Patent US4683024A successfully refreshed from Google Patents.
US4683024A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Device fabrication method using spin-on glass resins
Assignee: Nokia Bell Labs
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Filing: 1985-02-04
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Granted: 1987-07-28
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Expires: 2005-02-04
Abstract
Abstract A new method for fabricating a device, such as a semiconductor device, is disclosed. The method includes the step of patterning a substrate with a trilevel resist containing a spin-deposited substitute for the conventional central, silicon dioxide region. This substitute includes an organosilicon glass resin in combination with metal-and-oxygen containing material. The inventive method prevents the losses of linewidth control, and avoids the pattern degradation due to undesirably many pinholes, of previous such methods.
Inventors
- 👤 David A. Miller
- 👤 Joseph M. Moran
- 👤 Gary N. Taylor
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 13:51
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/95
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
197 words
A method for fabricating a device, comprising the steps of: forming a resist on a substrate surface, said resist comprising a first region overlying said substrate, a second region overlying said first region, and a patterned third region overlying said second region; etching said second region with a second-region etchant while using said third region as an etch mask, said second-region etchant being produced by forming a plasma in a fluorine-containing gas; removing said fluorine-containing gas, introducing a first-region etchant, and etching said first region with said first-region etchant while using said second region as an etch mask; and completing the fabrication of said device, characterized in that said forming step includes the step of spin-depositing said second region, said second region including material substantially resistant to lateral etching by fluorine-containing etchant species present during the etching of said first region, the composition and/or thickness of said second region being chosen so that said third region is substantially unaffected by exposure to said second-region etchant during the time requried to etch said second region with said second-region etchant, and the pattern etched into said third region is substantially identical to the pattern existing in said first region.
Claim 2
Independent Claim
197 words
A method for fabricating a device, comprising the steps of: forming a resist on a substrate surface, said resist comprising a first region overlying said substrate, a second region overlying said first region, and a patterned third region overlying said second region; etching said second region with a second-region etchant while using said third region as an etch mask, said second-region etchant being produced by forming a plasma in a fluorine-containing gas; removing said fluorine-containing gas, introducing a first-region etchant, and etching said first region with said first-region etchant while using said second region as an etch mask; and completing the fabrication of said device, characterized in that said forming step includes the step of spin-depositing said second region, said second region including material substantially resistant to lateral etching by fluorine-containing etchant species present during the etching of said first region, the composition and/or thickness of said second region being chosen so that said third region is substantially unaffected by exposure to said second-region etchant during the time requried to etch said second region with said second-region etchant, and the pattern etched into said third region is substantially identical to the pattern existing in said first region.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein said second region includes material containing silicon chemically bound to oxygen and metal chemially bound to oxygen.
Claim 4
Dependent Claim
45 words
The method of claim 2 wherein said second region includes first and second portions, said first portion overlying said second portion which overlies said first region, said first portion including silicon chemically bound to oxygen and said second portion including metal chemically bound to oxygen.
Claim 5
Dependent Claim
16 words
The method of claim 3 wherein said first portion also includes metal chemically bound to oxygen.
Claim 6
Dependent Claim
30 words
The method of claim 3 wherein the amount of chemically bound silicon and oxygen in said first portion is greater than or equal to about 60 percent by weight solids.
Claim 7
Dependent Claim
30 words
The method of claim 3 wherein the amount of chemically bound metal and oxygen in said second portion is greater than or equal to about 90 percent by weight solids.
Claim 8
Independent Claim
181 words
A method for fabricating a device, comprising the steps of: forming a resist on a substrate surface, said resist comprising a first region overlying said substrate, a second region overlying said first region, and a patterned third region overlying said second region; etching said second region with a second-region etchant while using said third region as an etch mask, said second-region etchant being produced by forming a plasma in a fluorine-containing gas; removing said fluorine-containing gas, introducing a first-region etchant, and etching said first region with said first-region etchant while using said second region as an etch mask; and completing the fabrication of said device, characterized in that said second region includes material containing silicon chemically bound to oxygen and metal chemically bound to oxygen, the composition and/or thickness of said second region being chosen so that said third region is substantially unaffected by exposure to said second-region etchant during the time required to etch said second region with said second-region etchant, and the pattern etched into said third region is substantially identical to the pattern existing in said first region.
Claim 9
Independent Claim
181 words
A method for fabricating a device, comprising the steps of: forming a resist on a substrate surface, said resist comprising a first region overlying said substrate, a second region overlying said first region, and a patterned third region overlying said second region; etching said second region with a second-region etchant while using said third region as an etch mask, said second-region etchant being produced by forming a plasma in a fluorine-containing gas; removing said fluorine-containing gas, introducing a first-region etchant, and etching said first region with said first-region etchant while using said second region as an etch mask; and completing the fabrication of said device, characterized in that said second region includes material containing silicon chemically bound to oxygen and metal chemically bound to oxygen, the composition and/or thickness of said second region being chosen so that said third region is substantially unaffected by exposure to said second-region etchant during the time required to etch said second region with said second-region etchant, and the pattern etched into said third region is substantially identical to the pattern existing in said first region.
References Cited (Backward Citations)
US4244799A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-07-27 | 1991-01-26 | 1991-07-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-07-27 | 1995-01-26 | 1995-07-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-07-27 | 1999-01-26 | 1999-07-28 | $7700.00 | Window Closed / Lapsed |