US4681652A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Manufacture of polycrystalline silicon
Assignee: Individual
•
Filing: 1980-06-05
•
Granted: 1987-07-21
•
Expires: 2000-06-05
Abstract
Abstract Process of growing polysilicon on a plurality of deposition members grouped in a double ring, i.e., an outer circle surrounding an inner circle of members.
Inventors
- 👤 Leo C. Rogers
- 👤 Alfred J. Heitz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 15:11
CPC Classifications
C; C01; C01B; C01B33/00; C01B33/02; C01B33/021; C01B33/027; C01B33/035; C23; C23C; C23C16/00; C23C16/22; C23C16/24
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
117 words
In a process of producing polycrystalline or monocrystalline silicon by thermal decomposition and deposition of a silicon-containing composition upon a plurality of deposition members within a reactor chamber, the improvement which comprises the step of mounting the deposition members in an outer ring 50 and an inner ring surrounded by the outer ring that the deposition members of the outer ring are positioned so as to intercept and absorb the outward radiation from the inner ring in order to cause the outer ring deposition members to act as an insulative barrier to the heat from the inner ring's radiation and thus to prevent loss of a substantial amount of heat radiated by the inner ring deposition members.
Claim 2
Dependent Claim
117 words
In a process of producing polycrystalline or monocrystalline silicon by thermal decomposition and deposition of a silicon-containing composition upon a plurality of deposition members within a reactor chamber, the improvement which comprises the step of mounting the deposition members in an outer ring 50 and an inner ring surrounded by the outer ring that the deposition members of the outer ring are positioned so as to intercept and absorb the outward radiation from the inner ring in order to cause the outer ring deposition members to act as an insulative barrier to the heat from the inner ring's radiation and thus to prevent loss of a substantial amount of heat radiated by the inner ring deposition members.
Claim 3
Dependent Claim
29 words
A process as recited in claim 1 wherein the deposition members are provided in pairs and the outer ring has at least one more pair than the inner ring.
Claim 4
Dependent Claim
18 words
A process as recited in claim 2 wherein the inner ring is provided with two pairs deposition members.
Claim 5
Dependent Claim
18 words
A process as recited in claim 1 wherein the inner ring has more than two pairs deposition members.
Claim 6
Dependent Claim
15 words
A process as recited in claim 1 wherein said deposition members are tungsten or tantalum.
Claim 7
Dependent Claim
13 words
A process as recited in claim 1 wherein said deposition members are silicon.
Claim 8
Dependent Claim
28 words
A process as recited in claim 1 wherein the composition is selected from the group consisting of silicon tetrachloride, dichlorosilane, trichlorosilane, and mixtures thereof in a carrier gas.
References Cited (Backward Citations)
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Cited
DE1212948B
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US3328199A
Cited
US3594227A
Cited
US3911194A
Cited
US4155781A
Cited
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Cited
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Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-07-20 | 1991-01-19 | 1991-07-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-07-20 | 1995-01-19 | 1995-07-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-07-20 | 1999-01-19 | 1999-07-21 | $7700.00 | Window Closed / Lapsed |