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US4682047A Expired / Lapsed US ⏱️ 0.0 years remaining

Complementary metal-oxide-semiconductor input circuit

Assignee: Siemens AG
•
Filing: 1986-08-18
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Granted: 1987-07-21
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Expires: 2006-08-18
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Abstract

Abstract A pull-up or pull-down resistor is connected between the CMOS circuit input and an operating potential source for defining the input potential of the unconnected circuit input and is formed by a MOS transistor circuit which is controlled from the circuit input and which is conductive between the threshold voltage of the MOS transistors of the one channel type and the threshold voltage of the MOS transistors of the other channel type. This MOS transistor circuit comprises two series-connected transistors which are controlled by two oppositely greatly asymmetrical CMOS inverters which have their inputs connected to the circuit input.

Inventors

  • 👤 Frithjof von Sichart

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-04 11:25
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/01; H03K19/017; H03K19/01707; H03K19/01721; G; G01; G01R; G01R19/00; G01R19/165; G01R19/16504; G01R19/16519; H03K5/00; H03K5/153; H03K5/1534

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 179 words
In a complementary metal-oxide-semiconductor circuit of the type which includes a circuit input, complementary metal-oxide-semiconductor transistors each having a threshold voltage, and an operating voltage source, the improvement of an input circuit comprising a switched resistor which is controlled from the input to define the potential at the input terminal when the same is not connected, said improvement comprising: a metal-oxide-semiconductor transistor circuit including first and second serially connected transistors connected between the circuit input and the operating voltage source, said first transistor having a gate and a first threshold voltage near the threshold voltage of one of the channel types, said second transistor having a gate and a second threshold voltage near the threshold voltage of the other channel type, said first and second threshold voltages lying in a region between the threshold voltages of the complementary metal-oxide-semiconductor transistors; and control means connected between the input and said gates and responsive to the potential at the input to operate said first and second transistors to states of conductivity which cause a potential to be defined at the input.
Claim 2
Dependent Claim 179 words
In a complementary metal-oxide-semiconductor circuit of the type which includes a circuit input, complementary metal-oxide-semiconductor transistors each having a threshold voltage, and an operating voltage source, the improvement of an input circuit comprising a switched resistor which is controlled from the input to define the potential at the input terminal when the same is not connected, said improvement comprising: a metal-oxide-semiconductor transistor circuit including first and second serially connected transistors connected between the circuit input and the operating voltage source, said first transistor having a gate and a first threshold voltage near the threshold voltage of one of the channel types, said second transistor having a gate and a second threshold voltage near the threshold voltage of the other channel type, said first and second threshold voltages lying in a region between the threshold voltages of the complementary metal-oxide-semiconductor transistors; and control means connected between the input and said gates and responsive to the potential at the input to operate said first and second transistors to states of conductivity which cause a potential to be defined at the input.
Claim 3
Dependent Claim 45 words
The improved semiconductor circuit of claim 1, wherein: said first and second transistors are complementary metal-oxide-semiconductor transistors; and said control means comprises two oppositely asymmetrical complementary metal-oxide-semiconductor inverters each including an input connected to the circuit input and an output connected to a respective gate.
Claim 4
Dependent Claim 67 words
The improved semiconductor circuit of claim 1, wherein: said first and second transistors are of the same channel type; and said control means comprises two oppositely asymmetrical complementary metal-oxide-semiconductor inverters each including an input connected to the circuit input, and an output, an inverter connecting one of said outputs to one of said gates, and the other of said outputs connected to the other of said gates.
Claim 5
Dependent Claim 63 words
The improved semiconductor circuit of claim 2 or 3, wherein: said two oppositely asymmetrically complementary metal-oxide semiconductor inverters each include two transistors having, respective channel width to channel length ratios such that the ratio of the resistance of the two conducting transistors is great with respect to 1 for one of the inverters and small with respect to one for the other inverter.

References Cited (Backward Citations)

US4066918A Cited
US4302690A Cited
US4264941A Cited
US4438352A Cited
US4527077A Cited
US4628218A Cited
US4498021A Cited
US4594519A Cited
JPH111525A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-07-20 1991-01-19 1991-07-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-07-20 1995-01-19 1995-07-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-07-20 1999-01-19 1999-07-21 $7700.00 Window Closed / Lapsed

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