Abstract A method for manufacturing a semiconductor photoelectric conversion device including forming a first impurity doped non-single crystal semiconductor layer of a first conductivity type on a substrate; forming an intrinsic non-single crystal semiconductor layer on the first semiconductor layer; forming a second impurity doped non-single crystal second conductivity layer type opposite to the first conductivity type on the intrinsic layer; irradiating the outer surface of the second impurity doped semiconductor layer with light energy of suitable wavelength which is effective to selectively crystallize the second impurity doped layer; irradiating the outer surface of the second impurity doped semiconductor layer with light energy of suitable wavelength which is effective to selectively crystallize the intrinsic semiconductor layer, whereby only the portion of the intrinsic semiconductor layer adjacent the impurity doped semiconductor layer is crystallized.
A method for manufacturing a semiconductor photoelectric conversion device comprising the steps of: forming a first impurity doped non-single crystal semiconductor layer of a first conductivity type on a substrate; forming an intrinsic non-single crystal semiconductor layer on said first semiconductor layer; forming a second impurity doped non-single crystal semiconductor layer of a second conductivity type opposite to said first conductivity type on said intrinisc layer; irradiating the outer surface of said second impurity doped semiconductor layer with light energy of suitable wavelength which is effective to selectively crystallize said second impurity doped layer; irradiating the outer surface of said second impurity doped semiconductor layer with light energy of suitable wavelength which is effective to selectively crystallize said intrinsic semiconductor layer, whereby only the portion of said intrinsic semiconductor layer adjacent said second impurity doped semiconductor layer is crystallized.
Claim 2
Independent Claim
139 words
A method for manufacturing a semiconductor photoelectric conversion device comprising the steps of: forming a first impurity doped non-single crystal semiconductor layer of a first conductivity type on a substrate; forming an intrinsic non-single crystal semiconductor layer on said first semiconductor layer; forming a second impurity doped non-single crystal semiconductor layer of a second conductivity type opposite to said first conductivity type on said intrinisc layer; irradiating the outer surface of said second impurity doped semiconductor layer with light energy of suitable wavelength which is effective to selectively crystallize said second impurity doped layer; irradiating the outer surface of said second impurity doped semiconductor layer with light energy of suitable wavelength which is effective to selectively crystallize said intrinsic semiconductor layer, whereby only the portion of said intrinsic semiconductor layer adjacent said second impurity doped semiconductor layer is crystallized.