US4696094A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process of manufactoring an indium antimonide photodiode
Assignee: Thales SA
•
Filing: 1984-11-30
•
Granted: 1987-09-29
•
Expires: 2004-11-30
Abstract
Abstract A method for forming indium antimonide photodiodes by ionic implantation of the S 34 + isotope of sulphur on a p type indium antimonide substrate. These photodiodes may be readily coupled to an N channel charge transfer device which provides multiplexing of the photodiodes and readout of the charges.
Inventors
- 👤 Henry Yves
- 👤 Andre Nicollet
- 👤 Michel Villard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:07
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/854; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2215; H10F71/00; H10F71/127; H10P30/202; H10P30/206; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
56 words
A method for manufacturing an indium antimonide photodiode having an ionic implantation of the S 34 + isotope of sulphur on a P type indium antimonide substrate which comprises providing an ionic implantation consisting essentially of the S 34 + isotope of sulphur on a P type indium antimonide substrate then in heating the implanted substrate.
Claim 2
Independent Claim
56 words
A method for manufacturing an indium antimonide photodiode having an ionic implantation of the S 34 + isotope of sulphur on a P type indium antimonide substrate which comprises providing an ionic implantation consisting essentially of the S 34 + isotope of sulphur on a P type indium antimonide substrate then in heating the implanted substrate.
Claim 3
Dependent Claim
106 words
The method as claimed in claim 1, wherein: doping of the P type indium antimonide substrate with p type impurities is of the order of 10 15 to 10 16 atoms per cubic centimeter; the implantation of S 34 + ions takes place with an energy of the order of 100 to 200 KeV, at a temperature of the order of 20° to 150° C. and the implantation dose is of the order of 5×10 13 to 10 15 atoms per square centimeter; heating takes place under encapsulation at a temperature between 350° to 400° C. and for a period of about 35 to 50 minutes.
Claim 4
Dependent Claim
65 words
The method as claimed in claim 1, wherein: implantation and heating of the substrate are effected; the surface reserved for each photodiode is defined by depositing and patterning a mask layer and etching the exposed substrate thus forming a mesa structure; a dielectric layer is deposited over the whole surface; windows are opened in the dielectric layer to said substrate and electric contacts are deposited.
Claim 5
Dependent Claim
76 words
The method as claimed in claim 1, wherein: the surface reserved for each photodiode is defined by depositing and patterning a mask layer, thus forming a planar structure; said implantation and said heating of the substrate are effected, the zones to be implanted being defined by photosensitive resin or a dielectric material; a dielectric layer is deposited over the whole surface; windows are opened in the dielectric layer to said substrate and electric contracts are deposited.
Claim 6
Dependent Claim
65 words
The method as claimed in claim 2, wherein: the said implantation and said heating of the substrate are effected; the surface reserved for each photodiode is defined by fabricating a mask and etching the exposed substrate thus forming a mesa structure; a dielectric layer is deposited over the whole surface; windows are opened in the dielectric layer to said substrate and electric contracts are deposited.
Claim 7
Dependent Claim
76 words
The method as claimed in claim 2, wherein: the surface reserved for each photodiode is defined by depositing and patterning a mask layer, thus forming a planar structure; said implantation and said heating of the substrate are effected, the zones to be implanted being defined by photosensitive resin or a dielectric material; a dielectric layer is deposited over the whole surface; windows are opened in the dielectric layer to said substrate and electric contacts are deposited.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-09-28 | 1991-03-30 | 1991-09-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-09-28 | 1995-03-30 | 1995-09-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-09-28 | 1999-03-30 | 1999-09-29 | $7700.00 | Window Closed / Lapsed |