Dynamic type semiconductor memory device

Claim 2

A dynamic type semiconductor memory device comprising: a semiconductor substrate of a first conductivity type having a charge associated therewith; a well region of a second conductivity type formed in the surface area of said semiconductor substrate; charge pumping means for selectively varying the charge in said semiconductor substrate so as to reverse-bias said semiconductor substrate with respect to said well region; a plurality of word lines; a plurality of memory cells each including a MOS transistor and a capacitor, said MOS transistor of each of said cells being of a first conductivity type which has a gate electrode connected to one of said word lines and a current path formed in the surface area of said well region, with said capacitor of each of said cells storing data corresponding to a voltage supplied through the current path of said MOS transistor of the cell; and driving means for selecting one of said word lines and for applying the charge in said semiconductor substrate to the selected word line to turn on each MOS transistor connected to the selected word line.

Claim 3

A dynamic type semiconductor memory device according to claim 1, wherein said driving means includes a decoding circuit for decoding an address signal, and a connecting circuit for selectively connecting one of said word lines to said semiconductor substrate under control of said decoding circuit.

Claim 4

A dynamic type semiconductor memory device according to claim 2, wherein said decoding circuit includes an enable section for generating an enable signal in response to the address signal of a specific value, and said connecting circuit includes a switching section connected between a predetermined one of said word lines and said substrate for turning on a corresponding one of said MOS transistors in response to the enable signal.

Claim 5

A dynamic type semiconductor memory device according to claim 3, wherein said switching section is connected to said enable section via said predetermined word line to receive the enable signal.

Claim 6

A dynamic type semiconductor memory device according to claim 4, wherein said switching section includes a second MOS transistor of the second conductivity type having a current path connected between said predetermined word line and said semiconductor substrate.

Claim 7

A dynamic type semiconductor memory device comprising: a semiconductor substrate of a first conductivity type having a charge associated therewith; a well region of a second conductivity type formed in the surface area of said semiconductor substrate; charge pumping means for selectively varying the charge in said semiconductor substrate so as to reverse-bias said semiconductor substrate with respect to said well region; a plurality of word lines; a plurality of memory cells each including a MOS transistor and a capacitor, said MOS transistor of each of said cells being of a first conductivity type which has a gate electrode connected to one of said word lines and a current path formed in the surface area of said well region, with said capacitor of each of said cells storing data corresponding to a voltage supplied through the current path of said MOS transistor of the cell; and driving means for selecting one of said word lines and for applying the charge in said semiconductor substrate to the selected word line to turn on each MOS transistor connected to the selected word line, said driving means including a decoding circuit for decoding an address signal and a connecting circuit for selectively connecting one of said word lines to said semiconductor substrate under control of said decoding circuit, said decoding circuit including an enable section for generating an enable signal in response to the address signal of a specific value, and said connecting circuit including a switching section connected between a predetermined one of said word lines and said substrate for turning on a corresponding one of said MOS transistors in response to the enable signal, said switching section being connected to said enable section via said predetermined word line to receive the enable signal, said switching section including a second MOS transistor of the second conductively type having a current path connected between said predetermined word line and said semiconductor substrate, wherein said driving means includes first and second voltage generators for generating respective first and second voltages, and said enable section includes a third MOS transistor of the first conductivity type having a current path connected between an output terminal of said first voltage generator and said predetermined word line for selectively supplying the first voltage as said enable signal, and said switching section includes fourth and fifth MOS transistors of the first and second conductivity types having gates connected to said predetermined word line and current paths connected in series between an output terminal of said second voltage generator and said semiconductor substrate, for supplying a turn on voltage to a gate electrode of said second MOS transistor in response to the first voltage.

