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US4698658A
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Amorphous semiconductor device
Assignee: Sharp Corp
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Filing: 1985-07-19
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Granted: 1987-10-06
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Expires: 2005-07-19
Abstract
Abstract An amorphous semiconductor device comprising a layered structure having a p-amorphous silicon layer, an i-amorphous silicon layer, an n-amorphous silicon layer, an i-amorphous silicon layer and a p-amorphous silicon layer, or an n-amorphous silicon layer, an i-amorphous silicon layer, a p-amorphous silicon layer, an i-amorphous silicon layer and an n-amorphous silicon layer, in sequence, on a substrate, electrodes being disposed on the top layer, the central layer and the bottom layer, respectively.
Inventors
- 👤 Hitoshi Sannomiya
- 👤 Masaya Hijikigawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:10
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/24
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
132 words
An amorphous semiconductor device for a color sensor comprising: the following sequentially layered structure on a substrate: a first doped amorphous silicon layer of a first conductivity, a first intrinsic amorphous silicon layer, a second doped amorphous silicon layer of a second conductivity type opposite said first conductivity type, a second intrinsic amorphous silicon layer, a third doped amorphous silicon layer of said first conductivity type; first, second and third electrodes connected respectively to said first, second and third doped amorphous silicon layers; a first photo diode formed by said first and second doped amorphous silicon layers between said first and second electrodes having a different sensitivity to wavelengths of light than a second photo diode formed by said second and third doped amorphous silicon layers between said second and third electrode.
Claim 2
Dependent Claim
132 words
An amorphous semiconductor device for a color sensor comprising: the following sequentially layered structure on a substrate: a first doped amorphous silicon layer of a first conductivity, a first intrinsic amorphous silicon layer, a second doped amorphous silicon layer of a second conductivity type opposite said first conductivity type, a second intrinsic amorphous silicon layer, a third doped amorphous silicon layer of said first conductivity type; first, second and third electrodes connected respectively to said first, second and third doped amorphous silicon layers; a first photo diode formed by said first and second doped amorphous silicon layers between said first and second electrodes having a different sensitivity to wavelengths of light than a second photo diode formed by said second and third doped amorphous silicon layers between said second and third electrode.
Claim 3
Dependent Claim
28 words
An amorphous semiconductor device according to claim 1, wherein said second doped amorphous silicon layer is composed of two layered parts which sandwich a transparent conductive layer therebetween.
Claim 4
Dependent Claim
34 words
An amorphous semiconductor device according to claim 1, wherein said substrate is a light-permeable substrate, and said second doped amorphous silicon layer is composed of two layered parts which sandwich said light-permeable substrate therebetween.
Claim 5
Dependent Claim
167 words
A color sensor comprising: the following sequentially layered structure on a substrate: a first doped amorphous silicon layer of a first conductivity, a first intrinsic amorphous silicon layer, a second doped amorphous silicon layer of a second conductivity type opposite said first conductivity type, a second intrinsic amorphous silicon layer, a third doped amorphous silicon layer of said first conductivity type; first, second and third electrodes connected respectively to said first, second and third doped amorphous silicon layers; a first photo diode formed by said first and second doped amorphous silicon layers between said first and second electrodes having a different sensitivity to wavelengths of light than a second photo diode formed by said second and third doped amorphous silicon layers between said second and third electrode; and a signal processing circuit connected to said first, second and third electrodes for receiving an output from said first and second photo diodes representing a first-order function of the wavelength of the incident light ray on said photo diodes.
Claim 6
Dependent Claim
167 words
A color sensor comprising: the following sequentially layered structure on a substrate: a first doped amorphous silicon layer of a first conductivity, a first intrinsic amorphous silicon layer, a second doped amorphous silicon layer of a second conductivity type opposite said first conductivity type, a second intrinsic amorphous silicon layer, a third doped amorphous silicon layer of said first conductivity type; first, second and third electrodes connected respectively to said first, second and third doped amorphous silicon layers; a first photo diode formed by said first and second doped amorphous silicon layers between said first and second electrodes having a different sensitivity to wavelengths of light than a second photo diode formed by said second and third doped amorphous silicon layers between said second and third electrode; and a signal processing circuit connected to said first, second and third electrodes for receiving an output from said first and second photo diodes representing a first-order function of the wavelength of the incident light ray on said photo diodes.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1990-10-05 | 1991-04-06 | 1991-10-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-10-05 | 1995-04-06 | 1995-10-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-10-05 | 1999-04-06 | 1999-10-06 | $7700.00 | Window Closed / Lapsed |