US4426268A
Expired / Lapsed
US
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Method for forming high superconducting Tc niobium nitride film at ambient temperatures
Assignee: United States Department of the Navy
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Filing: 1983-07-12
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Granted: 1984-01-17
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Expires: 2003-07-12
Abstract
Abstract A method of forming a high T c niobium nitride (NbN) film on a substr at ambient substrate temperature. The method includes the step of reactively sputtering NbN onto the substrate in an argon-nitrogen atmosphere with controlled amounts of methane added to the argon-nitrogen gas mixture.
Inventors
- 👤 Edward J. Cukauskas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 20:53
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0641; H; H10; H10N; H10N60/00; H10N60/01; Y; Y10; Y10S; Y10S505/00; Y10S505/80; Y10S505/815; Y10S505/816
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
43 words
A method for forming a high T c niobium nitride film comprising the steps of: maintaining a substrate at ambient temperature; sputter depositing a niobium nitride (NbN) film from a niobium target cathode onto said substrate and introducing carbon into said NbN film.
Claim 2
Independent Claim
43 words
A method for forming a high T c niobium nitride film comprising the steps of: maintaining a substrate at ambient temperature; sputter depositing a niobium nitride (NbN) film from a niobium target cathode onto said substrate and introducing carbon into said NbN film.
Claim 3
Dependent Claim
47 words
The method recited in claim 1 wherein said step of introducing carbon includes the steps of; enclosing said target cathode and said substrate in a sputtering chamber; and maintaining a gas mixture in said chamber including nitrogen and methane during said step of sputter depositing said film.
Claim 4
Dependent Claim
28 words
The method recited in claim 2 further including the step of: terminating said step of sputter depositing when the thickness of said NbN film is about 400 nanometers.
Claim 5
Independent Claim
56 words
A method for forming a high T c niobium nitride (NbN) film comprising the steps of: positioning a niobium target cathode and a substrate within a sputtering chamber; introducing a gas mixture including a nitrogen and methane into said chamber; maintaining said substrate at ambient temperature; and sputter depositing a film of NbN onto said substrate.
Claim 6
Independent Claim
56 words
A method for forming a high T c niobium nitride (NbN) film comprising the steps of: positioning a niobium target cathode and a substrate within a sputtering chamber; introducing a gas mixture including a nitrogen and methane into said chamber; maintaining said substrate at ambient temperature; and sputter depositing a film of NbN onto said substrate.
Claim 7
Dependent Claim
35 words
The method recited in claim 4 further including the step of; adjusting the value of the pressure of said gas mixture to be in the range of from about 1 Pascal to about 10 Pascals.
Claim 8
Dependent Claim
33 words
The method recited in claim 5 further including the step of: adjusting the partial pressure of nitrogen in said gas mixture to be about 13% of the total pressure of said gas mixture.
Claim 9
Dependent Claim
31 words
The method recited in claim 6 further including the step of: adjusting the partial pressure of methane to be about 1% to about 20% of the pressure of said gas mixture.
Claim 10
Dependent Claim
28 words
The method recited in claim 7 further including the step of: terminating said step of sputter depositing when the thickness of said NbN film is about 400 nanometers.
Claim 11
Dependent Claim
23 words
The method recited in claim 8 further including the step of: selecting said substrate material from the group consisting of quartz and glass.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-01-16 | 1987-07-18 | 1988-01-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-01-16 | 1991-07-18 | 1992-01-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-01-16 | 1995-07-18 | 1996-01-17 | $7700.00 | Window Closed / Lapsed |