US4687724A
Expired / Lapsed
US
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Photoreceptor for electrophotography comprising boron doped a-Si1-x Nx :H:F
Assignee: Sharp Corp
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Filing: 1983-12-14
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Granted: 1987-08-18
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Expires: 2003-12-14
Abstract
Abstract A photoreceptor for electrophotography utilizing a-Si:N:H:F, wherein a stable high-sensitive layer is provided and the time-lapse variation in characteristics is reduced in the use of an a-Si 1-x N x layer as a sensitive layer.
Inventors
- 👤 Shaw Ehara
- 👤 Yoshimi Kojima
- 👤 Eiji Imada
- 👤 Takashi Hayakawa
- 👤 Toshiro Matsuyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:07
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08221
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
58 words
A photoreceptor for electrophotography comprising a substrate of conductor and a single layer of amorphous silicon film formed on the substrate, said amorphous silicon of said film being composed of a-Si 1-x N x containing nitrogen and boron doped to said a-Si 1-x N x , in which the silicon dangling bonds are terminated with hydrogen and fluorine.
Claim 2
Dependent Claim
58 words
A photoreceptor for electrophotography comprising a substrate of conductor and a single layer of amorphous silicon film formed on the substrate, said amorphous silicon of said film being composed of a-Si 1-x N x containing nitrogen and boron doped to said a-Si 1-x N x , in which the silicon dangling bonds are terminated with hydrogen and fluorine.
Claim 3
Dependent Claim
61 words
The photoreceptor for electrophotography as defined in claim 1, wherein said nitrogen is added due to decomposition of ammonia gas by the flow of NH 3 /[SiH 4 +SiF 4 ] at the rate of 5 through 30%, and boron is fed with diborane by the flow of B 2 H 6 at the concentration of 500 ppm through 10,000 ppm.
Claim 4
Independent Claim
97 words
A method for producing a photoreceptor for electrophotography of amorphous silicon film-formed on a conductor, said amorphous silicon being composed of a-Si 1-x N x containing nitrogen and boron, the improvement thereof comprising the steps of adding said nitrogen into said a-Si 1-x N x due to decomposition of ammonia gas into which the flow of NH 3 /[SiH 4 +SiF 4 ] has been flowed at the rate of 5 through 30%, and feeding said boron with diborane to which B 2 H 6 has been flowed at the concentration of 500 ppm through 10,000 ppm.
Claim 5
Independent Claim
97 words
A method for producing a photoreceptor for electrophotography of amorphous silicon film-formed on a conductor, said amorphous silicon being composed of a-Si 1-x N x containing nitrogen and boron, the improvement thereof comprising the steps of adding said nitrogen into said a-Si 1-x N x due to decomposition of ammonia gas into which the flow of NH 3 /[SiH 4 +SiF 4 ] has been flowed at the rate of 5 through 30%, and feeding said boron with diborane to which B 2 H 6 has been flowed at the concentration of 500 ppm through 10,000 ppm.
Claim 6
Dependent Claim
55 words
A photoreceptor for electrophotography comprising a conductive substrate and a single layer of amorphous silicon film disposed thereon, said amorphous silicon film being comprised of a-Si 1-x H x containing nitrogen and boron doped to said a-Si 1-x N x and wherein at least a portion of the silicon dangling bonds are terminated with fluorine.
Claim 7
Dependent Claim
55 words
A photoreceptor for electrophotography comprising a conductive substrate and a single layer of amorphous silicon film disposed thereon, said amorphous silicon film being comprised of a-Si 1-x H x containing nitrogen and boron doped to said a-Si 1-x N x and wherein at least a portion of the silicon dangling bonds are terminated with fluorine.
Claim 8
Dependent Claim
57 words
A photoreceptor for electrophotography comprising a conductive substrate and a single layer of amorphous silicon film disposed thereon, said film being comprised of a boron doped a-Si 1-x N x :H:F wherein said nitrogen is bonded with silicon, hydrogen and fluorine to form an amorphous network and said fluorine is bonded only with the silicon dangling bonds.
Claim 9
Dependent Claim
57 words
A photoreceptor for electrophotography comprising a conductive substrate and a single layer of amorphous silicon film disposed thereon, said film being comprised of a boron doped a-Si 1-x N x :H:F wherein said nitrogen is bonded with silicon, hydrogen and fluorine to form an amorphous network and said fluorine is bonded only with the silicon dangling bonds.
Claim 10
Independent Claim
75 words
A method for producing a single layer photoreceptor of a boron doped a-Si 1-x N x :H:F comprising introducing NH 3 , SiF 4 , SiH 4 and B 2 H 6 gases into a reaction chamber containing a conductive substrate said gases being flowed at rates to satisfy the relationships of: (a) NH 3 /[SiH 4 +SiF 4 ]=5 to 30%; and (b) the flow of B 2 H 6 =500 to 10,000 ppm.
