US4688073A
Expired / Lapsed
US
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Lateral device structures using self-aligned fabrication techniques
Assignee: International Business Machines Corp
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Filing: 1986-03-19
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Granted: 1987-08-18
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Expires: 2006-03-19
Abstract
Abstract Submicron lateral device structures, such as bipolar transistors, Schottky Barrier diodes and resistors, are made using self-aligned fabrication techniques and conventional photolithography. The devices are made using individual submicron silicon protrusions which extend outwardly from and are integral with a silicon pedestal therefor. Both PNP and NPN transistors may be made by diffusing approximate dopant materials into opposing vertical walls of a protrusion so as to form the emitter and collector regions. The protrusions themselves are formed by anisotropically etching the silicon using submicron insulating studs as a mask. The studs are formed using sidewall technology where a vertical sidewall section of a layer of insulating material is residual to a reactive ion etching process employed to remove the layer of insulating material.
Inventors
- 👤 George R. Goth
- 👤 Shashi D. Malaviya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:35
CPC Classifications
C; C08; C08G; C08G12/00; C08G12/02; C08G12/26; C08G12/34; C08G12/40; H; H10; H10D; H10D1/00; H10D1/40; H10D1/43; H10D10/00; H10D10/60; H10D8/00; H10D8/60; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/693; H10P50/695; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/10; H10W10/13; H10W20/00; H10W20/01; H10W20/031; H10W20/063; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
102 words
An integrated semiconductor body including semiconductor device structures comprising a narrow submicron-wide protrusion of semiconductor material integral with and extending outward from a semiconductor pedestal therefor with said narrow protrusion having opposing planar vertical surfaces and a top horizontal surface, said vertical surfaces being fully covered with an insulative material except for selected localized regions thereof, said localized regions having a surface area substantially smaller than that of said vertical surfaces, said horizontal surface being covered by an insulator stud of substantially the same width as that of said protrusion and said protrusion having electrical contacts made to said selected localized regions.
Claim 2
Dependent Claim
102 words
An integrated semiconductor body including semiconductor device structures comprising a narrow submicron-wide protrusion of semiconductor material integral with and extending outward from a semiconductor pedestal therefor with said narrow protrusion having opposing planar vertical surfaces and a top horizontal surface, said vertical surfaces being fully covered with an insulative material except for selected localized regions thereof, said localized regions having a surface area substantially smaller than that of said vertical surfaces, said horizontal surface being covered by an insulator stud of substantially the same width as that of said protrusion and said protrusion having electrical contacts made to said selected localized regions.
Claim 3
Dependent Claim
21 words
The semiconductor device structure as set forth in claim 1 wherein said narrow protrusion has a width less than 0.5 μm.
Claim 4
Dependent Claim
49 words
The semiconductor device structure as set forth in claim 1 wherein said electrical contacts are made to said opposing vertical surfaces overlying narrow regions of a conductivity opposite to that of the said semiconductor material of said protrusion between said narrow regions to thereby form a lateral transistor device.
Claim 5
Dependent Claim
17 words
The integrated semiconductor body as set forth in claim 3 having a plurality of said narrow protrusions.
Claim 6
Dependent Claim
23 words
The integrated semiconductor body as set forth in claim 4 wherein said plurality of protrusions include both PNP and NPN lateral transistor devices.
Claim 7
Dependent Claim
19 words
The integrated semiconductor body as set forth in claim 5 wherein said plurality of narrow protrusions include resistor devices.
Claim 8
Dependent Claim
21 words
The integrated semiconductor body as set forth in claim 6 wherein said plurality of narrow protrusions include Schottky Barrier diode devices.
Claim 9
Dependent Claim
18 words
The integrated semiconductor body as set forth in claim 7 wherein said semiconductor material is N-type epitaxial silicon.
Claim 10
Dependent Claim
36 words
The integrated semiconductor body as set forth in claim 8 wherein the said narrow protrusions comprising said Schottky Barrier diode devices and said lateral PNP devices each include a region therebeneath of N + -type conductivity.
Claim 11
Dependent Claim
39 words
The integrated semiconductor body as set forth in claim 9 wherein the anodes of said Schottky Barrier diode devices comprise respective ones of said narrow protrusions and the cathodes comprise respective ones of said N + -type conductivity regions.
Claim 12
Dependent Claim
43 words
The integrated semiconductor body as set forth in claim 10 wherein electrical connection is made to the said semiconductor material of said protrusion between said narrow regions by electrical contact to said protrusion at vertical sidewalls of said protrusion outside said narrow regions.
