US4286277A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Planar indium antimonide diode array and method of manufacture
Assignee: United States Department of the Army
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Filing: 1977-11-22
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Granted: 1981-08-25
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Expires: 1997-11-22
Abstract
Abstract An improved diode array and method of manufacture is provided by the diffon of cadmium from an indium-cadmium alloy through a silicon diode mask into bulk indium-antimonide to form a planar structure.
Inventors
- 👤 Randolph E. Longshore
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 08:42
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/124; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2215; H10F71/00; H10F71/127; H10P; H10P32/00; H10P32/10; H10P32/12; H10P32/17; H10P50/00; H10P50/20; H10P52/00; H10P95/00; H10P95/70; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
153 words
A photodiode comprising: a wafer of n-type indium antimonide doped with telluride having a carrier concentration of 2×10 15 and a mobility between 1.5 and 2 times 10 5 ; said wafer having a planar surface; isolated pockets of p-type material imbedded in said wafer having exposed contact surface areas coplanar with said planar surface; a layer of silicon oxide covering said planar surface and contact surface except for a small percentage of said contact surface; and a separate electrode at each pocket covering and contacting said small percentage of contact surface and at least a continuous narrow strip of said silicon oxide surrounding said small percentage of contact surface, wherein each electrode comprises: a thin layer of a noble metal covering only said small percentage of contact surface area, a layer of chromium covering said noble metal and some of the surrounding silicon oxide, and a layer of gold covering said chromium.
Claim 2
Dependent Claim
153 words
A photodiode comprising: a wafer of n-type indium antimonide doped with telluride having a carrier concentration of 2×10 15 and a mobility between 1.5 and 2 times 10 5 ; said wafer having a planar surface; isolated pockets of p-type material imbedded in said wafer having exposed contact surface areas coplanar with said planar surface; a layer of silicon oxide covering said planar surface and contact surface except for a small percentage of said contact surface; and a separate electrode at each pocket covering and contacting said small percentage of contact surface and at least a continuous narrow strip of said silicon oxide surrounding said small percentage of contact surface, wherein each electrode comprises: a thin layer of a noble metal covering only said small percentage of contact surface area, a layer of chromium covering said noble metal and some of the surrounding silicon oxide, and a layer of gold covering said chromium.
Claim 3
Dependent Claim
12 words
A photodiode according to claim 1 wherein: said noble metal is palladium.
Claim 4
Dependent Claim
12 words
A photodiode according to claim 2 wherein: said nobel metal is platinum.
Claim 5
Dependent Claim
28 words
A photodiode according to claim 1 wherein: said coplanar surface of both said wafer and said pockets is anodized except for said small percentage of said contact area.
Claim 6
Dependent Claim
15 words
A photodiode according to claim 1 wherein: said layer of noble is 100 A thick.
Claim 7
Dependent Claim
22 words
A photodiode according to claim 5 wherein: said layers of chromium and gold have thicknesses of 100-200 A and 2000-3000 A respectively.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-08-24 | 1985-02-23 | 1985-08-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-08-24 | 1989-02-23 | 1989-08-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-08-24 | 1993-02-23 | 1993-08-25 | $7700.00 | Window Closed / Lapsed |