US4706253A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High speed InGaAsP lasers by gain enhancement doping
Assignee: Verizon Laboratories Inc
•
Filing: 1985-05-15
•
Granted: 1987-11-10
•
Expires: 2005-05-15
Abstract
Abstract A new method for increasing the modulation bandwidth of InGaAsP lasers is described herein. The method of the present invention is based on the gain enhancement doping of the lasers active layer. Lasers with highly doped active regions were demonstrated to have larger modulation bandwidths than lightly doped devices.
Inventors
- 👤 Chin B. Su
- 👤 Vincent A. Lanzisera
- 👤 Richard I. Freeman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 14:58
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/06; H01S5/062; H01S5/06209; H01S5/06213; H01S5/30; H01S5/305; H01S5/3086; H01S5/32; H01S5/323; H01S5/3235; H01S5/32391
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
105 words
In a high speed InGaAsP semiconductor laser comprising: (a) an n-type InP substrate; (b) an n-type InP confinement layer; (c) a p-type active layer of the formula: Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y wherein; 0<x≦0.27 and 0<y≦0.59; (d) a p-type InP confinement layer; and (e) a p-type InGaAsP cap layer; the improvement comprising: doping said active layer with a p-type dopant, at an impurity concentration of at least about 2.5×10 18 cm -3 such that the modulation bandwith of said laser is increased according to the equation: BW=√(A)(P.sub.b /L) wherein, P b is the bias optical power, L the laser cavity length, and A the gain constant.
Claim 2
Dependent Claim
105 words
In a high speed InGaAsP semiconductor laser comprising: (a) an n-type InP substrate; (b) an n-type InP confinement layer; (c) a p-type active layer of the formula: Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y wherein; 0<x≦0.27 and 0<y≦0.59; (d) a p-type InP confinement layer; and (e) a p-type InGaAsP cap layer; the improvement comprising: doping said active layer with a p-type dopant, at an impurity concentration of at least about 2.5×10 18 cm -3 such that the modulation bandwith of said laser is increased according to the equation: BW=√(A)(P.sub.b /L) wherein, P b is the bias optical power, L the laser cavity length, and A the gain constant.
Claim 3
Dependent Claim
19 words
The InGaAsP semiconductor laser of claim 1, wherein the active layer has the nominal formula: Ga.sub.0.27 In.sub.0.73 As.sub.0.59 P.sub.0.41
Claim 4
Dependent Claim
18 words
The InGaAsP semiconductor laser of claim 1, wherein said p-type dopant concentration is 2.5×10 18 cm -3 .
Claim 5
Dependent Claim
15 words
The InGaAsP semiconductor laser of claim 1, wherein said laser is a VPR-BH type structure.
Claim 6
Dependent Claim
13 words
The InGaAsP semiconductor laser of claim 1, wherein the p-type dopant is Zinc.
Claim 7
Dependent Claim
13 words
The InGaAsP semiconductor laser of claim 2, wherein the p-type dopant is Zinc.
Claim 8
Dependent Claim
13 words
The InGaAsP semiconductor laser of claim 3, wherein the p-type dopant is Zinc.
Claim 9
Dependent Claim
13 words
The InGaAsP semiconductor laser of claim 4, wherein the p-type dopant is Zinc.
Claim 10
Independent Claim
42 words
A method of increasing laser modulation bandwidth in a high speed InGaAsP semiconductor laser comprising; doping the active layer of said laser with a p-type dopant at an impurity concentration level greater than or equal to about 2.5×10 18 cm -3 .
Claim 11
Independent Claim
42 words
A method of increasing laser modulation bandwidth in a high speed InGaAsP semiconductor laser comprising; doping the active layer of said laser with a p-type dopant at an impurity concentration level greater than or equal to about 2.5×10 18 cm -3 .
Claim 12
Dependent Claim
18 words
The method of claim 9, wherein the InGaAsP laser active layer has the formula: Ga.sub.0.27 In.sub.0.73 As.sub.0.59 P.sub.0.41.
Claim 13
Dependent Claim
13 words
The method of claim 9, wherein said laser is a VPR-BH type sructure.
Claim 14
Dependent Claim
11 words
The method of claim 9, wherein the p-type dopant is Zinc.
Claim 15
Dependent Claim
11 words
The method of claim 10, wherein the p-type dopant is Zinc.
Claim 16
Dependent Claim
11 words
The method of claim 11, wherein the p-type dopant is Zinc.
References Cited (Backward Citations)
US4132960A
Cited
US4426700A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-09 | 1991-05-11 | 1991-11-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-09 | 1995-05-11 | 1995-11-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-09 | 1999-05-11 | 1999-11-10 | $7700.00 | Window Closed / Lapsed |