High purity silane and silicon production

Claim 2

An improved process for the production of silane from metallurgical grade silicon comprising: (a) reacting metallurgical silicon with hydrogen and silicon tetrachloride in a reaction zone maintained at a temperature of from about 400° C. to about 600° C. and at a pressure above the critical pressure of the mixture of hydrogen and silicon tetrachloride vapor and in the range of from about 300 to about 600 psi to form trichlorosilane and dichlorosilane said reaction zone comprising an iron-containing reactor susceptible to corrosion in the presence of said reaction mixture; (b) separating said trichlorosilane and dichlorosilane as overhead from unreacted silicon tetrachloride in a distillation zone; (c) recycling separated silicon tetrachloride from said distillation zone to said reaction zone for reaction with additional quantities of metallurgical silicon and hydrogen; (d) subjecting said trichlorosilane and dichlorosilane to a temperature capable of causing the disproportionation thereof in a disproportionation reaction zone containing said disproportionation constituting reactions resulting in the formation of product silane and by-product mono-, di- and trichlorosilane and silicon tetrachloride; (e) recycling said by-product mono-, di- and trichlorosilane and silicon tetrachloride to said distillation zone and said disproportionation reaction zone for further separation and disproportionation therein, and (f) recovering high purity silane from said disproportionation zone, said reaction pressure enables an advantageous combination of desirable trichlorosilane yield and minimum and desired corrosion effects to be achieved in the reaction zone, facilitating the overall production of silane from metallurgical grade silicon in pratical commercial operations.

Claim 3

The process of claim 1 in which said reaction zone temperature is from about 450° C. to about 550° C.

Claim 4

The process of claim 1 in which said reaction zone pressure is from about 400 to about 600 psi.

Claim 5

The process of claim 1 in which said reaction zone comprises a fluid bed reaction zone.

Claim 6

The process of claim 1 in which said disproportionation catalyst comprises insoluble, solid anion exchange resin containing tertiary amino or quaternary ammonium groups bonded to carbon.

Claim 7

The process of claim 1 and including premixing said hydrogen and silicon tetrachloride and heating the mixture to said reaction temperature at a pressure above the critical pressure of the mixture and in the range of from about 300 to about 600 psi.

Claim 8

The process of claim 1 and including preheating said hydrogen to from about 400° C. to about 600° C. at a pressure above the critical pressure of the mixture of hydrogen and silicon tetrachloride vapor and in the range of from about 300 to about 600 psi, and separately preheating said silicon tetrachloride to from about 400° C. to about 600° C. at a pressure in excess of the critical pressure of silicon tetrachloride and up to about 600 psi, with said preheated silicon tetrachloride being passed to the reaction zone at the desired reaction pressure above said critical pressure of the mixture of hydrogen and silicon tetrachloride and in said range of from about 300 to about 600 psi, said separatedly preheated hydrogen and silicon tetrachloride being mixed upon passage to the reaction zone.

Claim 9

The pressure of claim 7 in which the reaction zone temperature is from about 450° C. to about 550° C.

Claim 10

The process of claim 5 in which said ion exchange resin is macroreticular and contains tertiary amino groups.

