US4689645A
Expired / Lapsed
US
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Current control device
Assignee: Energy Conversion Devices Inc
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Filing: 1986-04-17
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Granted: 1987-08-25
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Expires: 2006-04-17
Abstract
Abstract An amorphous semiconductor body, preferably a silicon-containing vapor deposited film, is provided containing at least fluorine as a compensating or altering and also an alloying agent, and most preferably at least one complementary compensating or altering agent, which reduce the localized defect states in the energy gap of the amorphous semiconductor material to a degree which either one alone could not achieve. As a result, the amorphous semiconductor body provides a higher photoconductivity, wider depletion width, more efficient charge carrier collection, longer carrier lifetime, and lower dark intrinsic electrical conductivity, where desired, and can be more easily modified to shift the Fermi level to provide very efficient n type extrinsic electrical conductivity and the like than prior amorphous semiconductor bodies.
Inventors
- 👤 Stanford R. Ovshinsky
- 👤 Masatsugu Izu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 23:58
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10F; H10F71/00; H10F71/10; H10F71/103; H10P14/24; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
67 words
A photoresistive device comprising: means for providing an output signal corresponding to the intensity of incident radiation, said means including a thin semiconductor film comrpising a solid amorphous silicon or amorphous germanium host matrix having electronic configurations with energy gap; said host matrix of the amorphous semiconductor alloy material further including at least one compensating element for reducing the density of localized states in said energy gap.
Claim 2
Dependent Claim
67 words
A photoresistive device comprising: means for providing an output signal corresponding to the intensity of incident radiation, said means including a thin semiconductor film comrpising a solid amorphous silicon or amorphous germanium host matrix having electronic configurations with energy gap; said host matrix of the amorphous semiconductor alloy material further including at least one compensating element for reducing the density of localized states in said energy gap.
Claim 3
Dependent Claim
66 words
A device as in claim 1, wherein a plurality of different and complimentary compensating elements are introduced into said film, said elements selected so that at least one is adapted to reduce said localized states at or near the Fermi level and another is adapted to reduce said localized states betwen those at or near said Fermi level and either the conduction or valence bands thereof.
Claim 4
Dependent Claim
23 words
A device as in claim 2, wherein said compensating elements are chosen from the group consisting essentially of hydrogen, fluorine, and combinations thereof.
Claim 5
Dependent Claim
36 words
A device as in claim 1, wherein said thin film alloy material is undoped and adapted to generate electron-hole pairs in response to the absorption of incident radiation so as to provide for minumum dark conductivity.
Claim 6
Dependent Claim
21 words
A device as in claim 5 wherein the resistance of the undoped material varies with the intensity of light impinging thereon.
Claim 7
Dependent Claim
24 words
A device as in claim 5, further including means adapted to provide for a flow of electrical current through the thin film alloy material.
Claim 8
Dependent Claim
20 words
A device as in claim 6, wherein said means includes heavily doped regions on opposite sides of said undoped material.
Claim 9
Dependent Claim
33 words
A device as in claim 7, wherein said means includes a transparent electrically conductive electrode, electrically communicating with said thin film material and a second electrode electrically communicating with said thin film material.
Claim 10
Dependent Claim
15 words
A device as in claim 1, wherein the thin semiconductor film is a p-n diode.
Claim 11
Dependent Claim
15 words
A device as in claim 1, wherein the thin semiconductor film is a p-i-n diode.
Claim 12
Dependent Claim
17 words
A device as in claim 1, wherein the thin semiconductor film is part of a Schottky barrier.
Claim 13
Dependent Claim
15 words
A device as in claim 1, wherein the thin semiconductor film is an n-i-n structure.
Claim 14
Dependent Claim
17 words
A device as in claim 1, wherein the thin semiconductor film is a p-n-p current control device.
Claim 15
Dependent Claim
65 words
A current control device including an amorphous silicon host matrix film which has incorporated thereinto at least one density of states reducing element; said film further including at least three regions opeatively disposed such that conducting regions are of different conductivity types; and at least two spaced electrodes disposed in direct electrical communication with regions of the film which are of the same conductivity type.
Claim 16
Dependent Claim
65 words
A current control device including an amorphous silicon host matrix film which has incorporated thereinto at least one density of states reducing element; said film further including at least three regions opeatively disposed such that conducting regions are of different conductivity types; and at least two spaced electrodes disposed in direct electrical communication with regions of the film which are of the same conductivity type.
Claim 17
Dependent Claim
12 words
A device as in claim 14, wherein the device is a transistor.
Claim 18
Dependent Claim
16 words
A device as in claim 14, wherein the electrodes communicate with p-conductivity regions of the film.
Claim 19
Dependent Claim
14 words
A device as in claim 16, wherein an n-conductivity region separates the p-conductivity regions.
Claim 20
Dependent Claim
25 words
A device as in claim 14, wherein the electrodes communicate with regions of the film which are doped to be of a non-neutral conductivity type.
Claim 21
Dependent Claim
39 words
A device as in claim 14, wherein the doped regions are spacedly disposed by a region of the film which has been doped to be of a conductivity type different from the conductivity type of the electrode communicating regions.
Claim 22
Dependent Claim
19 words
A device as in claim 14, wherein a third electrode electrically communicates with the third region of the film.
Claim 23
Dependent Claim
19 words
A device as in claim 14, wherein the film includes at least a second density of states reducing element.
Claim 24
Dependent Claim
17 words
A device as in claim 21, wherein one of the density of states reducing elements is hydrogen.
Claim 25
Dependent Claim
19 words
A device as in claim 22, wherein a second one of the density of states reducing elements is fluorine.
Claim 26
Dependent Claim
18 words
A device as in claim 14, wherein hydrogen and fluorine are incorporated as density of states reducing elements.
Claim 27
Dependent Claim
14 words
A device as in claim 14, wherein the silicon host matrix further includes germanium.
Claim 28
Dependent Claim
27 words
A device as in claim 14, wherein said at least three regions are formed as adjacent to layers disposed successively and in intimate contact with one another.
Claim 29
Dependent Claim
16 words
A device as in claim 26, wherein said spaced electrodes are formed as thin film layers.
Claim 30
Dependent Claim
12 words
A device as in claim 14, wherein only two electrodes are provided.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1990-08-24 | 1991-02-23 | 1991-08-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-08-24 | 1995-02-23 | 1995-08-25 | $3760.00 | Window Closed / Lapsed |
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