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Dielectric for electroluminescent devices, and methods for making

Assignee: GIMMEL GERALD K PERSONAL REPRESENTATIVE OF ESTATE OF JOSEPH LINDMAYER
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Filing: 1985-12-27
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Granted: 1987-09-15
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Expires: 2005-12-27
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Abstract

Abstract Disclosed are electroluminescent devices employing a stabilized tantalum sub-oxide as a dielectric. The tantalum sub-oxide is a non-stoichiometric oxide of the general form Ta 2 O m , where 4.5<m<5.0, stabilized by bonds with suitable anions such as OH. In a disclosed method, a layer of tantalum sub-oxide is deposited to a thickness of from 3000 to 4000 angstroms. More particularly, a source mixture of tantalum metal and tantalum pentoxide is provided, vaporized by electron beam evaporation, and allowed to condense on a surface. The layer of tantalum sub-oxide is exposed to anions for completing a stable oxide network. Preferably, the anions are OH radicals, and the bonds are formed by exposing the layer to a humid atmosphere. The thus-stabilized layer is reheated to remove any water.

Inventors

  • 👤 Joseph Lindmayer

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 23:11
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/58; C23C14/5806; C03; C03C; C03C17/00; C03C17/34; C03C17/3411; C03C17/3417; C23C14/06; C23C14/08; C23C14/083; C23C14/5846; H; H05; H05B; H05B33/00; H05B33/10; H05B33/12; C03C2217/00; C03C2217/90; C03C2217/94; C03C2217/948

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 81 words
A method of forming a dielectric layer in a electroluminescent device of the type including an electroluminescent layer sandwiched between a pair of electrodes and separated from the electrodes by respective dielectric layers, said method comprising: vapor depositing a layer of tantalum sub-oxide of the form Ta 2 O m , where 4.5 <m <5.0; and exposing the layer of tantalum sub-oxide to OH radicals for completing a stable oxide network of the form Ta 2 O m OH 5-m .
Claim 2
Independent Claim 81 words
A method of forming a dielectric layer in a electroluminescent device of the type including an electroluminescent layer sandwiched between a pair of electrodes and separated from the electrodes by respective dielectric layers, said method comprising: vapor depositing a layer of tantalum sub-oxide of the form Ta 2 O m , where 4.5 <m <5.0; and exposing the layer of tantalum sub-oxide to OH radicals for completing a stable oxide network of the form Ta 2 O m OH 5-m .
Claim 3
Dependent Claim 27 words
A method in accordance with claim 1, wherein the layer of tantalum sub-oxide is deposited to a thickness in the range of from 1000 to 6000 angstroms.
Claim 4
Independent Claim 107 words
A method of forming a dielectric layer in an electroluminescent device of the type including an electroluminescent layer sandwiched between a pair of electrodes and separated from the electrodes by respective dielectric layers, said method comprising: vapor depositing a layer of tantalum sub-oxide of the form Ta 2 O m , where 4.5 <m <5.0; exposing the layer of tantalum sub-oxide to an atmosphere including H 2 O vapor such that OH bonds are formed to complete a stable oxide network of the form Ta 2 O m .(OH) 5-m ; and reheating the layer of tantalum sub-oxide to remove any H 2 O from the oxide.
Claim 5
Independent Claim 107 words
A method of forming a dielectric layer in an electroluminescent device of the type including an electroluminescent layer sandwiched between a pair of electrodes and separated from the electrodes by respective dielectric layers, said method comprising: vapor depositing a layer of tantalum sub-oxide of the form Ta 2 O m , where 4.5 <m <5.0; exposing the layer of tantalum sub-oxide to an atmosphere including H 2 O vapor such that OH bonds are formed to complete a stable oxide network of the form Ta 2 O m .(OH) 5-m ; and reheating the layer of tantalum sub-oxide to remove any H 2 O from the oxide.
Claim 6
Dependent Claim 27 words
A method in accordance with claim 3, wherein the layer of tantalum sub-oxide is deposited to a thickness in the range of from 1000 to 6000 angstroms.
Claim 7
Independent Claim 137 words
A method of forming a dielectric layer in an electroluminescent device of the type including an electroluminescent layer sandwiched between a pair of electrodes and separated from the electrodes by respective dielectric layers, said method comprising: providing a source mixture of tantalum metal and tantalum pentoxide; vaporizing the source mixture; allowing the vapors to condense on a surface which is to receive the dielectric layer, thereby forming thereon a layer of tantalum sub-oxide of the form Ta 2 O m , where 4.5 <m <5.0; exposing the layer of tantalum sub-oxide to an atmosphere including H 2 O vapor such that OH bonds are formed to complete a stable oxide network of the form Ta 2 O m .(OH) 5-m ; and reheating the layer of tantalum sub-oxide to remove any H 2 O from the oxide.
Claim 8
Independent Claim 137 words
A method of forming a dielectric layer in an electroluminescent device of the type including an electroluminescent layer sandwiched between a pair of electrodes and separated from the electrodes by respective dielectric layers, said method comprising: providing a source mixture of tantalum metal and tantalum pentoxide; vaporizing the source mixture; allowing the vapors to condense on a surface which is to receive the dielectric layer, thereby forming thereon a layer of tantalum sub-oxide of the form Ta 2 O m , where 4.5 <m <5.0; exposing the layer of tantalum sub-oxide to an atmosphere including H 2 O vapor such that OH bonds are formed to complete a stable oxide network of the form Ta 2 O m .(OH) 5-m ; and reheating the layer of tantalum sub-oxide to remove any H 2 O from the oxide.
Claim 9
Dependent Claim 18 words
A method in accordance with claim 5, wherein the surface is a surface of one of the electrodes.
Claim 10
Dependent Claim 17 words
A method in accordance with claim 5, wherein the surface is a surface of the electroluminescent layer.

References Cited (Backward Citations)

US3522071A Cited
US3927224A Cited
US4201798A Cited
US4263339A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-09-14 1991-03-16 1991-09-15 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-09-14 1995-03-16 1995-09-15 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-09-14 1999-03-16 1999-09-15 $7700.00 Window Closed / Lapsed

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