US4520380A
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Amorphous semiconductors equivalent to crystalline semiconductors
Assignee: Sovonics Solar Systems
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Filing: 1983-10-07
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Granted: 1985-05-28
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Expires: 2003-10-07
Abstract
Abstract An amorphous semiconductor body, most advantageously a glow discharge deposited silicon-containing host matrix film, is provided containing at least fluorine as a compensating or altering agent, and most preferably at least one complementary compensating or altering agent, such as hydrogen, both of which reduce the localized defect states in the energy gap of the amorphous semiconductor material to a degree which either one alone could not achieve. The silicon and/or other elements of the host matrix film are deposited by the glow discharge decomposition of gaseous compounds preferably with fluorine as one element of a compound, the hydrogen and other compensating and altering material being preferably a molecular gas or an element of a compound of silicon or other host matrix element.
Inventors
- 👤 Stanford R. Ovshinsky
- 👤 Arun Madan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 04:34
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10D; H10D62/00; H10D62/40; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2923; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 60
Claim 1
Independent Claim
86 words
A semiconductor film comprising a solid amorphous semiconductor host matrix including silicon and having electronic configurations which have an energy gap and a density of localized defect states therein, said amorphous semiconductor host matrix including at least two compensating or alterant elements, wherein said compensating or alterant elements are incorporated in said amorphous semiconductor host matrix, yielding an amorphous semiconductor material having electronic configurations with a reduced density of localized defect states in the energy gap, said density of states reducing elements being fluorine and hydrogen.
Claim 2
Dependent Claim
86 words
A semiconductor film comprising a solid amorphous semiconductor host matrix including silicon and having electronic configurations which have an energy gap and a density of localized defect states therein, said amorphous semiconductor host matrix including at least two compensating or alterant elements, wherein said compensating or alterant elements are incorporated in said amorphous semiconductor host matrix, yielding an amorphous semiconductor material having electronic configurations with a reduced density of localized defect states in the energy gap, said density of states reducing elements being fluorine and hydrogen.
Claim 3
Dependent Claim
56 words
The film as defined in claim 1 wherein said film is a multi-layer film of successively deposited layers of opposite (p and n) conductivity type, the n-type layer including an n-dopant element in the layer to produce an n-type layer and the p-type layer including a p-dopant element in the layer to produce a p-type layer.
Claim 4
Dependent Claim
32 words
The film as defined in claim 1 wherein there is deposited between said p and n doped layers an intrinsic amorphous alloy layer without a p or n dopant element present therein.
Claim 5
Dependent Claim
32 words
The film as defined in claim 1 wherein said film includes at least one of an n or p conductivity region therein, said region including an n or p dopant element therein.
Claim 6
Dependent Claim
17 words
The film as defined in claim 4 wherein said film forms part of a p-n junction device.
Claim 7
Dependent Claim
16 words
The film as defined in claim 4 wherein said film forms part of a photoresponsive device.
Claim 8
Dependent Claim
16 words
The film as defined in claim 4 wherein said film forms part of a photovoltaic device.
Claim 9
Dependent Claim
15 words
The film as defined in claim 4 wherein said film forms part of a photodetector.
Claim 10
Dependent Claim
15 words
The film as defined in claim 4 wherein said film forms part of a transistor.
Claim 11
Dependent Claim
30 words
An improved semiconductor amorphous alloy, said alloy including silicon and incorporating at least two density of states reducing elements therein, said density of states reducing elements being fluorine and hydrogen.
Claim 12
Dependent Claim
30 words
An improved semiconductor amorphous alloy, said alloy including silicon and incorporating at least two density of states reducing elements therein, said density of states reducing elements being fluorine and hydrogen.
Claim 13
Dependent Claim
56 words
The alloy as defined in claim 10 wherein said alloy is a multi-layer alloy of successively deposited layers of opposite (p and n) conductivity type, the n-type layer including an n-dopant element in the layer to produce an n-type layer and the p-type layer including a p-dopant element in the layer to produce a p-type layer.
Claim 14
Dependent Claim
32 words
The alloy as defined in claim 11 wherein there is deposited between said p and n doped layers an intrinsic amorphous alloy layer without a p or n dopant element present therein.
Claim 15
Dependent Claim
32 words
The alloy as defined in claim 10 wherein said alloy includes at least one of an n or p conductivity region therein, said region including an n or p dopant element therein.
