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US4688267A Expired / Lapsed US ⏱️ 0.0 years remaining

Optical fibre receiver

Assignee: Alcatel Lucent NV
•
Filing: 1986-01-30
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Granted: 1987-08-18
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Expires: 2006-01-30
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Abstract

Abstract An optical receiver, for use with optical fibre or for receiving a beam in free space, has its detector device, usually a PIN diode (D) connected in series with a resistor (R1) and to the base of a gallium arsenide field effect transistor (FET). Although the latter is satisfactory at most frequencies of operation, in certain load conditions, instability can occur at Gigahertz frequencies. To overcome this, the source-drain path of the FET is shunted by 50 ohm resistor (R2) in series with a capacitor (C) of about 5 nanofarads. In addition the FET is coupled to a bipolar transistor amplifier by a relatively long wire bond (L) which acts as an inductive impedance at the frequencies at which this instability occurs. These measures between them suppress this instability.

Inventors

  • 👤 David P. M. Chown
  • 👤 Malcolm Spencer

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 08:24
CPC Classifications
H; H04; H04B; H04B10/00; H04B10/60; H04B10/66; H04B10/69; H04B10/693

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 234 words
In an optical receiver of the type employing a PIN diode which diode receives a light beam to provide a current through the diode proportional to the light intensity received with said diode in series with a resistive impedance with the junction between the diode and said resistive impedance connected to the gate electrode of a field effect transistor (FET), with the drain electrode of said FET coupled to the emitter electrode of a NPN bipolar transistor and with the source electrode coupled to a point of reference potential, with the collector electrode of said NPN transistor coupled to a point of operating potential and with the base electrode coupled to said point of reference potential via a biasing impedance network, the improvement in combination therewith of apparatus for preventing instability at frequencies of the order of 1 GHz or greater comprising: a series resistor-capacitor network connected across the drain and source electrodes of said FET with said resistor having a value which is low compared to said resistive impedance in series with said diode and wherein said capacitor has a low impedance value at frequencies of the order of 1 GHZ or higher, with said drain electrode coupled to said emitter electrode via a relatively long bond wire which serves as an inductive impedance having a high impedance compared to said capacitor impedance at frequencies of the order of 1 GHz or greater.
Claim 2
Dependent Claim 234 words
In an optical receiver of the type employing a PIN diode which diode receives a light beam to provide a current through the diode proportional to the light intensity received with said diode in series with a resistive impedance with the junction between the diode and said resistive impedance connected to the gate electrode of a field effect transistor (FET), with the drain electrode of said FET coupled to the emitter electrode of a NPN bipolar transistor and with the source electrode coupled to a point of reference potential, with the collector electrode of said NPN transistor coupled to a point of operating potential and with the base electrode coupled to said point of reference potential via a biasing impedance network, the improvement in combination therewith of apparatus for preventing instability at frequencies of the order of 1 GHz or greater comprising: a series resistor-capacitor network connected across the drain and source electrodes of said FET with said resistor having a value which is low compared to said resistive impedance in series with said diode and wherein said capacitor has a low impedance value at frequencies of the order of 1 GHZ or higher, with said drain electrode coupled to said emitter electrode via a relatively long bond wire which serves as an inductive impedance having a high impedance compared to said capacitor impedance at frequencies of the order of 1 GHz or greater.
Claim 3
Dependent Claim 27 words
The optical receiver combination according to claim 1 wherein said resistor in series with said capacitor is about 50 ohms, with said capacitor being about 5 picofarads.
Claim 4
Dependent Claim 16 words
The optical receiver combination according to claim 1 wherein said FET is a gallium arsenide device.

References Cited (Backward Citations)

US3449683A Cited
US3541234A Cited
US4189682A Cited
US4496908A Cited
US4420724A Cited
US4620321A Cited
US4591803A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-08-17 1991-02-16 1991-08-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-08-17 1995-02-16 1995-08-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-08-17 1999-02-16 1999-08-18 $7700.00 Window Closed / Lapsed

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