Claim 8

A dynamic type semiconductor memory device comprising: a semiconductor substrate of a first conductivity type having a charge associated therewith; a well region of a second conductivity type formed in the surface area of said semiconductor substrate; charge pumping means for selectively varying the charge in said semiconductor substrate so as to reverse-bias said semiconductor substrate with respect to said well region; a plurality of word lines; a plurality of memory cells each including a MOS transistor and a capacitor, said MOS transistor of each of said cells being of a first conductivity type which has a gate electrode connected to one of said word lines and a current path formed in the surface area of said well region, with said capacitor of each of said cells storing data corresponding to a voltage supplied through the current path of said MOS transistor of the cell; and driving means for selecting one of said word lines and for applying the charge in said semiconductor substrate to the selected word line to turn on each MOS transistor connected to the selected word line, said driving means including a decoding circuit for decoding an address signal and a connecting circuit for selectively connecting one of said word lines to said semiconductor substrate under control of said decoding circuit, said decoding circuit including an enable section for generating an enable signal in response to the address signal of a specific value, and said connecting circuit including a switching section connected between a predetermined one of said word lines and said substrate for turning on a corresponding one of said MOS transistors in response to the enable signal, said switching section being connected to said enable section via said predetermined word line to receive the enable signal, said switching section including a second MOS transistor of the second conductively type having a current path connected between said predetermined word line and said semiconductor substrate, wherein said driving means includes first and second voltage generators for generating respective first and second voltages, and said enable section includes a third MOS transistor of the first conductivity type having a current path connected between an output terminal of said first voltage generator and said predetermined word line for selectively supplying the first voltage as said enable signal, and said switching section includes fourth and fifth MOS transistors of the first and second conductivity types having gates connected to said predetermined word line and current paths connected in series between an output terminal of said second voltage generator and said semiconductor substrate, for supplying a turn on voltage to a gate electrode of said second MOS transistor in response to the first voltage.

Claim 9

A dynamic type semiconductor memory device according to claim 6, wherein said first voltage generator has an input terminal for receiving a write control signal to generate the first voltage during the period in which the write control signal is supplied, and said second voltage generator has an input terminal for receiving the write control signal to generated the second voltage for a predetermined time period upon receipt of the write control signal.

Claim 10

A dynamic type semiconductor memory device according to claim 7, wherein said first and second MOS transistors are respectively of p-channel and n-channel types.

Claim 11

A dynamic type semiconductor memory device according to claim 8, wherein said driving means has a first power terminal set at a potential of a first level and a second power terminal set at a potential of a second level lower than the first level, said well region is connected to said first power terminal, and said charge pumping means includes a charge pump circuit connected between said semiconductor substrate and said second power terminal for setting the potential of said semiconductor substrate at a third level lower than said second level.

Claim 12

A dynamic type semiconductor memory device according to claim 9, wherein said charge pump circuit includes sixth and seventh MOS transistors of n-channel type having current paths connected in series between said semiconductor substrate and said second power terminal, and gates respectively connected to their drains, a pulse oscillator for periodically generating a pulse, and a second capacitor connected between an output terminal of said pulse oscillator and the junction of said sixth and seventh MOS transistors to be charged and discharged respectively through the current paths of said sixth and seventh MOS transistors in response to the rising and falling of each pulse from said pulse oscillator.

Claim 13

A dynamic type semiconductor memory device according to claim 10, wherein said first voltage generator is connected to generate the first voltage of said second level, said second voltage generator is connected to generate the second voltage of said first level, said fourth MOS transistor is a p-channel MOS transistor whose current path is connected between the output terminal of said second voltage generator and the gate electrode of said second MOS transistor, and said fifth MOS transistor is an n-channel MOS transistor whose current path is connected between the gate electrode of said second MOS transistor and said semiconductor substrate.

Claim 14

A dynamic type semiconductor memory device according to claim 11, wherein the first capacitor of each memory cell is connected in series with the current path of the associated first MOS transistor to receive a voltage of one of said first and second levels as data.

Claim 15

A dynamic type semiconductor memory device according to claim 7 wherein said first and second MOS transistors are respectively of n-channel and p-channel types.

Claim 16

A dynamic type semiconductor memory device according to claim 13, wherein said driving means has a first power terminal set at a potential of a first level and a second power terminal set at a potential of a second level higher than the first level, said well region is connected to a first power terminal, and said charge pumping means includes a charge pump circuit connected between said semiconductor substrate and a second power terminal for setting the potential of said semiconductor substrate at a third level higher than said second level.