Method of producing semiconductor memory device

Claim 1

A method of producing a semiconductor memory device, comprising: forming a first mask on a substrate and forming an opening in said first mask; implanting impurity ions into said substrate through the opening in said first mask to form an impurity region; forming a side wall layer having a predetermined width on a side surface of the opening in said first mask; forming a tunnel region having a width determined by said predetermined width on said impurity region by using said side wall layer as a second mask; and forming a gate dielectric layer surrounding said tunnel region and subsequently forming thereon a gate electrode covering said tunnel region and extending over said gate dielectric layer.

Claim 2

A method of producing a semiconductor memory device, comprising: forming a first mask on a substrate and forming an opening in said first mask; implanting impurity ions into said substrate through the opening in said first mask to form an impurity region; forming a side wall layer having a predetermined width on a side surface of the opening in said first mask; forming a tunnel region having a width determined by said predetermined width on said impurity region by using said side wall layer as a second mask; and forming a gate dielectric layer surrounding said tunnel region and subsequently forming thereon a gate electrode covering said tunnel region and extending over said gate dielectric layer.

Claim 8

A method of producing a semiconductor memory device comprising the steps of: forming on a semiconductor substrate a tunnel dielectric layer having such a thickness that electrons can pass through the tunnel dielectric layer; forming a polysilicon layer on said tunnel dielectric layer; forming on said polysilicon layer a mask layer for blocking impurity ions; forming an opening in said mask layer; implanting impurity ions into said silicon substrate through said polysilicon layer and said tunnel dielectric layer from the opening in said mask layer so as to form an impurity region which is aligned to the opening in said mask layer; forming an oxidation-resistant layer on said mask layer including an inside of the opening in said mask layer; subjecting said oxidation-resistant layer to an etching process in a direction perpendicular to the substrate surface to etch and remove said oxidation-resistant layer so that an etching residue of said oxidation-resistant layer remains on a side surface of the opening in said mask layer with a predetermined width; patterning the remaining oxidation-resistant layer into a predetermined length so as to obtain an oxidation-resistant layer pattern; removing said mask layer; patterning said polysilicon layer by using said oxidation-resistant layer pattern as a mask so as to obtain a polysilicon layer pattern; forming a gate oxide layer having a thickness greater than the thickness of said tunnel dielectric layer on an exposed surface of said silicon substrate and a side surface of said polysilicon layer pattern by performing a selective oxidation process by using said oxidation-resistant layer pattern as a mask; removing said oxidation-resistant layer pattern; and forming a gate electrode which makes contact with a surface of said polysilicon layer pattern on said gate oxide layer including the surface of said polysilicon layer pattern.

Claim 9

A method of producing a semiconductor memory device comprising the steps of: forming on a semiconductor substrate a tunnel dielectric layer having such a thickness that electrons can pass through the tunnel dielectric layer; forming a polysilicon layer on said tunnel dielectric layer; forming on said polysilicon layer a mask layer for blocking impurity ions; forming an opening in said mask layer; implanting impurity ions into said silicon substrate through said polysilicon layer and said tunnel dielectric layer from the opening in said mask layer so as to form an impurity region which is aligned to the opening in said mask layer; forming an oxidation-resistant layer on said mask layer including an inside of the opening in said mask layer; subjecting said oxidation-resistant layer to an etching process in a direction perpendicular to the substrate surface to etch and remove said oxidation-resistant layer so that an etching residue of said oxidation-resistant layer remains on a side surface of the opening in said mask layer with a predetermined width; patterning the remaining oxidation-resistant layer into a predetermined length so as to obtain an oxidation-resistant layer pattern; removing said mask layer; patterning said polysilicon layer by using said oxidation-resistant layer pattern as a mask so as to obtain a polysilicon layer pattern; forming a gate oxide layer having a thickness greater than the thickness of said tunnel dielectric layer on an exposed surface of said silicon substrate and a side surface of said polysilicon layer pattern by performing a selective oxidation process by using said oxidation-resistant layer pattern as a mask; removing said oxidation-resistant layer pattern; and forming a gate electrode which makes contact with a surface of said polysilicon layer pattern on said gate oxide layer including the surface of said polysilicon layer pattern.

Claim 10

A method of producing a semiconductor memory device, comprising: forming a first spacer layer on a substrate; forming a first mask on said first spacer layer and forming an opening in said first mask; implanting impurity ions into said substrate through said first spacer layer from the opening in said first mask to form an impurity region; forming in said first spacer layer an opening corresponding to the opening in said first mask; removing said first mask; forming a side wall layer having a predetermined width on a side surface of the opening in said first spacer layer; forming a tunnel region having a width determined by said predetermined width on said impurity region by using said side wall layer as a second mask; and forming a gate part on said tunnel region.

Claim 11

A method of producing a semiconductor memory device, comprising: forming a first spacer layer on a substrate; forming a first mask on said first spacer layer and forming an opening in said first mask; implanting impurity ions into said substrate through said first spacer layer from the opening in said first mask to form an impurity region; forming in said first spacer layer an opening corresponding to the opening in said first mask; removing said first mask; forming a side wall layer having a predetermined width on a side surface of the opening in said first spacer layer; forming a tunnel region having a width determined by said predetermined width on said impurity region by using said side wall layer as a second mask; and forming a gate part on said tunnel region.

