US4687537A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Epitaxial metal silicide layers
Assignee: Intersil Corp
•
Filing: 1986-04-15
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Granted: 1987-08-18
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Expires: 2006-04-15
Abstract
Abstract A process of forming an epitaxial metal silicide layer on a silicon substrate is disclosed. A thin layer of a first metal that will form an oxide in preference to silicon is initially deposited on the substrate. A preferred first metal is titanium. A layer of palladium, platinum or iridium is deposited thereover. An exceptionally uniform, conductive layer of metal silicide is thereby formed by epitaxial growth without the necessity of a high temperature anneal. The disclosed process is particularly useful in forming ultra thin metal silicide Schottky barriers in devices such as infrared imaging arrays.
Inventors
- 👤 Dorothy M. Hoffman
- 👤 Frederick J. Tams, III
- 👤 Joseph T. McGinn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-10 02:04
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/012; H10D64/0121; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/227; Y; Y10; Y10S; Y10S117/00; Y10S117/905
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
87 words
A process of forming a layer of a metal silicide on the surface of a silicon substrate comprising depositing at a temperature of from about 200° to 325° C. a first metal which will form an oxide in preference to silicon, said metal being selected from the group consisting of titanium, vanadium, zirconium, tantalum, chromium and hafnium, and depositing thereover a layer of a second metal selected from the group consisting of palladium and platinum whereby the silicide of the second metal is formed by epitaxial growth.
Claim 2
Dependent Claim
87 words
A process of forming a layer of a metal silicide on the surface of a silicon substrate comprising depositing at a temperature of from about 200° to 325° C. a first metal which will form an oxide in preference to silicon, said metal being selected from the group consisting of titanium, vanadium, zirconium, tantalum, chromium and hafnium, and depositing thereover a layer of a second metal selected from the group consisting of palladium and platinum whereby the silicide of the second metal is formed by epitaxial growth.
Claim 3
Dependent Claim
13 words
A process in accordance with claim 1, wherein the first metal is titanium.
Claim 4
Dependent Claim
13 words
A process in accordance with claim 2, wherein the second metal is palladium.
Claim 5
Dependent Claim
29 words
A process in accordance with claim 1, wherein the first metal is deposited to a density of from about 6×10 14 to about 6×10 15 atoms per square centimeter.
Claim 6
Dependent Claim
24 words
A process in accordance with claim 4, wherein the first metal is deposited to a density of about 1.8×10 15 atoms per square centimeter.
Claim 7
Dependent Claim
23 words
A process in accordance with claim 1, wherein the layer of epitaxial metal silicide is from about one to about ten nanometers thick.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-08-17 | 1991-02-16 | 1991-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-08-17 | 1995-02-16 | 1995-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-08-17 | 1999-02-16 | 1999-08-18 | $7700.00 | Window Closed / Lapsed |