US4683043A
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Cubic boron nitride preparation
Assignee: Battelle Development Corp
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Filing: 1986-01-21
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Granted: 1987-07-28
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Expires: 2006-01-21
Abstract
Abstract A process for producing coatings comprising cubic boron nitride on a substrate is disclosed. The process involves magnetron sputter deposition of a heated BN source in an evacuated atmosphere having a limited partial pressure of nitrogen and a noble gas. During cathodic sputtering of the BN source, a metal dopant selected from Groups IA, IVA, VA, VIIA, IB, IIB, IIIB, IVB and VB of the periodic table, the metal dopant preferably being Al or Cu, is deposited at a concentration less than 1.5 atomic percent.
Inventors
- 👤 Carl W. Melton
- 👤 Dale G. Thompson
- 👤 Larry F. Vassamillet
- 👤 Charles E. Wickersham
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:19
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0641; C23C14/0021; C23C14/0036; C23C14/0647
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
150 words
A method for deposition of cubic boron nitride on a substrate, which method comprises the steps of: (a) supporting a substrate on an rf biased electrode in a near vacuum at a base pressure below approximately 30×10 -6 torr whereby oxygen levels in deposited coatings are restricted to below 20 atomic percent, (b) heating the substrate to at least 130° C., (c) introducing a noble gas to a partial pressure not exceeding 20×10 -3 torr, (d) introducing nitrogen to a partial pressure not exceeding 5×10 -3 torr, (e) cathodically sputtering a BN source, (f) during cathodic sputtering of the BN source, cathodically sputtering a metal dopant source consisting of a metal selected from Groups IA, IVA, VA, VIIA, IB, IIB, IIIB, IVB, and VB of the periodic table such that dopant is deposited at less than 1.5 atomic percent, whereby a cubic boron nitride coating is deposited on the substrate.
Claim 2
Independent Claim
150 words
A method for deposition of cubic boron nitride on a substrate, which method comprises the steps of: (a) supporting a substrate on an rf biased electrode in a near vacuum at a base pressure below approximately 30×10 -6 torr whereby oxygen levels in deposited coatings are restricted to below 20 atomic percent, (b) heating the substrate to at least 130° C., (c) introducing a noble gas to a partial pressure not exceeding 20×10 -3 torr, (d) introducing nitrogen to a partial pressure not exceeding 5×10 -3 torr, (e) cathodically sputtering a BN source, (f) during cathodic sputtering of the BN source, cathodically sputtering a metal dopant source consisting of a metal selected from Groups IA, IVA, VA, VIIA, IB, IIB, IIIB, IVB, and VB of the periodic table such that dopant is deposited at less than 1.5 atomic percent, whereby a cubic boron nitride coating is deposited on the substrate.
Claim 3
Dependent Claim
16 words
The method according to claim 1 whereby the base pressure is below approximately 5×10 -6 torr.
Claim 4
Dependent Claim
12 words
The method according to claim 1 whereby the noble gas is argon.
Claim 5
Dependent Claim
14 words
The method according to claim 1 wherein the BN source contains the metal dopant.
Claim 6
Independent Claim
134 words
A method for deposition of cubic boron nitride on a substrate, which method comprises the steps of: (a) supporting a substrate on an rf biased electrode in a near vacuum at a base pressure below approximately 30×10 -6 torr whereby oxygen levels in deposited coatings are restricted to below 20 atomic percent (b) heating the substrate to at least 130° C. (c) introducing a noble gas to a partial pressure not exceeding 20×10 -3 torr (d) introducing nitrogen to a partial pressure not exceeding 5×10 -3 torr (e) cathodically sputtering a BN source (f) during cathodic sputtering of the BN source, cathodically sputtering a metal dopant source consisting of Al or Cu such that dopant is deposited at less than 1.5 atomic percent, whereby a cubic boron nitride coating is deposited on the substrate.
Claim 7
Independent Claim
134 words
A method for deposition of cubic boron nitride on a substrate, which method comprises the steps of: (a) supporting a substrate on an rf biased electrode in a near vacuum at a base pressure below approximately 30×10 -6 torr whereby oxygen levels in deposited coatings are restricted to below 20 atomic percent (b) heating the substrate to at least 130° C. (c) introducing a noble gas to a partial pressure not exceeding 20×10 -3 torr (d) introducing nitrogen to a partial pressure not exceeding 5×10 -3 torr (e) cathodically sputtering a BN source (f) during cathodic sputtering of the BN source, cathodically sputtering a metal dopant source consisting of Al or Cu such that dopant is deposited at less than 1.5 atomic percent, whereby a cubic boron nitride coating is deposited on the substrate.
Claim 8
Dependent Claim
16 words
The method according to claim 5 whereby the base pressure is below approximately 5×10 -6 torr.
Claim 9
Dependent Claim
12 words
The method according to claim 5 whereby the noble gas is argon.
Claim 10
Dependent Claim
14 words
The method according to claim 5 wherein the BN source contains the metal dopant.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-07-27 | 1991-01-26 | 1991-07-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-07-27 | 1995-01-26 | 1995-07-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-07-27 | 1999-01-26 | 1999-07-28 | $7700.00 | Window Closed / Lapsed |