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US4678539A
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Dry-etching method
Assignee: Panasonic Holdings Corp
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Filing: 1985-11-19
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Granted: 1987-07-07
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Expires: 2005-11-19
Abstract
Abstract A dry-etching method for etching materials of the silicon group comprises: providing the material to be etched in a reaction chamber; supplying a mixed gas as the etching gas comprising carbon fluoride, oxygen and another gas wherein the other gas is a partially halogenated hydrocarbon; and thereafter subjecting the etching gas to high frequency electric current so as to make the mixed gas into a plasma whereby the material is etched.
Inventors
- 👤 Kazuyuki Tomita
- 👤 Masuo Tanno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 06:37
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/53; C04B41/5338; C04B41/5346; C04B41/80; C04B41/91; H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
82 words
A dry-etching method for etching silicon nitride having steps of: setting an etched material of said silicon nitride into a reaction chamber, supplying a mixed gas as an etching gas, which is made of carbon fluoride, oxygen and another gas having such a molecular structure that a part of hydrogen of hydro-carbon is replaced by bromine, into said reaction chamber, and giving high frequency electric power so as to make said mixed gas as plasma state and to etch said etched material.
Claim 2
Dependent Claim
82 words
A dry-etching method for etching silicon nitride having steps of: setting an etched material of said silicon nitride into a reaction chamber, supplying a mixed gas as an etching gas, which is made of carbon fluoride, oxygen and another gas having such a molecular structure that a part of hydrogen of hydro-carbon is replaced by bromine, into said reaction chamber, and giving high frequency electric power so as to make said mixed gas as plasma state and to etch said etched material.
Claim 3
Dependent Claim
26 words
A dry-etching method in accordance with claim 1, wherein said etching gas is a mixed gas of CF 4 , O 2 and CH 3 Br.
Claim 4
Dependent Claim
22 words
The method according to claim 2, wherein in said method about four to about eight volume percent CH 3 Br is employed.
Claim 5
Dependent Claim
24 words
The dry-etching method according to claim 2, wherein in said method about two to about twelve volume percent of CH 3 Br is employed.
Claim 6
Dependent Claim
25 words
The method according to claim 2, wherein in said method about four volume percent to about ten volume percent of CH 3 Br is employed.
Claim 7
Independent Claim
49 words
A method for dry-etching comprising: providing a silicon nitride containing material to be etched into a reaction chamber; etching said material by contacting said material with the constituents of a plasma formed in a gas mixture which contains carbon floride, oxygen and a partially brominated or partially iodated hydrocarbon.
Claim 8
Independent Claim
49 words
A method for dry-etching comprising: providing a silicon nitride containing material to be etched into a reaction chamber; etching said material by contacting said material with the constituents of a plasma formed in a gas mixture which contains carbon floride, oxygen and a partially brominated or partially iodated hydrocarbon.
Claim 9
Dependent Claim
28 words
The method according to claim 6, wherein in said method about two to about 12 volume percent of said partially brominated or said partially iodated hydrocarbon is employed.
Claim 10
Dependent Claim
25 words
The method according to claim 6, wherein in said method about six volume percent of said partially brominated or said partially iodated hydrocarbon is employed.
Claim 11
Dependent Claim
28 words
The method according to claim 6, wherein in said method about four to about eight volume percent of said partially brominated or said partially iodated hydrocarbon is employed.
References Cited (Backward Citations)
US4374698A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-07-06 | 1991-01-05 | 1991-07-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-07-06 | 1995-01-05 | 1995-07-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-07-06 | 1999-01-05 | 1999-07-07 | $7700.00 | Window Closed / Lapsed |