuit including a pair of MOSFETS of opposite conductivity types to one another which receives a signal that is in synchronism with a bootstrap-start timing signal, the gate of said transfer-gate MOSFET being connected to said power-source voltage terminal; a second MOSFET of said second conductivity type which is connected between the source of said switching MOSFET and a ground-potential point, and which receives said input timing signal through the gate thereof; and a bootstrap capacitor of which one terminal is connected to the source of said switching MOSFET to provide an output signal node and which is supplied with said bootstrap-start timing signal through the other terminal thereof.

Claim 34

A semiconductor integrated circuit device including a bootstrap circuit which comprises: a first MOSFET of a first conductivity type which receives an input timing signal through the gate thereof, and of which the source is connected to a power-source voltage terminal: a switching MOSFET of a second conductivity type which is connected in series with said first MOSFET; a transfer-gate MMSFET of said second conductivity type which is connected to the gate of said switching MOSFET and to an output node of a CMOS inverter circuit including a pair of MOSFETS of opposite conductivity types to one another which receives a signal that is in synchronism with a bootstrap-start timing signal, the gate of said transfer-gate MOSFET being connected to said power-source voltage terminal; a second MOSFET of said second conductivity type which is connected between the source of said switching MOSFET and a ground-potential point, and which receives said input timing signal through the gate thereof; and a bootstrap capacitor of which one terminal is connected to the source of said switching MOSFET to provide an output signal node and which is supplied with said bootstrap-start timing signal through the other terminal thereof.

Claim 35

A semiconductor integrated circuit device according to claim 31, wherein a third MOSFET of said first conductivity type is connected between one of said pair of MOSFETS in said CMOS inverter circuit on the power-source voltage side and said power source voltage terminal, the gate of said third MOSFET being supplied with an inverted signal of said input timing signal.

Claim 36

A semiconductor integrated circuit according to claim 1, wherein said semiconductor integrated circuit is coupled to receive input timing signals at an input node and produces output timing signals at said output node, and wherein said output node is coupled to control the timing of selection circuitry of a semiconductor memory array to select predetermined address locations within said memory array.

Claim 37

A semiconductor integrated circuit according to claim 30, wherein said semiconductor integrated circuit is coupled to receive input timing signals at an input node and produces output timing signals at said output node, and wherein said output node is coupled to control the timing of selection circuitry of a semiconductor memory array to select predetermined address locations within said memory array.

Claim 38

A semiconductor integrated circuit device according to claim 31, wherein said output node is coupled to control the timing of selection circuitry of a semiconductor memory array for selecting predetermined address locations within said memory array.

Claim 39

A semiconductor integrated circuit according to claim 21, wherein said diode connected IGFET has a substrate gate connected to a gate thereof.

Claim 40

A semiconductor integrated circuit according to claim 23, wherein said third IGFET has a substrate gate connected to a drain thereof.