Claim 16
Dependent Claim
17 words
The alloy as defined in claim 13 wherein said alloy forms part of a p-n junction device.
Claim 17
Dependent Claim
16 words
The alloy as defined in claim 13 wherein said alloy forms part of a photoresponsive device.
Claim 18
Dependent Claim
16 words
The alloy as defined in claim 13 wherein said alloy forms part of a photovoltaic device.
Claim 19
Dependent Claim
15 words
The alloy as defined in claim 13 wherein said alloy forms part of a photodetector.
Claim 20
Dependent Claim
15 words
The alloy as defined in claim 13 wherein said alloy forms part of a transistor.
Claim 21
Dependent Claim
61 words
An improved photoresponsive device, said device comprising superimposed layers of various materials including an amorphous semiconductor alloy body having an active photoresponsive region including a band gap therein upon which radiation can impinge to produce charge carriers, said amorphous alloy including silicon and at least two density of states reducing elements, said density of states reducing elements being fluorine and hydrogen.
Claim 22
Dependent Claim
61 words
An improved photoresponsive device, said device comprising superimposed layers of various materials including an amorphous semiconductor alloy body having an active photoresponsive region including a band gap therein upon which radiation can impinge to produce charge carriers, said amorphous alloy including silicon and at least two density of states reducing elements, said density of states reducing elements being fluorine and hydrogen.
Claim 23
Dependent Claim
58 words
The device as defined in claim 19 wherein said alloy body is a multi-layer body formed of successively deposited layers of opposite (p and n) conductivity type, the n-type layer including an n-dopant element in the layer to produce an n-type layer and the p-type layer including a p-dopant element in the layer to produce a p-type layer.
Claim 24
Dependent Claim
32 words
The device as defined in claim 20 wherein there is deposited between said p and n doped layers an intrinsic amorphous alloy layer without a p or n dopant element present therein.
Claim 25
Dependent Claim
32 words
The device as defined in claim 19 wherein said body includes at least one of an n or p conductivity region therein, said region including an n or p dopant element therein.
Claim 26
Dependent Claim
17 words
The device as defined in claim 22 wherein said body forms part of a p-n junction device.
Claim 27
Dependent Claim
16 words
The device as defined in claim 22 wherein said body forms part of a photoresponsive device.
Claim 28
Dependent Claim
16 words
The device as defined in claim 22 wherein said device forms part of a photovoltaic device.
Claim 29
Dependent Claim
15 words
The device as defined in claim 22 wherein said device forms part of a photodetector.
Claim 30
Dependent Claim
15 words
The device as defined in claim 22 wherein said device forms part of a transistor.
Claim 31
Dependent Claim
30 words
An improved semiconductor amorphous alloy, said alloy including germanium and incorporating at least two density of states reducing elements therein, said density of states reducing elements being fluorine and hydrogen.
Claim 32
Dependent Claim
30 words
An improved semiconductor amorphous alloy, said alloy including germanium and incorporating at least two density of states reducing elements therein, said density of states reducing elements being fluorine and hydrogen.
Claim 33
Dependent Claim
56 words
The alloy as defined in claim 28 wherein said alloy is a multi-layer alloy of successively deposited layers of opposite (p and n) conductivity type, the n-type layer including an n-dopant element in the layer to produce an n-type layer and the p-type layer including a p-dopant element in the layer to produce a p-type layer.
Claim 34
Dependent Claim
32 words
The alloy as defined in claim 29 wherein there is deposited between said p and n doped layers an intrinsic amorphous alloy layer without a p or n dopant element present therein.
Claim 35
Dependent Claim
32 words
The alloy as defined in claim 28 wherein said alloy includes at least one of an n or p conductivity region therein, said region including an n or p dopant element therein.
Claim 36
Dependent Claim
17 words
The alloy as defined in claim 31 wherein said alloy forms part of a p-n junction device.
Claim 37
Dependent Claim
16 words
The alloy as defined in claim 31 wherein said alloy forms part of a photoresponsive device.
Claim 38
Dependent Claim
16 words
The alloy as defined in claim 31 wherein said alloy forms part of a photovoltaic device.
Claim 39
Dependent Claim
15 words
The alloy as defined in claim 31 wherein said alloy forms part of a photodetector.
Claim 40
Dependent Claim
15 words
The alloy as defined in claim 31 wherein said alloy forms part of a transistor.
