US4703336A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photodetection and current control devices
Assignee: Energy Conversion Devices Inc
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Filing: 1986-04-17
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Granted: 1987-10-27
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Expires: 2006-04-17
Abstract
Abstract A photodetection device and a current control device, both including means responsive to the intensity of incident radiation for providing an output signal corresponding thereto. The responsive means includes a thin semiconductor film comprising a solid amorphous silicon or amorphous germanium host matrix having electronic configurations and an energy gap. At least one compensating element is introduced into that matrix for reducing the density of states in the energy gap thereof.
Inventors
- 👤 Stanford R. Ovshinsky
- 👤 Arun Madan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 21:16
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10F; H10F71/00; H10F71/10; H10F71/103; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2923; H10P14/32; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
69 words
A photodetection device comprising: means responsive to the intensity of incident radiation for providing a corresponding output signal, said responsive means including a thin semiconductor film comprising a solid amorphous silicon or amorphous germanium host matrix having electronic configurations with an energy gap; said host matrix of the amorphous semiconductor material further including at least one compensating element for reducing the density of localized states in said energy gap.
Claim 2
Dependent Claim
69 words
A photodetection device comprising: means responsive to the intensity of incident radiation for providing a corresponding output signal, said responsive means including a thin semiconductor film comprising a solid amorphous silicon or amorphous germanium host matrix having electronic configurations with an energy gap; said host matrix of the amorphous semiconductor material further including at least one compensating element for reducing the density of localized states in said energy gap.
Claim 3
Dependent Claim
23 words
A device as in claim 1 wherein said compensating elements are chosen from the group consisting essentially of hydrogen, fluorine, and combinations thereof.
Claim 4
Dependent Claim
44 words
A photoresponsive device as in claim 1 wherein said thin film alloy material is adapted to generate electron-hole pairs in response to the absorption for incident radiation so as to provide for a flow of electrical current corresponding to the intensity of said radiation.
Claim 5
Dependent Claim
26 words
A photoresponsive device as in claim 3 further including a circuit in which current may be controlled in accordance with the intensity of the incident radiation.
Claim 6
Dependent Claim
20 words
A device as in claim 1 further including means adapted to provide a voltage across the thin film alloy material.
Claim 7
Dependent Claim
22 words
A device as in claim 5, wherein said voltage providing means include at least one electrode electrically communicating with said semiconductor film.
Claim 8
Dependent Claim
16 words
A device as in claim 6, wherein at least one of said electrodes is light transmitting.
Claim 9
Dependent Claim
21 words
A device as in claim 1, further including an anti-reflective film on the light incident side of the thin film material.
Claim 10
Dependent Claim
27 words
A device as in claim 8, further including a heavily doped semiconductor alloy material disposed between the film semiconductor and the electrode opposite the light incident electrode.
Claim 11
Dependent Claim
13 words
A device as in claim 9, wherein said heavily doped material is N+material.
Claim 12
Dependent Claim
24 words
A device as in claim 1, further including means adapted to provide for a flow of electric current through the thin film alloy material.
Claim 13
Dependent Claim
17 words
A device as in claim 1, wherein said thin film material is of low dark electrical conductivity.
Claim 14
Dependent Claim
17 words
A device as in claim 1, wherein said thin film material is of high light electrical conductivity.
Claim 15
Dependent Claim
14 words
A device as in claim 1, wherein the semiconductor film is a p-n diode.
Claim 16
Dependent Claim
14 words
A device as in claim 1, wherein the semiconductor film is a p-i-n diode.
Claim 17
Dependent Claim
16 words
A device as in claim 1, wherein the semiconductor film is part of a Schottky barrier.
Claim 18
Dependent Claim
70 words
A current control device comprising means responsive to the intensity of incident radiation for providing a corresponding output signal, said responsive means including a thin semiconductor film comprising a solid amorphous silicon or amorphous germanium host matrix having electronic configurations with an energy gap; said host matrix of the amorphous semiconductor material further including at least one compensating element for reducing the density of localized states in said energy gap.
Claim 19
Dependent Claim
70 words
A current control device comprising means responsive to the intensity of incident radiation for providing a corresponding output signal, said responsive means including a thin semiconductor film comprising a solid amorphous silicon or amorphous germanium host matrix having electronic configurations with an energy gap; said host matrix of the amorphous semiconductor material further including at least one compensating element for reducing the density of localized states in said energy gap.
Claim 20
Dependent Claim
14 words
A device as in claim 17, wherein the semiconductor film is a p-n diode.
Claim 21
Dependent Claim
14 words
A device as in claim 17, wherein the semiconductor film is a p-i-n diode.
Claim 22
Dependent Claim
16 words
A device as in claim 17, wherein the semiconductor film is part of a Schottky barrier.
References Cited (Backward Citations)
US4409605A
Cited
US4520380A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-10-26 | 1991-04-27 | 1991-10-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-10-26 | 1995-04-27 | 1995-10-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-10-26 | 1999-04-27 | 1999-10-27 | $7700.00 | Window Closed / Lapsed |