Patent US4703170A successfully refreshed from Google Patents.
US4703170A
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US
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Infrared focal plane module
Assignee: Grumman Corp
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Filing: 1986-09-15
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Granted: 1987-10-27
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Expires: 2006-09-15
Abstract
Abstract An infrared focal plane module as disclosed for interfacing a plurality of detector elements to external electronics. The module comprises a plurality of integrated circuits disposed in substantially overlapping registry to form a module body, each of the integrated circuits is formed to include a layer of semi-conductive material such as silicon disposed upon a major surface of an insulating substrate, e.g. sapphire, to form electronic circuits. Each of the integrated circuits further includes conductive areas formed along first and second edge portions of the substrate to communicate electrical signals to and from the integrated circuit.
Inventors
- 👤 Charles E. Schmitz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:52
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/107; H10W; H10W90/00
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
104 words
An infrared focal plane module for interfacing a plurality of detector elements to external electronics comprising: a plurality of integrated circuits disposed in substantially overlapping registry to form a module body, each of said integrated circuits comprising a layer of semi-conductive material disposed upon a major surface of an insulating substrate to form electronic circuits upon the surface of the substrate, each of said integrated circuits further comprising conductive areas formed along first and second edge portions of said substrate, said conductive areas being formed to communicate electrical signals to and from said integrated circuits; and an insulating layer disposed between adjacent integrated circuits.
Claim 2
Dependent Claim
104 words
An infrared focal plane module for interfacing a plurality of detector elements to external electronics comprising: a plurality of integrated circuits disposed in substantially overlapping registry to form a module body, each of said integrated circuits comprising a layer of semi-conductive material disposed upon a major surface of an insulating substrate to form electronic circuits upon the surface of the substrate, each of said integrated circuits further comprising conductive areas formed along first and second edge portions of said substrate, said conductive areas being formed to communicate electrical signals to and from said integrated circuits; and an insulating layer disposed between adjacent integrated circuits.
Claim 3
Dependent Claim
15 words
The module as recited in claim 1 wherein said insulating substrate comprises a sapphire wafer.
Claim 4
Dependent Claim
20 words
The module as recited in claim 1 wherein said integrated circuits are each formed to have a plurality of channels.
Claim 5
Dependent Claim
21 words
The module as recited in claim 1 further comprising a plurality of detector elements in electrical communication with said conductive areas.
Claim 6
Dependent Claim
23 words
The module as recited in claim 1 further including a header interface in electrical communication with said conductive areas and the external electronics.
Claim 7
Dependent Claim
22 words
The module as recited in claim 1 wherein said integrated circuits comprise circuits for receiving output signals from said detector array segment.
Claim 8
Dependent Claim
15 words
The module as recited in claim 4 wherein said integrated circuits further comprise buffer circuitry.
Claim 9
Dependent Claim
18 words
The module as recited in claim 1 wherein said layer of semi-conductive material comprises a layer of silicon.
Claim 10
Dependent Claim
16 words
The module as recited in claim 1 wherein each of said integrated circuits are substantially identical.
Claim 11
Dependent Claim
17 words
The module as recited in claim 1 wherein said integrated circuit is less than 0.020 inches thick.
Claim 12
Dependent Claim
18 words
The module as recited in claim 1 wherein each integrated circuit is between 0.004 to 0.010 inches thick.
Claim 13
Dependent Claim
94 words
An infrared focal plane module fo interfacing a plurality of detector elements to external electronics comprising: a plurality of integrated circuits disposed in substantially overlapping registry to form a module body, each of said integrated circuits comprising a layer of silicon epitaxially disposed upon a major surface of a sapphire wafer, each of said integrated circuits further comprising conductive areas formed along first and second edge portions of the wafer, said conductive areas being formed to communicate electrical signals to and from said integrated circuits; and an insulating layer disposed between adjacent integrated circuits.
Claim 14
Dependent Claim
94 words
An infrared focal plane module fo interfacing a plurality of detector elements to external electronics comprising: a plurality of integrated circuits disposed in substantially overlapping registry to form a module body, each of said integrated circuits comprising a layer of silicon epitaxially disposed upon a major surface of a sapphire wafer, each of said integrated circuits further comprising conductive areas formed along first and second edge portions of the wafer, said conductive areas being formed to communicate electrical signals to and from said integrated circuits; and an insulating layer disposed between adjacent integrated circuits.
Claim 15
Dependent Claim
115 words
A process for forming an infrared detection module comprising: forming a pattern of semi-conductive material on the surface of a sapphire wafer to produce an integrated circuit; forming exposed conductive areas on first and second edge portions of the integrated circuits; stacking the integrated circuits in substantially overlapping registry; disposing a layer of insulating material between adjacent integrated circuits; disposing a plurality of infrared detector elements transverse to the plane of said integrated circuits, said detector elements being in electrical communication with said integrated circuit first edge portions; and disposing a header interface transverse to the plane of said integrated circuits, said header interface being in electrical communication with said integrated circuit second edge portions.
Claim 16
Dependent Claim
115 words
A process for forming an infrared detection module comprising: forming a pattern of semi-conductive material on the surface of a sapphire wafer to produce an integrated circuit; forming exposed conductive areas on first and second edge portions of the integrated circuits; stacking the integrated circuits in substantially overlapping registry; disposing a layer of insulating material between adjacent integrated circuits; disposing a plurality of infrared detector elements transverse to the plane of said integrated circuits, said detector elements being in electrical communication with said integrated circuit first edge portions; and disposing a header interface transverse to the plane of said integrated circuits, said header interface being in electrical communication with said integrated circuit second edge portions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-10-26 | 1991-04-27 | 1991-10-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-10-26 | 1995-04-27 | 1995-10-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-10-26 | 1999-04-27 | 1999-10-27 | $7700.00 | Window Closed / Lapsed |