Claim 12

A method of producing a semiconductor memory device, comprising: forming a first mask on a substrate and forming an opening in said first mask; implanting impurity ions into said substrate through the opening in said first mask to form an impurity region; forming a side wall layer having a predetermined width on a side surface of the opening in said first mask, forming an oxidation-resistant layer on said first mask which has the opening, and subjecting said oxidation-resistant layer to an etching process in a direction perpendicular to the substrate surface to etch and remove said oxidation-resistant layer leaving an etching residue of said oxidation-resistant layer on the side surface of the opening in said first mask with said predetermined width to form said side wall layer; forming a tunnel region having a width determined by said predetermined width by using said side wall layer as a second mask; and forming a gate on said tunnel region.

Claim 13

A method of producing a semiconductor memory device, comprising: forming a first mask on a substrate and forming an opening in said first mask; implanting impurity ions into said substrate through the opening in said first mask to form an impurity region; forming a side wall layer having a predetermined width on a side surface of the opening in said first mask, forming an oxidation-resistant layer on said first mask which has the opening, and subjecting said oxidation-resistant layer to an etching process in a direction perpendicular to the substrate surface to etch and remove said oxidation-resistant layer leaving an etching residue of said oxidation-resistant layer on the side surface of the opening in said first mask with said predetermined width to form said side wall layer; forming a tunnel region having a width determined by said predetermined width by using said side wall layer as a second mask; and forming a gate on said tunnel region.

Claim 14

A method of producing a semiconductor memory device, comprising: forming a first mask directly on a substrate and forming an opening in said first mask; implanting impurity ions into said substrate through the opening in said first mask to form an impurity region; forming a side wall layer having a predetermined width on a side surface of the opening in said first mask, forming an oxidation-resistant layer on said first mask which has the opening, and subjecting said oxidation-resistant layer to an etching process in a direction perpendicular to the substrate surface to etch and remove said oxidation-resistant layer leaving an etching residue of said oxidation-resistant layer on the side surface of the opening in said first mask with said predetermined width to form said side wall layer.

Claim 15

A method of producing a semiconductor memory device, comprising: forming a first mask directly on a substrate and forming an opening in said first mask; implanting impurity ions into said substrate through the opening in said first mask to form an impurity region; forming a side wall layer having a predetermined width on a side surface of the opening in said first mask, forming an oxidation-resistant layer on said first mask which has the opening, and subjecting said oxidation-resistant layer to an etching process in a direction perpendicular to the substrate surface to etch and remove said oxidation-resistant layer leaving an etching residue of said oxidation-resistant layer on the side surface of the opening in said first mask with said predetermined width to form said side wall layer.

Claim 16

A method of producing a semiconductor memory device, comprising: forming a first spacer layer on a substrate; forming a first mask on said first spacer layer and forming an opening in said first mask; implanting impurity ions into said substrate through said first spacer layer from the opening in said first mask to form an impurity region; forming in said first spacer layer an opening corresponding to the opening in said first mask; removing said first mask; forming a side wall layer having a predetermined width on a side surface of the opening in said first spacer layer, forming an oxidation-resistant layer on said first spacer layer which has the opening, and subjecting said oxidation-resistant layer to an etching process in a direction perpendicular to the substrate surface to etch and remove said oxidation-resistant layer leaving an etching residue of said oxidation-resistant layer on the side surface of the opening in said first spacer layer with said predetermined width to form said side wall layer; forming a tunnel region having a width determined by said predetermined width by using said side wall layer as a second mask, forming a gate dielectric layer on said substrate by using the remaining oxidation-resistant layer as said second mask, removing said second mask, and forming a first dielectric layer on a part of said substrate which is exposed by the removal of said second mask; and forming a gate on said tunnel region, by forming a first conductor layer on said gate dielectric layer, forming a second dielectric layer on said first conductor layer, and forming a second conductor layer on said second dielectric layer.

Claim 17

A method of producing a semiconductor memory device, comprising: forming a first spacer layer on a substrate; forming a first mask on said first spacer layer and forming an opening in said first mask; implanting impurity ions into said substrate through said first spacer layer from the opening in said first mask to form an impurity region; forming in said first spacer layer an opening corresponding to the opening in said first mask; removing said first mask; forming a side wall layer having a predetermined width on a side surface of the opening in said first spacer layer, forming an oxidation-resistant layer on said first spacer layer which has the opening, and subjecting said oxidation-resistant layer to an etching process in a direction perpendicular to the substrate surface to etch and remove said oxidation-resistant layer leaving an etching residue of said oxidation-resistant layer on the side surface of the opening in said first spacer layer with said predetermined width to form said side wall layer; forming a tunnel region having a width determined by said predetermined width by using said side wall layer as a second mask, forming a gate dielectric layer on said substrate by using the remaining oxidation-resistant layer as said second mask, removing said second mask, and forming a first dielectric layer on a part of said substrate which is exposed by the removal of said second mask; and forming a gate on said tunnel region, by forming a first conductor layer on said gate dielectric layer, forming a second dielectric layer on said first conductor layer, and forming a second conductor layer on said second dielectric layer.