Etching method employing positive photoresist film

Claim 2

An etching method suitable for a semiconductor device manufacturing process comprising the steps of: (a) dipping a material layer to be etched formed over a semiconductor substrate in an organic solvent; (b) placing the structure obtained by the step (a) in a fluorohydrocarbon vapor to dry the surface of said material layer to be etched; (c) forming a layer of positive photoresist over the surface of said material layer; (d) forming in a selected surface of said positive photoresist layer an opening exposing a surface of said material layer; and (e) etching said material layer exposed in said opening to form an opening therein, said fluorohydrocarbon vapor of step (b) being used to increase the adhesiveness of the material layer to the photoresist layer by preventing peeling of the photoresist layer from said material layer.

Claim 3

An etching method according to claim 1, wherein said material layer to be etched comprises a material selected from the group consisting of PSG, SiO 2 , and Poly Si, and wherein said organic solvent comprises a compound selected from the group consisting of iospropyl alcohol, n-propyl alcohol, n-butyl alcohol, isobutyl alcohol, n sec-butyl alcohol, and ter 6-butyl alcohol.

Claim 4

An etching method according to claim 2, wherein said process (b) comprises the step of subjecting said structure to a fluorohydrocarbon vapor of 40° to 60° C. for 10 to 15 minutes.

Claim 5

An etching method adapted for an MOS semiconductor device comprising the steps of: (a) preparing a silicon semiconductor substrate including a gate insulating layer on the surface of said substrate, and a silicon gate electrode formed on the surface of said gate insulating layer; (b) forming a PSG layer on the surface of said silicon gate electrode; (c) dipping the structure obtained by the step (b) in an organic solvent; (d) placing the structure obtained by the step (c) in a fluorohydrocarbon vapor to dry the surface of said PSG layer; (e) forming a positive photoresist layer on the surface of said PSG layer; (f) selectively removing said positive photoresist layer to form an opening exposing a surface of said PSG layer; (g) removing said exposed PSG layer to form an opening exposing the surface of said silicon gate electrode; and (h) forming a metal gate electrode connected with said silicon gate electrode after removing said positive photoresist layer, said fluorohydrocarbon vapor of step (d) being used to increase the adhesiveness of the material layer to the photoresist layer by preventing peeling of the photoresist layer from said material layer.

Claim 6

An etching method adapted for an MOS semiconductor device comprising the steps of: (a) preparing a silicon semiconductor substrate including a gate insulating layer on the surface of said substrate, and a silicon gate electrode formed on the surface of said gate insulating layer; (b) forming a PSG layer on the surface of said silicon gate electrode; (c) dipping the structure obtained by the step (b) in an organic solvent; (d) placing the structure obtained by the step (c) in a fluorohydrocarbon vapor to dry the surface of said PSG layer; (e) forming a positive photoresist layer on the surface of said PSG layer; (f) selectively removing said positive photoresist layer to form an opening exposing a surface of said PSG layer; (g) removing said exposed PSG layer to form an opening exposing the surface of said silicon gate electrode; and (h) forming a metal gate electrode connected with said silicon gate electrode after removing said positive photoresist layer, said fluorohydrocarbon vapor of step (d) being used to increase the adhesiveness of the material layer to the photoresist layer by preventing peeling of the photoresist layer from said material layer.

Claim 7

An etching method according to claim 4, wherein said organic solvent comprises a compound selected from the group consisting of isopropyl alcohol, n-propyl alcohol, n-butyl alcohol, isobutyl alcohol, sec-butyl alcohol, and ter 6-butyl alcohol.

Claim 8

An etching method according to claim 4, wherein said step (d) comprises the step of subjecting said structure to a fluorohydrocarbon vapor of 40° to 60° C. for 10 to 15 minutes.