Patent US4689650A successfully refreshed from Google Patents.
US4689650A
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Infrared epitaxial detector structure and method of making same
Assignee: United States Department of the Army
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Filing: 1985-10-03
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Granted: 1987-08-25
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Expires: 2005-10-03
Abstract
Abstract Successive layers of a II-VI ternary buffer layer and a II-VI ternary nar-bandpass infrared-absorbing layer are grown by MBE on a III-V binary substrate with low surface defect density. The composition of the buffer layer is chosen to lattice match with the infrared-absorbing layer.
Inventors
- 👤 John H. Dinan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 22:27
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/222; H10F71/00; H10F71/125; H10F71/1257; H10F77/00; H10F77/10; H10F77/12; H10F77/123; H10F77/1237; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/2912; H10P14/32; H10P14/3202; H10P14/3224; H10P14/3232; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3432; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
65 words
An infrared detector structure including: a III-V binary substrate chosen from the group consisting of GaAs and In-Sb; a ternary II-VI buffer layer of a Zn x Cd 1-X Te compound atop said substrate; a II-VI narrow-bandpass ternary infrared-absorbing layer chosen from the group consisting of HgCdTe and HgZnTe atop said buffer layer, wherein said buffer layer is lattice matched to said infrared absorbing layer.
Claim 2
Dependent Claim
65 words
An infrared detector structure including: a III-V binary substrate chosen from the group consisting of GaAs and In-Sb; a ternary II-VI buffer layer of a Zn x Cd 1-X Te compound atop said substrate; a II-VI narrow-bandpass ternary infrared-absorbing layer chosen from the group consisting of HgCdTe and HgZnTe atop said buffer layer, wherein said buffer layer is lattice matched to said infrared absorbing layer.
Claim 3
Dependent Claim
29 words
The detector structure as set forth in claim 1 wherein the buffer layer is Zn 0 .045 Cd 0 .955 Te when HgCdTe is chosen as the infrared-absorbing layer.
Claim 4
Dependent Claim
29 words
The detector structure as set forth in claim 1 wherein the buffer layer is Zn 0 .2 Cd 0 .8 Te when HgZnTe is chosen as the infrared-absorbing layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-08-24 | 1991-02-23 | 1991-08-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-08-24 | 1995-02-23 | 1995-08-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-08-24 | 1999-02-23 | 1999-08-25 | $7700.00 | Window Closed / Lapsed |