US4706104A
Expired / Lapsed
US
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Electrical contacts containing thallium (III) oxide
Assignee: Union Oil Company of California
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Filing: 1985-10-21
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Granted: 1987-11-10
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Expires: 2005-10-21
Abstract
Abstract Electronic semiconductor devices are prepared having contacts forming rectifying and non-rectifying junctions between thallium (III) oxide and semiconductors. Such contacts may be formed at relatively low temperatures during preparation of bipolar, unipolar and microwave semiconductor devices.
Inventors
- 👤 Jay A. Switzer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 23:44
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/164; H10F19/00; H10F19/20; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
24 words
An electronic semiconductor device having at least one contact forming a non-rectifying junction, said non-rectifying junction containing thallium (III) oxide and a p-type semiconductor.
Claim 2
Dependent Claim
24 words
An electronic semiconductor device having at least one contact forming a non-rectifying junction, said non-rectifying junction containing thallium (III) oxide and a p-type semiconductor.
Claim 3
Dependent Claim
23 words
The device defined in claim 1 wherein said p-type semiconductor is selected from the group consisting of silicon, GaAs, InP, CdSe and GaP.
Claim 4
Dependent Claim
13 words
The device defined in claim 1 wherein said p-type semiconductor is p-type silicon.
Claim 5
Dependent Claim
17 words
The device defined in claim 1 selected from the group consisting of unipolar, bipolar and microwave devices.
Claim 6
Dependent Claim
19 words
The device defined in claim 1 wherein said contact has a resistance less than about 10 ohm-cm 2 .
Claim 7
Dependent Claim
29 words
The device defined in claim 1 further comprising at least one additional contact forming a rectifying junction wherein said additional contact contains thallium (III) oxide and an n-type semiconductor.
Claim 8
Dependent Claim
13 words
The device defined in claim 1 used in very large scale integrated circuits.
Claim 9
Dependent Claim
24 words
An electronic semiconductor device having at least one contact forming a rectifying junction, said rectifying junction containing thallium (III) oxide and an n-type semiconductor.
Claim 10
Dependent Claim
24 words
An electronic semiconductor device having at least one contact forming a rectifying junction, said rectifying junction containing thallium (III) oxide and an n-type semiconductor.
Claim 11
Dependent Claim
23 words
The device defined in claim 8 wherein said n-type semiconductor is selected from the group consisting of silicon, GaAs, InP, CdSe and GaP.
Claim 12
Dependent Claim
13 words
The device defined in claim 8 wherein said n-type semiconductor is n-type silicon.
Claim 13
Dependent Claim
17 words
The device defined in claim 8 selected from the group consisting of unipolar, bipolar and microwave devices.
Claim 14
Dependent Claim
20 words
The device defined in claim 8 wherein said contact has a diode quality factor from about 1.0 to about 2.0.
Claim 15
Dependent Claim
18 words
The device defined in claim 8 wherein said contact has a breakdown voltage greater than about +9.0 V.
Claim 16
Dependent Claim
13 words
The device defined in claim 8 used in very large scale integrated circuits.
Claim 17
Independent Claim
44 words
A method for producing an electronic semiconductor device comprising the step of depositing solid n-type degenerate thallium (III) oxide onto a surface of a p-type semiconductor component of said device so as to form a non-rectifying junction with said surface of said semiconductor component.
Claim 18
Independent Claim
44 words
A method for producing an electronic semiconductor device comprising the step of depositing solid n-type degenerate thallium (III) oxide onto a surface of a p-type semiconductor component of said device so as to form a non-rectifying junction with said surface of said semiconductor component.
Claim 19
Dependent Claim
23 words
The method defined in claim 15 wherein said electronic semiconductor device is selected from the group consisting of unipolar, bipolar and microwave devices.
Claim 20
Dependent Claim
16 words
The method defined in claim 15 used in the preparation of very large scale integrated circuits.
Claim 21
Independent Claim
44 words
A method for producing an electronic semiconductor device comprising the step of depositing solid n-type degenerate thallium (III) oxide onto a surface of a n-type semiconductor component of said device so as to form a rectifying junction with said surface of said semiconductor component.
Claim 22
Independent Claim
44 words
A method for producing an electronic semiconductor device comprising the step of depositing solid n-type degenerate thallium (III) oxide onto a surface of a n-type semiconductor component of said device so as to form a rectifying junction with said surface of said semiconductor component.
Claim 23
Dependent Claim
23 words
The method defined in claim 18 wherein said electronic semiconductor device is selected from the group consisting of unipolar, bipolar and microwave devices.
Claim 24
Dependent Claim
17 words
The method defined in claim 18 is used in the preparation of very large scale integrated circuits.
Claim 25
Dependent Claim
28 words
The device defined in claim 8 wherein said rectifying junction has a barrier height at least 70 percent of that of the band gap of said n-type semiconductor.
Claim 26
Dependent Claim
28 words
The device defined in claim 8 wherein said rectifying junction has a barrier height at least 80 percent of that of the band gap of said n-type semiconductor.
Claim 27
Dependent Claim
28 words
The device defined in claim 8 wherein said rectifying junction has a barrier height at least 90 percent of that of the band gap of said n-type semiconductor.
References Cited (Backward Citations)
US4492811A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-09 | 1991-05-11 | 1991-11-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-09 | 1995-05-11 | 1995-11-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-09 | 1999-05-11 | 1999-11-10 | $7700.00 | Window Closed / Lapsed |