Semiconductor element and method for producing the same

Claim 1

Integrated bipolar power transistor arrangement including a plurality of parallel connected bipolar partial power transistors comprising: an epitaxial layer provided on a semiconductor substrate and forming contact connected collector regions for said partial power transistors, a buried layer region for said collector regions provided at the interface between said semiconductor substrate and said epitaxial layer; deep diffused collector contact regions projecting downward from the surface facing away from the substrate of the epitaxial layer into the buried layer, the contact connected collector region having an upper surface and being bounded by the buried layer and the collector contact regions; further comprising a common base region formed in the upper surface of the collector region including an inner contact-connected base region and an annular base region disposed around and concentrically with the inner base region, an annular emitter region disposed in said base region inside and concentrically with said annular base region, an annular barrier region formed in said base region inside said annular emitter region separating said inner base region and said annular base region, said barrier region extending downward partially into the base region, and annular barrier base-pinch resistance being formed by a space between the lower surface of said annular barrier region and the boundary between the collector region and the base region, said annular barrier resistance forming a connection between the inner contact-connected base zone and the annular base region.