Charge transfer type solid-state imaging device

Claim 2

A charge transfer type solid-state imaging device comprising: a plurality of photoelectric conversion elements arranged in line and row directions on the surface of a semiconductor substrate, said photoelectric conversion elements being adapted to store signal charges corresponding to the quantities of incidence light; first charge transfer means arranged alongside respective rows of said photoelectric conversion elements and for successively picking up and transferring signal charges stored in said photoelectric conversion elements, each of said first charge transfer means having a plurality of electrode pairs which form regions of different potentials in said semiconductor substrate; means for supplying pulse signals in a predetermined sequence to said electrodes of said first charge transfer means, thereby causing said signal charges to be transferred; and second charge transfer means for receiving in a parallel manner the plurality of rows of signal charges transferred by said first charge transfer means and for transferring the thus received signal charges in sequence to the output terminal; wherein each of said first charge transfer means includes at least two pairs of electrodes arranged within the pitch of said photoelectric conversion elements in the row direction, each of said first charge transfer means has an impurity region provided under one of the electrodes of each pair, such as to form a potential differential, and said electrodes of each pair are electrically connected to each other.

Claim 3

A charge transfer type solid-state imaging device according to claim 1, wherein said electrodes of each pair are electrically connected to each other through an Al conductor.

Claim 4

A charge transfer type solid-state imaging device according to claim 1, wherein said electrodes of each pair are electrically connected to each other by one of said electrodes of each pair.

Claim 5

A charge transfer type solid-state imaging device according to claim 1, wherein wiring for delivering the pulse signals from said pulse supplying means to respective electrode pairs of said first charge transfer means is laid parallel to the lines between adjacent lines of said photoelectric electric conversion elements and is connected to one of the electrodes of the electrode pair.

Claim 6

A charge transfer type solid-state imaging device according to claim 1, wherein wiring for delivering the pulse signals from said pulse supplying means to respective electrode pairs of said first charge transfer means is laid on said first charge transfer means parallel to the rows.

Claim 7

A charge transfer type solid-state imaging device according to claim 1, wherein first wiring for delivering the pulse signals from the pulse supplying means to respective electrode pairs of said first charge transfer means is laid parallel to the rows on predetermined first charge transfer means and connected to predetermined electrode pairs, and the supply of the pulse signals to the first charge transfer means on which no wiring is provided is conducted through second wiring which leads from said first wiring in the direction of lines of said photoelectric conversion elements.

Claim 8

A charge transfer type of solid-state imaging device according to claim 1, wherein said first charge transfer means can transfer the signal charges stored in all photoelectric conversion elements.

Claim 9

A charge transfer type solid-state imaging device according to claim 7, wherein said first charge transfer means is also capable of transferring the smear charge.

Claim 10

A charge transfer type solid-state imaging device according to claim 8, further comprising a means provided in the output terminal for removing the smear charge from the signal charges.

Claim 11

A charge transfer type solid-state imaging device according to claim 9, comprising two or more of said second transfer means.

Claim 12

A charge transfer type solid-state imaging device according to claim 10, wherein said two or more second charge transfer means have different channel widths.

Claim 13

A charge transfer type solid-state imaging device according to claim 8, wherein said first charge transfer means include a plurality of groups of electrode pairs constituted by first, second, third and fourth electrode pairs, the first, second and third electrode pairs carrying, respectively, the signal charge from an odd-number line, signal charge from an even-number line and a smear charge, while said fourth electrode pair is left vacant, wherein the charges are transferred sequentially and cyclically such that the charge in said third electrode pair is transferred to the vacant fourth electrode pair and the charge in the second electrode pair is transferred to the third electrode pair which is now vacant, followed by the transfer of the charge in said first electrode pair to the second electrode pair which is now vacant.

Claim 14

A charge transfer type solid-state imaging device according to claim 8, wherein said second charge transfer means include a plurality of groups of electrode pairs constituted by first, second, third and fourth electrode pairs, the first, second and third electrode pairs carrying, respectively, the signal charge from an odd-number line, signal charge from an even-number line and a smear charge, while said fourth electrode pair is left vacant, wherein the charges are transferred sequentially and cyclically such that the charge in said third electrode pair is transferred to the vacant fourth electrode pair and the charge in the second electrode pair is transferred to the third electrode pair which is now vacant, followed by the transfer of the charge in said first electrode pair to the second electrode pair which is now vacant.

