US4683554A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Direct write nonvolatile memory cells
Assignee: Samsung Electronics Co Ltd
•
Filing: 1985-09-13
•
Granted: 1987-07-28
•
Expires: 2005-09-13
Abstract
Abstract A floating gate type nonvolatile memory cell of the general class known as electrically erasable programmable read only memories, configured with a single polysilicon layer, operable in a direct write mode, and characterized by its absence of read disturb. In one form of its practice, the floating gate is divided into three regions situated with relation to specified regions in the substrate. The first region of the floating gate is dielectrically isolated from a conductively doped region in the substrate so as to form a capacitor; the second region is similarly situated, but forms a significantly smaller capacitor and utilizes a dielectric suitable for Fowler-Nordheim tunneling or Poole-Frenkel conduction of charge therethrough; and the third region overlaps a channel of a field effect type sense transistor, conduction through which is responsive to the charge resident on the floating gate. Access to the substrate regions is by way of three electrically independent but simultaneously enabled access transistors. Writing of data is accomplished by the division of voltage between capacitors, while reading is accomplished by detecting the conductive state of the sense transistor in an electrically independent conductive path.
Inventors
- 👤 George C. Lockwood
- 👤 James A. Topich
- 👤 Raymond A. Turi
- 👤 George H. Maggard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 20:33
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/04; G11C16/0408; G11C16/0433; H; H10; H10B; H10B69/00; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/682; H10D30/683
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
283 words
A floating gate type nonvolatile memory cell formed in a semiconductor substrate, comprising: a floating gate electrode having four defined regions over the semiconductor substrate; a first conductively doped region in the substrate, situated beneath the first region of the floating gate electrode and separated therefrom by a first dielectric material layer to form thereby a coupling of first capacitance; a second conductively doped region in the substrate, situated beneath the second region of the floating gate electrode and separated therefrom by a second dielectric material layer to form a coupling of second capacitance, materially less than the first capacitance, and defined a region of charge transfer through the second dielectric material layer; third and fourth conductively doped regions in the substrate which are electrically isolated from the first and second conductively doped regions, defining therebetween a channel situated beneath the third region of the floating gate electrode and separate therefrom by a third dielectric material layer, to form a field effect transistor responsive to the charge resident on the floating gate electrode; access means for selectively connecting the third conductively doped region in the substrate to a bit line, selectively connecting the first conductively doped region in the substrate to a first write line, and selectively connecting the second conductively doped region in the substrate to a second write line; and means for selectively applying potentials of first relative polarity between the first and second write lines suitable to cause a transfer of charge in one direction through the second dielectric material layer, or of a second relative polarity between the first and second write lines to cause a transfer of charge in the opposite direction through the second dielectric material layer.
Claim 2
Dependent Claim
283 words
A floating gate type nonvolatile memory cell formed in a semiconductor substrate, comprising: a floating gate electrode having four defined regions over the semiconductor substrate; a first conductively doped region in the substrate, situated beneath the first region of the floating gate electrode and separated therefrom by a first dielectric material layer to form thereby a coupling of first capacitance; a second conductively doped region in the substrate, situated beneath the second region of the floating gate electrode and separated therefrom by a second dielectric material layer to form a coupling of second capacitance, materially less than the first capacitance, and defined a region of charge transfer through the second dielectric material layer; third and fourth conductively doped regions in the substrate which are electrically isolated from the first and second conductively doped regions, defining therebetween a channel situated beneath the third region of the floating gate electrode and separate therefrom by a third dielectric material layer, to form a field effect transistor responsive to the charge resident on the floating gate electrode; access means for selectively connecting the third conductively doped region in the substrate to a bit line, selectively connecting the first conductively doped region in the substrate to a first write line, and selectively connecting the second conductively doped region in the substrate to a second write line; and means for selectively applying potentials of first relative polarity between the first and second write lines suitable to cause a transfer of charge in one direction through the second dielectric material layer, or of a second relative polarity between the first and second write lines to cause a transfer of charge in the opposite direction through the second dielectric material layer.
Claim 3
Dependent Claim
18 words
The apparatus recited in claim 1, wherein the three selective connections of the access means are enabled simultaneously.
Claim 4
Dependent Claim
24 words
The apparatus recited in claim 2, wherein the first and second dielectric material layers are of the same composition and approximately the same thickness.
Claim 5
Dependent Claim
89 words
The apparatus recited in claim 3, wherein the potentials of first or second relative polarity created by the means for selectively applying potentials are coincident in time with the enablement of the access means, and the access means is comprised of three individual field effect transistors arranged to selectively connect the third conductively doped region in the substrate to the bit line, the first coductively doped region in the substrate to the first write line, and the second conductively doped region in the substrate to the second write line.
Claim 6
Dependent Claim
33 words
The apparatus recited in claim 4, further comprising a means for applying a potential to the bit line and for detecting the presence or absence of conduction of charge through the third region.
Claim 7
Dependent Claim
52 words
The apparatus recited in claim 5, wherein the gate electrodes of the access means field effect transistor are commonly connected to form a first row line, the fourth conductively doped region in this substrate is at ground potential, and the first capacitance exceeds the second capacitance by a ratio of approximately 8:1.
Claim 8
Dependent Claim
38 words
The apparatus recited in claim 6, wherein the floating gate electrode is a first conductive layer of doped polysilicon, and the first and second dielectric material layers are comprised of approximately 7-10 nanometers thick thermally grown silicon dioxide.
Claim 9
Dependent Claim
39 words
The apparatus recited in claim 6, wherein the floating gate electrode is a first conductive layer having refractory metal silicide, and the first and second dielectric material layers are comprised of approximately 7-10 nanometers thick thermally grown silicon dioxide.
Claim 10
Dependent Claim
43 words
The apparatus recited in claim 6, wherein multiple cells are configured into a matrix array having as row lines the first row lines and lines of ground potential, and having as column lines the bit lines and the first and second write lines.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-07-27 | 1991-01-26 | 1991-07-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-07-27 | 1995-01-26 | 1995-07-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-07-27 | 1999-01-26 | 1999-07-28 | $7700.00 | Window Closed / Lapsed |