Claim 13
Dependent Claim
154 words
An integrated semiconductor body including semiconductor device structures comprising a plurality of narrow protrusions of semiconductor material integral with and extending outwardly from semiconductor pedestals therefor, said protrusions each including a PNP or NPN lateral transistor, said protrusions each having a common width less than about 0.5 μm, said protrusions having opposing planar vertical surfaces and a top horizontal surface, said vertical surfaces being covered fully with an insulative material except for selected localized regions thereof, said localized regions having a surface area substantially smaller than that of said vertical surfaces, said horizontal surface being covered by an insulator stud of substantially the same width as that of said protrusions, said protrusions having electrical contacts to made to said localized regions, said opposing vertical surfaces overlying narrow regions of a conductivity type opposite to that of said semiconductor material of said protrusion between said narrow regions to form said lateral PNP or NPN device.
Claim 14
Dependent Claim
154 words
An integrated semiconductor body including semiconductor device structures comprising a plurality of narrow protrusions of semiconductor material integral with and extending outwardly from semiconductor pedestals therefor, said protrusions each including a PNP or NPN lateral transistor, said protrusions each having a common width less than about 0.5 μm, said protrusions having opposing planar vertical surfaces and a top horizontal surface, said vertical surfaces being covered fully with an insulative material except for selected localized regions thereof, said localized regions having a surface area substantially smaller than that of said vertical surfaces, said horizontal surface being covered by an insulator stud of substantially the same width as that of said protrusions, said protrusions having electrical contacts to made to said localized regions, said opposing vertical surfaces overlying narrow regions of a conductivity type opposite to that of said semiconductor material of said protrusion between said narrow regions to form said lateral PNP or NPN device.
Claim 15
Dependent Claim
23 words
The integrated semiconductor body as set forth in claim 12 further comprising an oxide isolation recessed within said pedestals and surrounding said protrusions.
Claim 16
Dependent Claim
98 words
An integrated semiconductor body including semiconductor device structures comprising a plurality of narrow protrusions of semiconductor material integral with and extending outwardly from semiconductor pedestals therefor, said protrusions including both PNP and NPN lateral transistors, said protrusions each having a width less than 0.5 μm, said protrusions surrounded by oxide isolation recessed within said pedestals and having electrical contacts to opposing vertical surfaces of said protrusions, said opposing vertical surfaces overlying narrow regions of a conductivity opposite to that of said semiconductor material of said protrusion between said narrow regions to form said lateral PNP and NPN devices.
Claim 17
Dependent Claim
98 words
An integrated semiconductor body including semiconductor device structures comprising a plurality of narrow protrusions of semiconductor material integral with and extending outwardly from semiconductor pedestals therefor, said protrusions including both PNP and NPN lateral transistors, said protrusions each having a width less than 0.5 μm, said protrusions surrounded by oxide isolation recessed within said pedestals and having electrical contacts to opposing vertical surfaces of said protrusions, said opposing vertical surfaces overlying narrow regions of a conductivity opposite to that of said semiconductor material of said protrusion between said narrow regions to form said lateral PNP and NPN devices.
Claim 18
Dependent Claim
19 words
The integrated semiconductor body as set forth in claim 14 wherein said plurality of narrow protrusions include resistor devices.
Claim 19
Dependent Claim
21 words
The integrated semiconductor body as set forth in claim 15 wherein said plurality of narrow protrusions include Schottky Barrier diode devices.
Claim 20
Dependent Claim
18 words
The integrated semiconductor body as set forth in claim 16 wherein said semiconductor material is N-type epitaxial silicon.
Claim 21
Dependent Claim
36 words
The integrated semiconductor body as set forth in claim 17 wherein the said narrow protrusions comprising said Schottky Barrier diode devices and said lateral PNP devices each include a region therebeneath of N + -type conductivity.
Claim 22
Dependent Claim
39 words
The integrated semiconductor body as set forth in claim 18 wherein the anodes of said Schottky Barrier diode devices comprise respective ones of said narrow protrusions and the cathodes comprise respective ones of said N + -type conductiviy regions.
Claim 23
Dependent Claim
43 words
The integrated semiconductor body as set forth in claim 19 wherein electrical connection is made to the said semiconductor material of said protrusion between said narrow regions by electrical contact to said protrusion at vertical sidewalls of said protrustion outside said narrow regions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1990-08-17 | 1991-02-16 | 1991-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-08-17 | 1995-02-16 | 1995-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-08-17 | 1999-02-16 | 1999-08-18 | $7700.00 | Window Closed / Lapsed |