Claim 15

A charge transfer type solid-state imaging device comprising: a plurality of photoelectric conversion elements arranged in line and row directions on the surface of a semiconductor substrate, said photoelectric conversion elements being adapted to store signal charges corresponding to the quantities of incidence light; first charge transfer means arranged alongside respective rows of said photoelectric conversion elements and for successively picking up and transferring signal charges stored in said photoelectric conversion elements, each of said first charge transfer means having a plurality of electrode pairs which form regions of different potentials in said semiconductor substrate; means for supplying pulse signals in a predetermined sequence to said electrodes of said first charge transfer means, thereby causing said signal charges to be transferred; and second charge transfer means for receiving in a parallel manner the plurality of rows of signal charges transferred by said first charge transfer means and for transferring the thus received signal charges in sequence to the output terminal; wherein each of said first charge transfer means includes at least two pairs of electrodes arranged within the pitch of said photoelectric conversion elements in the row direction, wherein wiring for delivering the pulse signals from said pulse supplying means to respective electrode pairs of said first charge transfer means is laid on said first charge transfer means parallel to the rows.

Claim 16

A charge transfer type solid-state imaging device comprising: a plurality of photoelectric conversion elements arranged in line and row directions on the surface of a semiconductor substrate, said photoelectric conversion elements being adapted to store signal charges corresponding to the quantities of incidence light; first charge transfer means arranged alongside respective rows of said photoelectric conversion elements and for successively picking up and transferring signal charges stored in said photoelectric conversion elements, each of said first charge transfer means having a plurality of electrode pairs which form regions of different potentials in said semiconductor substrate; means for supplying pulse signals in a predetermined sequence to said electrodes of said first charge transfer means, thereby causing said signal charges to be transferred; and second charge transfer means for receiving in a parallel manner the plurality of rows of signal charges transferred by said first charge transfer means and for transferring the thus received signal charges in sequence to the output terminal; wherein each of said first charge transfer means includes at least two pairs of electrodes arranged within the pitch of said photoelectric conversion elements in the row direction, wherein wiring for delivering the pulse signals from said pulse supplying means to respective electrode pairs of said first charge transfer means is laid on said first charge transfer means parallel to the rows.

Claim 17

A charge transfer type solid-state imaging device comprising: a plurality of photoelectric conversion elements arranged in line and row directions on the surface of a semiconductor substrate, said photoelectric conversion elements being adapted to store signal charges corresponding to the quantities of incidence light; first charge transfer means arranged alongside respective rows of said photoelectric conversion elements and for successively picking up and transferring signal charges stored in said photoelectric conversion elements, each of said first charge transfer means having a plurality of electrode pairs which form regions of different potentials in said semiconductor substrate; means for supplying pulse signals in a predetermined sequence to said electrodes of said first charge transfer means, thereby causing said signal charges to be transferred; and second charge transfer means for receiving in a parallel manner the plurality of rows of signal charges transferred by said first charge transfer means and for transferring the thus received signal charges in sequence to the output terminal; wherein each of said first charge transfer means includes at least two pairs of electrodes arranged within the pitch of said photoelectric conversion elements in the row direction, wherein wiring for delivering the pulse signals from said pulse supplying means to respective electrode pairs is laid on said first charge transfer means also parallel to the rows and parallel to the lines between adjacent lines of said photoelectric conversion elements.

Claim 18

A charge transfer type solid-state imaging device comprising: a plurality of photoelectric conversion elements arranged in line and row directions on the surface of a semiconductor substrate, said photoelectric conversion elements being adapted to store signal charges corresponding to the quantities of incidence light; first charge transfer means arranged alongside respective rows of said photoelectric conversion elements and for successively picking up and transferring signal charges stored in said photoelectric conversion elements, each of said first charge transfer means having a plurality of electrode pairs which form regions of different potentials in said semiconductor substrate; means for supplying pulse signals in a predetermined sequence to said electrodes of said first charge transfer means, thereby causing said signal charges to be transferred; and second charge transfer means for receiving in a parallel manner the plurality of rows of signal charges transferred by said first charge transfer means and for transferring the thus received signal charges in sequence to the output terminal; wherein each of said first charge transfer means includes at least two pairs of electrodes arranged within the pitch of said photoelectric conversion elements in the row direction, wherein wiring for delivering the pulse signals from said pulse supplying means to respective electrode pairs is laid on said first charge transfer means also parallel to the rows and parallel to the lines between adjacent lines of said photoelectric conversion elements.