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US4706103A
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Bipolar electrode scheme for electro-optic semiconductor waveguide devices
Assignee: Raytheon Co
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Filing: 1985-06-17
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Granted: 1987-11-10
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Expires: 2005-06-17
Abstract
Abstract A pair of rectifying electrodes (20) are formed on the surface (23) of a semiconductor waveguide device (10) around the waveguide region (18). Rectifying Schottky contacts (22) or p-n junctions (24) can be utilized. A bipolar voltage signal (30) is applied across the rectifying electrodes (20), reducing the voltage and power requirements and producing a bipolar electric field transversely across the waveguide (18). The electrode scheme (20) also provides low microwave loss.
Inventors
- 👤 Tirumala R. Ranganath
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:08
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/015; G02F1/025
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
45 words
An electrode assembly for applying a bipolar electric field to an electro-optical waveguide region formed in a semiconductor structure, comprising a pair of rectifying electrodes formed on the semiconductor structure about the waveguide region; and means for applying a bipolar voltage exclusively across said electrodes.
Claim 2
Dependent Claim
45 words
An electrode assembly for applying a bipolar electric field to an electro-optical waveguide region formed in a semiconductor structure, comprising a pair of rectifying electrodes formed on the semiconductor structure about the waveguide region; and means for applying a bipolar voltage exclusively across said electrodes.
Claim 3
Dependent Claim
21 words
The electrode assembly of claim 1 wherein the pair of electrodes are formed on a single surface of the semiconductor structure.
Claim 4
Dependent Claim
14 words
The electrode assembly of claim 2 wherein the pair of electrodes are substantially coplanar.
Claim 5
Dependent Claim
13 words
The electrode assembly of claim 1 wherein the rectifying electrodes are Schottky contacts.
Claim 6
Dependent Claim
13 words
The electrode assembly of claim 1 wherein the rectifying electrodes are p-n junctions.
Claim 7
Dependent Claim
23 words
The electrode assembly of claim 1 wherein the means for applying said bipolar voltage comprises a voltage source exclusively connected across the electrodes.
Claim 8
Dependent Claim
87 words
A semiconductor waveguide device, responsive to bipolar voltages applied to a waveguide region in said waveguide device, said device comprising: a plurality of layers of semiconductor material, including a substrate of undoped highly resistive semiconductor material, an intermediate layer of undoped highly resistive semiconductor material formed on the substrate, and an upper layer of undoped highly resistive semiconductor material formed on the intermediate layer, said layers defining a waveguide region therein; and a pair of rectifying electrodes formed back-to-back on said semiconductor material around the waveguide region.
Claim 9
Dependent Claim
87 words
A semiconductor waveguide device, responsive to bipolar voltages applied to a waveguide region in said waveguide device, said device comprising: a plurality of layers of semiconductor material, including a substrate of undoped highly resistive semiconductor material, an intermediate layer of undoped highly resistive semiconductor material formed on the substrate, and an upper layer of undoped highly resistive semiconductor material formed on the intermediate layer, said layers defining a waveguide region therein; and a pair of rectifying electrodes formed back-to-back on said semiconductor material around the waveguide region.
Claim 10
Dependent Claim
16 words
The waveguide device of claim 7 wherein the rectifying electrodes are formed on a single surface.
Claim 11
Dependent Claim
13 words
The waveguide device of claim 7 wherein the rectifying electrodes are Schottky contacts.
Claim 12
Dependent Claim
13 words
The waveguide device of claim 7 wherein the rectifying electrodes are p-n junctions.
Claim 13
Dependent Claim
101 words
A semiconductor waveguide device responsive to bipolar voltages applied to a waveguide region in said waveguide device, said device comprising: a plurality of layers of semiconductor material defining said waveguide region therein, wherein said layers comprise a substrate of undoped highly resistive GaAs, an intermediate layer of undoped highly resistive AlyGa 1-y As formed on the substrate, and an upper layer of undoped highly resitive Al x Ga 1-x As (x<y) formed on the intermediate layer, the waveguide region being formed in the upper layer; and a pair of rectifying electrodes formed back-to-back on said semiconductor material around the waveguide region.
Claim 14
Dependent Claim
101 words
A semiconductor waveguide device responsive to bipolar voltages applied to a waveguide region in said waveguide device, said device comprising: a plurality of layers of semiconductor material defining said waveguide region therein, wherein said layers comprise a substrate of undoped highly resistive GaAs, an intermediate layer of undoped highly resistive AlyGa 1-y As formed on the substrate, and an upper layer of undoped highly resitive Al x Ga 1-x As (x<y) formed on the intermediate layer, the waveguide region being formed in the upper layer; and a pair of rectifying electrodes formed back-to-back on said semiconductor material around the waveguide region.
Claim 15
Dependent Claim
13 words
The waveguide device of claim 7 wherein the waveguide region is substantially depleted.
Claim 16
Dependent Claim
27 words
The waveguide device of claim 7 further including a voltage source connected exclusively across the electrodes for applying a bipolar electric field transversely to the waveguide region.
Claim 17
Independent Claim
90 words
A method for applying a bipolar electric field across a waveguide region in a semiconductor device having a substrate of undoped highly resistive semiconductor material, an intermediate layer of undoped highly resistive semiconductor material formed on the substrate, and an upper layer of undoped highly resistive semiconductor material formed on the intermediate layer, the waveguide region being formed in the upper layer, said method comprising: forming a pair of rectifying electrodes on the semiconductor device around the waveguide region; and applying a bipolar voltage signal across the pair of electrodes.
Claim 18
Independent Claim
90 words
A method for applying a bipolar electric field across a waveguide region in a semiconductor device having a substrate of undoped highly resistive semiconductor material, an intermediate layer of undoped highly resistive semiconductor material formed on the substrate, and an upper layer of undoped highly resistive semiconductor material formed on the intermediate layer, the waveguide region being formed in the upper layer, said method comprising: forming a pair of rectifying electrodes on the semiconductor device around the waveguide region; and applying a bipolar voltage signal across the pair of electrodes.
Claim 19
Dependent Claim
13 words
The method of claim 14 wherein the electrodes are formed by Schottky contacts.
Claim 20
Dependent Claim
13 words
The method of claim 14 wherein the electrodes are formed by p-n junctions.
Claim 21
Dependent Claim
16 words
The method of claim 14 further comprising forming the waveguide region in a substantially depleted region.
Claim 22
Dependent Claim
17 words
The method of claim 14 further comprising applying the voltage signal substantially transversely across the waveguide region.
Claim 23
Dependent Claim
50 words
A semiconductor waveguide device, responsive to bipolar voltages applied to a waveguide region in said waveguide device, said device comprising: a plurality of layers of semiconductor material defining a waveguide region therein; and a pair of rectifying electrodes formed back-to-back on the semiconductor material on top of the waveguide region.
Claim 24
Dependent Claim
50 words
A semiconductor waveguide device, responsive to bipolar voltages applied to a waveguide region in said waveguide device, said device comprising: a plurality of layers of semiconductor material defining a waveguide region therein; and a pair of rectifying electrodes formed back-to-back on the semiconductor material on top of the waveguide region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-09 | 1991-05-11 | 1991-11-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-09 | 1995-05-11 | 1995-11-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-09 | 1999-05-11 | 1999-11-10 | $7700.00 | Window Closed / Lapsed |