Light emitting diode

Claim 2

A light emitting diode comprising a multilayer semiconductor crystal having a p-n hetero junction structure comprising a substrate of a first conductivity type, a GaAsP graded layer of said first conductivity type formed on said substrate, an active layer of GaAsP of said first conductivity type formed on said graded layer, and a window layer of either InGaP or InGaAsP of a second conductivity type formed on said active layer; a first electrode provided on the top surface of said crytal and having an aperture permitting the exit of light emitted from an emitting region of said active layer through said window layer; and a second electrode provided on the bottom surface of said crystal.

Claim 3

A light emitting diode as claimed in claim 1 in which said window layer has lattice misfit of 5×10 -3 or less at the region extending from said p-n hetero junction to a distance of carrier diffusion length measured from said hetero junction.

Claim 4

A light emitting diode as claimed in claim 2 in which said window layer has a thickness ranging from one to five microns.

Claim 5

A light emitting diode as claimed in claim 1 in which said crystal further has another hetero junction structure comprising said active layer and a confining layer of either InGaP or InGaAsP.

Claim 6

A light emitting diode comprising: a multilayer semiconductor crystal having a p-n hetero junction structure comprising a substrate of a first conductivity type, a GaAsP graded layer of said first conductivity type formed on said substrate, an active layer of GaAsP of said first conductivity type formed on said graded layer, and a window layer of either InGaP or InGaAsP of a second conductivity type formed on said active layer; said window layer being exposed on the top surface of said crystal and having lattice misfit of 5×10 -3 or less at the region adjacent to the p-n hetero junction within a distance of a carrier diffusion length in said window layer; a first electrode partially provided on the top surface of said crystal permitting the exit of light emitted from an emitting region of said active layer through said window layer; and a second electrode provided on the bottom surface of said crystal.

Claim 7

A light emitting diode comprising: a multilayer semiconductor crystal having a p-n hetero junction structure comprising a substrate of a first conductivity type, a GaAsP graded layer of said first conductivity type formed on said substrate, an active layer of GaAsP of said first conductivity type formed on said graded layer, and a window layer of either InGaP or InGaAsP of a second conductivity type formed on said active layer; said window layer being exposed on the top surface of said crystal and having lattice misfit of 5×10 -3 or less at the region adjacent to the p-n hetero junction within a distance of a carrier diffusion length in said window layer; a first electrode partially provided on the top surface of said crystal permitting the exit of light emitted from an emitting region of said active layer through said window layer; and a second electrode provided on the bottom surface of said crystal.

Claim 8

A light emitting diode, comprising a multilayer semiconductor crystal inlcuding a substrate of a first conductivity type and a p-n hetero junction structure having a graded layer of aid first conductivity type arranged on said substrate, an active layer of said first conductivity type arranged on said graded layer and a window layer of a second conductivity type arranged on said active layer; a diffusion layer formed in one of said substrate and said window layer; a first electrode mounted on said window layer; and a second electrode mounted on said substrate; and wherein said active layer is formed of GaAsP and said window layer is formed of either InGaP or InGaAsP.

Claim 9

A light emitting diode, comprising a multilayer semiconductor crystal inlcuding a substrate of a first conductivity type and a p-n hetero junction structure having a graded layer of aid first conductivity type arranged on said substrate, an active layer of said first conductivity type arranged on said graded layer and a window layer of a second conductivity type arranged on said active layer; a diffusion layer formed in one of said substrate and said window layer; a first electrode mounted on said window layer; and a second electrode mounted on said substrate; and wherein said active layer is formed of GaAsP and said window layer is formed of either InGaP or InGaAsP.

Claim 10

The light emitting diode of claim 6, wherein said window layer has a lattice misfit of 5×10 -3 or less at the region extending from said p-n hetero junction to a distance of carrier diffusion length measured from said hetero junction.

Claim 11

The light emitting diode of claim 7, wherein said window layer has a thickness of between one and five microns.

Claim 12

The light emitting diode of claim 6, wherein a confining layer of InGaP or InGaAsP is arranged between said graded layer and said active layer, thereby to form a double hetero junction structure.

Claim 13

The light emtting diode of claim 9, wherein said window layer and said confining layer each have a lattic misfit of 5×10 -3 or less.

Claim 14

A light emitting diode comprising a multilayer semiconductor crystal having a p-n hetero junction structure comprising a substrate of a first conductivity type, a GaAsP graded layer of said first conductivity type formed on said substrate, an active layer of GaAsP of said first conductivity type formed on said graded layer, and a window layer of a material selected from the group of InGaP and InGaAsP and of a second conductivity type formed on said active layer; a first electrode provided on the top surface of said crystal permitting exit of light emitted from an emitting region of said active layer through said window layer; and a second electrode provided on the bottom surface of said crystal.

Claim 15

A light emitting diode comprising a multilayer semiconductor crystal having a p-n hetero junction structure comprising a substrate of a first conductivity type, a GaAsP graded layer of said first conductivity type formed on said substrate, an active layer of GaAsP of said first conductivity type formed on said graded layer, and a window layer of a material selected from the group of InGaP and InGaAsP and of a second conductivity type formed on said active layer; a first electrode provided on the top surface of said crystal permitting exit of light emitted from an emitting region of said active layer through said window layer; and a second electrode provided on the bottom surface of said crystal.

Claim 16

A light emitting diode as claimed in claim 11 in which said window layer has lattice misfit of 5×10 -3 or less at the region extending from said p-n hetero junction to a distance of carrier diffusion length measured from said hetero junction.

Claim 17

A light emtting diode as claimed in claim 12 in which said window layer has a thickness ranging from one to five microns.

Claim 18

A light emitting diode as claimed in claim 11 in said crystal further has another hetero junction structure consisting of said active layer and a confining layer of a material selected from the group of InGaP and InGaAsP.