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US4687723A
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Electrophotographic photoconductor having a photosensitive layer of amorphous silicon carbonitride
Assignee: Ricoh Co Ltd
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Filing: 1985-12-17
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Granted: 1987-08-18
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Expires: 2005-12-17
Abstract
Abstract An electrophotographic photoconductor is disclosed, which comprises a support material, an intermediate layer, a photosensitive layer and a surface protection layer for protecting the photosensitive layer, which are successively overlaid on the support material, and the photosensitive layer comprises an amorphous silicon carbon nitride containing at least hydrogen or halogen having the formula of a-Si:C:N(H.X), where X represents halogen, or an amorphous silicon carbon nitride of the formula of a-Si:C:N:O(H.X) (where X represents halogen) which contains at least hydrogen or halogen.
Inventors
- 👤 Kohichi Ohshima
- 👤 Yoshiyuki Kageyama
- 👤 Yukio Ide
- 👤 Itaru Fujimura
- 👤 Masako Kunita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:46
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/043; G03G5/0433; G03G5/082; G03G5/08214; G03G5/08221; G03G5/14; G03G5/142; G03G5/144; G03G5/147; G03G5/14704
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
146 words
An electrophotographic photoconductor comprising a support material, an intermediate layer formed on said support material, a photosensitive layer formed on said intermediate layer, and a surface protection layer formed on said photosensitive layer for protecting the surface of said photosensitive layer and for reducing the reflection by said photosensitive layer of the light incident thereon, said photosensitive layer comprising an amorphous silicon carbon nitride selected from the group consisting of an amorphous silicon carbon nitride containing at least one hydrogen or halogen having the formula of a-Si:C:N(H.X), where X represents halogen, and an amorphous silicon carbon nitride of the formula of a-Si:C:N:O(H.X), where X represents halogen, which contains at least hydrogen or halogen, and said intermediate layer comprising a material selected from the group consisting of a-Si:N:H, a-Si:N:O:H, a-Si:C:O:H, a-Si:C:N:O:H, B:N:H, B:N:O:H, B:C:N:H, a-Si:n:X, a-Si:N:O:X, a-Si:C:O:X, a-Si:C:X, a-Si:C:N:O:X, B:N:X, B:N:O:X and B:C:N:X, where X is halogen.
Claim 2
Dependent Claim
146 words
An electrophotographic photoconductor comprising a support material, an intermediate layer formed on said support material, a photosensitive layer formed on said intermediate layer, and a surface protection layer formed on said photosensitive layer for protecting the surface of said photosensitive layer and for reducing the reflection by said photosensitive layer of the light incident thereon, said photosensitive layer comprising an amorphous silicon carbon nitride selected from the group consisting of an amorphous silicon carbon nitride containing at least one hydrogen or halogen having the formula of a-Si:C:N(H.X), where X represents halogen, and an amorphous silicon carbon nitride of the formula of a-Si:C:N:O(H.X), where X represents halogen, which contains at least hydrogen or halogen, and said intermediate layer comprising a material selected from the group consisting of a-Si:N:H, a-Si:N:O:H, a-Si:C:O:H, a-Si:C:N:O:H, B:N:H, B:N:O:H, B:C:N:H, a-Si:n:X, a-Si:N:O:X, a-Si:C:O:X, a-Si:C:X, a-Si:C:N:O:X, B:N:X, B:N:O:X and B:C:N:X, where X is halogen.
Claim 3
Dependent Claim
46 words
An electrophotographic photoconductor as claimed in claim 1, wherein said amorphous silicon carbon nitride is doped with at least one element selected from the group of B, Al, Ga, In, Tl, P, As, Sb, and Bi in an amount ranging from 10 ppm to 10,000 ppm.
Claim 4
Dependent Claim
18 words
An electrophotographic photoconductor as claimed in claim 1, wherein said intermediate layer is formed from a-Si:N:O:H or a-Si:C:O:H.
Claim 5
Dependent Claim
16 words
An electrophotographic photoconductor as claimed in claim 1, wherein said intermediate layer comprises an n-type semiconductor.
Claim 6
Dependent Claim
16 words
An electrophotographic photoconductor as claimed in claim 1, wherein said intermediate layer comprises a p-type semiconductor.
Claim 7
Dependent Claim
20 words
An electrophotographic photoconductor as claimed in claim 4, wherein said intermediate layer comprises a material having the formula of a-Si:H:(P).
Claim 8
Dependent Claim
20 words
An electrophotographic photoconductor as claimed in claim 5, wherein said intermediate layer comprises a material having the formula of a-Si:H:(B).
Claim 9
Dependent Claim
35 words
An electrophotographic photoconductor as claimed in claim 1, wherein said surface protection layer has an index of refraction between the index of refraction of the air and the index of refraction of said photosensitive layer.
Claim 10
Dependent Claim
23 words
An electrophotographic photoconductor as claimed in claim 1, wherein said surface protection layer has an index of refraction ranging from 1.44 to 2.30.
Claim 11
Dependent Claim
63 words
An electrophotographic photoconductor as claimed in claim 1, wherein said surface protection layer is made of a material selected from the group consisting of aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), silicon oxide (SiO 2 ), tin oxide (SnO 2 ), magnesium fluoride (MgF 2 ), tantalum oxide (Ta 2 O 3 ) and mixtures of said materials.
Claim 12
Dependent Claim
45 words
An electrophotographic photoconductor as claimed in claim 1, wherein said surface protection layer is made of a material selected from the group consisting of a-Si:N:H, a-Si:N:0:H, a-Si:C:0:H, a-Si:C:H, a-Si:C:N:0:H, B:N:H, B:N:0:H, B:C:N:H, a-Si:N:X, a-Si:N:0:X, a-Si:C:0:X, a-Si:C:X, a-Si:C:N:0:X, B:N:X, B:N:0:X and B:C:N:X, where X is halogen.
Claim 13
Dependent Claim
41 words
An electrophotographic photoconductor as claimed in claim 1, wherein said amorphous silicon carbon nitride has the formula of a-Si x C y N z O l (H.X) where, when x+y+z+l =1, 0.6≦x≦0.99, 0.005≦y≦0.3, 0.005≦z≦0.3 and 0≦l≦0.3 in terms of atomic ratio.
Claim 14
Dependent Claim
26 words
An electrophotographic photoconductor as claimed in claim 1, wherein the thickness of said intermediate layer is in the range of from 0.01 μm to 1.0 μm.
Claim 15
Dependent Claim
26 words
An electrophotographic photoconductor as claimed in claim 4, wherein the thickness of said intermediate layer is in the range of from 0.02 μm to 0.5 μm.
Claim 16
Dependent Claim
26 words
An electrophotographic photoconductor as claimed in claim 5, wherein the thickness of said intermediate layer is in the range of from 0.02 μm to 0.5 μm.
Claim 17
Dependent Claim
25 words
An electrophotographic photoconductor as claimed in claim 1, wherein the thickness of said photosensitive layer is in the range of from 5μm to 100 μm.
Claim 18
Dependent Claim
27 words
An electrophotographic photoconductor as claimed in claim 1, wherein the thickness of said surface protection layer is in the range of from 0.02 μm to 1.0 μm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-08-17 | 1991-02-16 | 1991-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-08-17 | 1995-02-16 | 1995-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-08-17 | 1999-02-16 | 1999-08-18 | $7700.00 | Window Closed / Lapsed |