Claim 11
Independent Claim
75 words
A method for producing a single layer photoreceptor of a boron doped a-Si 1-x N x :H:F comprising introducing NH 3 , SiF 4 , SiH 4 and B 2 H 6 gases into a reaction chamber containing a conductive substrate said gases being flowed at rates to satisfy the relationships of: (a) NH 3 /[SiH 4 +SiF 4 ]=5 to 30%; and (b) the flow of B 2 H 6 =500 to 10,000 ppm.
Claim 12
Dependent Claim
37 words
A method according to claim 6, wherein the ratio of SiH 4 :SiF 4 =9:1, said relationship NH 3 /[SiH 4 +SiF 4 ]=15% and B 2 H 6 is flowed at a rate of 3,000 ppm.
Claim 13
Dependent Claim
38 words
A method according to claim 6, wherein said gases are introduced into said reaction chamber and glow discharged under the conditions of 13.56 MHz in RF frequency, 200 W in output power and 0.1 Torr in gas pressure.
Claim 14
Dependent Claim
14 words
A method according to claim 6, wherein the total gas flow is 200 sccm.
Claim 15
Dependent Claim
29 words
A method according to claim 6, wherein prior to introduction of said gases, said substrate is heated in said reaction chamber to a temperature of 250° to 300° C.
Claim 16
Dependent Claim
18 words
A method according to claim 6, wherein the ratio of SiH 4 :SiF 4 is 2.33:1 to 19:1.
Claim 17
Independent Claim
91 words
A method for producing a single layer photoreceptor of a boron doped a-Si 1-x N x H:F comprising introducing NH 3 , SiF 4 , SiH 4 and B 2 H 6 gases into a reaction chamber containing a conductive substrate said gases being flowed at rates to satisfy the relationships of: (a) SiH 4 :SiF 4 =2.33:1 to 19:1; (b) NH 3 /[SiH 4 +SiF 4 ]=5 to 30%; (c) The flow of B 2 H 6 =500 to 10,000 ppm; and (d) The total gas flow is 200 sccm.
Claim 18
Independent Claim
91 words
A method for producing a single layer photoreceptor of a boron doped a-Si 1-x N x H:F comprising introducing NH 3 , SiF 4 , SiH 4 and B 2 H 6 gases into a reaction chamber containing a conductive substrate said gases being flowed at rates to satisfy the relationships of: (a) SiH 4 :SiF 4 =2.33:1 to 19:1; (b) NH 3 /[SiH 4 +SiF 4 ]=5 to 30%; (c) The flow of B 2 H 6 =500 to 10,000 ppm; and (d) The total gas flow is 200 sccm.
Claim 19
Dependent Claim
55 words
A method according to claim 12, wherein the ratio of SiH 4 :SiF 4 =9:1, said relationship NH 3 /[SiH 4 +SiF 4 ]=15%, said B 2 H 6 is flowed at a rate of 3,000 ppm, and said gases are introduced into said reaction chamber and glow discharged conditions sufficient to cause a plasma.
Claim 20
Dependent Claim
35 words
A method according to claim 13, wherein said glow discharge conditions are such that the RF frequency is 13.56 MH 2 , the output power is 200 W and the gas pressure is 0.1 Torr.
Claim 21
Dependent Claim
16 words
The photoreceptor according to claim 1 having a dark resistivity of at least 10 13 Ωcm.
Claim 22
Dependent Claim
45 words
A photoreceptor produced by the process according to claim 6 having a dark resistivity of 2×10 13 Ωcm and a photo (or bright) resistivity of 5×10 9 Ωcm, said photoresistivity being measured under irradiation of 610 nm light of intensity of 10 μW/cm 2 .
Claim 23
Dependent Claim
20 words
A photoreceptor produced by the process according to claim 7 having a dark resistivity of at least 10 13 Ωcm.
Claim 24
Dependent Claim
55 words
A phtoreceptor produced by the process according to claim 7 having a dark resistivity of 2×10 13 Ωcm and a photo (or bright) resistivity of 5×10 9 Ωcm and a photo (or bright) resistivity of 5×10 9 Ωcm, said photoresistivity being measured under irradiation of 610 nm light of intensity of 10 μw/cm 2 .
Claim 25
Dependent Claim
20 words
A photoreceptor produced by the process according to claim 12 having a dark resistivity of at least 2×10 13 Ωcm.
Claim 26
Dependent Claim
45 words
A photoreceptor produced by the process according to claim 12 having a dark resistivity of 2×10 13 Ω/cm and a photo (or bright) resistivity of 5×10 9 Ωcm, said photoresistivity being measured under irradiation of 610 nm light of intensity of 10 μW/cm 2 .
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1990-08-17 | 1991-02-16 | 1991-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-08-17 | 1995-02-16 | 1995-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-08-17 | 1999-02-16 | 1999-08-18 | $7700.00 | Window Closed / Lapsed |