US4707419A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film EL devices and process for producing the same
Assignee: Sharp Corp
•
Filing: 1986-05-27
•
Granted: 1987-11-17
•
Expires: 2006-05-27
Abstract
Abstract The present invention provides a thin film EL device comprising an electrode layer, an emitting layer and an electrode layer formed on a substrate one over another, and an insulating layer interposed between the three layers, the emitting layer containing atoms of a rare-earth element and fluorine atoms in its host material, the atom ratio (F/RE) of the fluorine atoms (F) to the rare-earth atoms (RE) being adjusted to the range of 0.5 to 2.5, and a process for producing the EL device being characterized in that the emitting layer is prepared by forming a film under a condition substantially free from oxygen gas and/or moisture and subjecting the film to a heat treatment at a temperature of 200 DEG C. to 700 DEG C. so that the host material of the emitting layer contains atoms of a rare-earth element (RE) and fluorine atoms (F) in an adjusted atom ratio (F/RE) in the range of 0.5 to 2.5. The present invention affords a thin film EL device which emits, for example, a green luminescence with a high brightness.
Inventors
- 👤 Takashi Ogura
- 👤 Koichi Tanaka
- 👤 Koji Taniguchi
- 👤 Masaru Yoshida
- 👤 Akiyoshi Mikami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 09:47
CPC Classifications
H; H05; H05B; H05B33/00; H05B33/12; H05B33/18; Y; Y10; Y10S; Y10S428/00; Y10S428/917
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
89 words
A thin film electroluminescence device comprising a substrate; a first electrode layer on said substrate; a second electrode layer; interposed between said first and second electrode layers, an emitting layer comprising a host material having distributed therethroughout atoms of a rare earth element and fluorine atoms, the atom ratio (F/RE) of the fluorine atoms (F) to the rare earth atoms (RE) being between 0.5 and 2.5; and an insulating layer interposed between said first electrode layer and said emitting layer and said emitting layer and said second electrode layer.
Claim 2
Dependent Claim
89 words
A thin film electroluminescence device comprising a substrate; a first electrode layer on said substrate; a second electrode layer; interposed between said first and second electrode layers, an emitting layer comprising a host material having distributed therethroughout atoms of a rare earth element and fluorine atoms, the atom ratio (F/RE) of the fluorine atoms (F) to the rare earth atoms (RE) being between 0.5 and 2.5; and an insulating layer interposed between said first electrode layer and said emitting layer and said emitting layer and said second electrode layer.
Claim 3
Dependent Claim
23 words
The thin film electroluminescence device of claim 1, wherein the atom ratio (F/RE) is adjusted in the range of from 1.0 to 2.0.
Claim 4
Dependent Claim
22 words
The thin film electroluminescence device of claim 1, wherein the host material of the emitting layer is ZnS, ZnSe, CaS or CdS.
Claim 5
Dependent Claim
19 words
The thin film electroluminescence device of claim 1, wherein the host material material of the emitting layer is ZnS.
Claim 6
Dependent Claim
19 words
The thin film electroluminescence device of claim 1, wherein the rare earth element is Tb, Sm, Tm, or Pr.
Claim 7
Dependent Claim
15 words
The thin film electroluminescence device of claim 1, wherein the rare earth element is Tb.
Claim 8
Dependent Claim
24 words
The thin film electroluminescence device of claim 4, wherein the host material is doped with 1 to 5 mole % of TbF 3 .
Claim 9
Dependent Claim
72 words
A thin film electroluminescence device comprising a substrate; a first electrode layer on said substrate; a second electrode layer; and interposed between said first and second electrode layers, an emitting layer comprising a host material having distributed therethroughout atoms of a rare earth element and fluorine atoms, the atom ratio (F/RE) of the fluorine atoms (F) to the rare earth atoms (RE) being adjusted in the range of from 0.5 to 2.5.
Claim 10
Dependent Claim
72 words
A thin film electroluminescence device comprising a substrate; a first electrode layer on said substrate; a second electrode layer; and interposed between said first and second electrode layers, an emitting layer comprising a host material having distributed therethroughout atoms of a rare earth element and fluorine atoms, the atom ratio (F/RE) of the fluorine atoms (F) to the rare earth atoms (RE) being adjusted in the range of from 0.5 to 2.5.
Claim 11
Dependent Claim
22 words
The thin film electroluminescence device of claim 8, wherein the host material of the emitting layer is ZnS, ZnSe, CaS or CdS.
Claim 12
Dependent Claim
18 words
The thin film electroluminescence device of claim 8, wherein the host material of the emitting layer is ZnS.
Claim 13
Dependent Claim
19 words
The thin film electroluminescence device of claim 8, wherein the rare earth element is Tb, Sm, Tm or Pr.
Claim 14
Dependent Claim
15 words
The thin film electroluminescence device of claim 8, wherein the rare earth element is Tb.
Claim 15
Dependent Claim
24 words
The thin film electroluminescence device of claim 8, wherein the host material is doped with 1 to 5 mole % of TbF 3 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-16 | 1991-05-18 | 1991-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-16 | 1995-05-18 | 1995-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-16 | 1999-05-18 | 1999-11-17 | $7700.00 | Window Closed / Lapsed |