Claim 41
Dependent Claim
86 words
A semiconductor film comprising a solid amorphous semiconductor host matrix including germanium and having electronic configurations which have an energy gap and a density of localized defect states therein, said amorphous semiconductor host matrix including at least two compensating or alterant elements, wherein said compensating or alterant elements are incorporated in said amorphous semiconductor host matrix, yielding an amorphous semiconductor material having electronic configurations with a reduced density of localized defect states in the energy gap, said density of states reducing elements being fluorine and hydrogen.
Claim 42
Dependent Claim
86 words
A semiconductor film comprising a solid amorphous semiconductor host matrix including germanium and having electronic configurations which have an energy gap and a density of localized defect states therein, said amorphous semiconductor host matrix including at least two compensating or alterant elements, wherein said compensating or alterant elements are incorporated in said amorphous semiconductor host matrix, yielding an amorphous semiconductor material having electronic configurations with a reduced density of localized defect states in the energy gap, said density of states reducing elements being fluorine and hydrogen.
Claim 43
Dependent Claim
56 words
The film as defined in claim 37 wherein said film is a multi-layer film of successively deposited layers of opposite (p and n) conductivity type, the n-type layer including an n-dopant element in the layer to produce an n-type layer and the p-type layer including a p-dopant element in the layer to produce a p-type layer.
Claim 44
Dependent Claim
32 words
The film as defined in claim 38 wherein there is deposited between said p and n doped layers an intrinsic amorphous alloy layer without a p or n dopant element present therein.
Claim 45
Dependent Claim
32 words
The film as defined in claim 37 wherein said film includes at least one of an n or p conductivity region therein, said region including an n or p dopant element therein.
Claim 46
Dependent Claim
17 words
The film as defined in claim 40 wherein said film forms part of a p-n junction device.
Claim 47
Dependent Claim
16 words
The film as defined in claim 40 wherein said film forms part of a photoresponsive device.
Claim 48
Dependent Claim
16 words
The film as defined in claim 40 wherein said film forms part of a photovoltaic device.
Claim 49
Dependent Claim
15 words
The film as defined in claim 40 wherein said film forms part of a photodetector.
Claim 50
Dependent Claim
15 words
The film as defined in claim 40 wherein said film forms part of a transistor.
Claim 51
Dependent Claim
61 words
An improved photoresponsive device, said device comprising superimposed layers of various materials including an amorphous semiconductor alloy body having an active photoresponsive region including a band gap therein upon which radiation can impinge to produce charge carriers, said amorphous alloy including germanium and at least two density of states reducing elements, said density of states reducing elements being fluorine and hydrogen.
Claim 52
Dependent Claim
61 words
An improved photoresponsive device, said device comprising superimposed layers of various materials including an amorphous semiconductor alloy body having an active photoresponsive region including a band gap therein upon which radiation can impinge to produce charge carriers, said amorphous alloy including germanium and at least two density of states reducing elements, said density of states reducing elements being fluorine and hydrogen.
Claim 53
Dependent Claim
59 words
The device as defined in claim 46 wherein said alloy body is a multi-layer body formed of successively deposited layers of opposite (p and n) conductivity type, the n-type layer including an n-dopant element in the deposited layer to produce an n-type layer and the p-type layer including a p-dopant element in the layer to produce a p-type layer.
Claim 54
Dependent Claim
32 words
The device as defined in claim 47 wherein there is deposited between said p and n doped layers an intrinsic amorphous alloy layer without a p or n dopant element present therein.
Claim 55
Dependent Claim
32 words
The device as defined in claim 46 wherein said body includes at least one of an n or p conductivity region therein, said region including an n or p dopant element therein.
Claim 56
Dependent Claim
17 words
The device as defined in claim 49 wherein said body forms part of a p-n junction device.
Claim 57
Dependent Claim
16 words
The device as defined in claim 49 wherein said body forms part of a photoresponsive device.
Claim 58
Dependent Claim
16 words
The device as defined in claim 49 wherein said device forms part of a photovoltaic device.
Claim 59
Dependent Claim
15 words
The device as defined in claim 49 wherein said device forms part of a photodetector.
Claim 60
Dependent Claim
15 words
The device as defined in claim 49 wherein said device forms part of a transistor.
References Cited (Backward Citations)
US4409605A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-05-27 | 1988-11-26 | 1989-05-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-05-27 | 1992-11-26 | 1993-05-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-05-27 | 1996-11-26 | 1997-05-28 | $7700.00 | Window Closed / Lapsed |