Claim 11

An improved process for the production of polycrystalline silicon from metallurgical grade silicon comprising: (a) reacting metallurgical silicon with hydrogen and silicon tetrachloride in a reaction zone maintained at a temperature of from about 400° C. to about 600° C. and at a pressure above the critical pressure of the mixture of hydrogen and silicon tetrachloride vapor and in the range of from about 300 to about 600 psi to form trichlorosilane and dichlorosilane said reaction zone comprising an iron-containing reactor susceptible to corrosion in the presence of said reaction mixture; (b) separating said trichlorosilane as overhead from unreacted silicon tetrachloride in a distillation zone; (c) recycling separated silicon tetrachloride from said distillation zone to said reaction zone for reaction with additional quantitites of metallurgical silicon and hydrogen; (d) subjecting said trichlorosilane to a temperature capable of causing the disproportionation thereof in a disproportionation reaction zone containing a disproportionation catalyst, said disproportionation constituting reactions resulting in the formation of silane gas and mono-, di- and trichlorosilane and silicon tetrachloride; (e) recycling said mono, di-, and trichlorosilane and silicon tetrachloride and unreacted trichlorosilane to said distillation zone and said disproportionation reaction zone for further separation and disproportionation therein; (f) passing silane formed in said disproportionation reaction zone to a silane decomposition zone maintained at a temperature within the decomposition temperature range of silane, thereby causing said silane to decompose and to form high purity polycrystalline silicon and by-product hydrogen; (g) separating said high purity silicon from said by-product hydrogen, whereby said reaction pressure enables an advantageous combination of desirable trichlorosilane yield and minimum undesired corrosion effects to be achieved in the reaction zone, facilitating the overall production of high purity silicon from metallurgical grade material in practical commercial operations.

Claim 12

An improved process for the production of polycrystalline silicon from metallurgical grade silicon comprising: (a) reacting metallurgical silicon with hydrogen and silicon tetrachloride in a reaction zone maintained at a temperature of from about 400° C. to about 600° C. and at a pressure above the critical pressure of the mixture of hydrogen and silicon tetrachloride vapor and in the range of from about 300 to about 600 psi to form trichlorosilane and dichlorosilane said reaction zone comprising an iron-containing reactor susceptible to corrosion in the presence of said reaction mixture; (b) separating said trichlorosilane as overhead from unreacted silicon tetrachloride in a distillation zone; (c) recycling separated silicon tetrachloride from said distillation zone to said reaction zone for reaction with additional quantitites of metallurgical silicon and hydrogen; (d) subjecting said trichlorosilane to a temperature capable of causing the disproportionation thereof in a disproportionation reaction zone containing a disproportionation catalyst, said disproportionation constituting reactions resulting in the formation of silane gas and mono-, di- and trichlorosilane and silicon tetrachloride; (e) recycling said mono, di-, and trichlorosilane and silicon tetrachloride and unreacted trichlorosilane to said distillation zone and said disproportionation reaction zone for further separation and disproportionation therein; (f) passing silane formed in said disproportionation reaction zone to a silane decomposition zone maintained at a temperature within the decomposition temperature range of silane, thereby causing said silane to decompose and to form high purity polycrystalline silicon and by-product hydrogen; (g) separating said high purity silicon from said by-product hydrogen, whereby said reaction pressure enables an advantageous combination of desirable trichlorosilane yield and minimum undesired corrosion effects to be achieved in the reaction zone, facilitating the overall production of high purity silicon from metallurgical grade material in practical commercial operations.

Claim 13

The process of claim 10 in which said reaction zone is maintained at a temperature of from about 450° C. to about 550° C.

Claim 14

The process of claim 10 in which said reaction zone pressure is from about 400 to about 600 psi.

Claim 15

The process of claim 12 in which said reaction zone comprises a fluid bed reaction zone.

Claim 16

The process of claim 10 in which said disproportionation catalyst comprises insoluble, solid anion exchange resin containing tertiary amino or quaternary ammonium groups bonded to carbon.

Claim 17

The process of claim 14 in which said ion exchange resin is macroreticular and contains tertiary amino groups.

Claim 18

The process of claim 10 and including passing said high purity silicon separated from by-product hydrogen to a melting zone maintained at a temperature above the melting point of silicon, thereby obtaining a high purity, polycrystalline silicon melt from which high purity single crystal silicon can be obtained for solar cell or semiconductor applications.

Claim 19

The process of claim 10 in which said silane decomposition zone comprises the hot free space zone of a decomposition reactor, said silicon being formed as a silicon powder and including passing said silicon powder and by-product hydrogen from said free space zone to a separation zone for said separation of silicon powder from by-product hydrogen, said silicon powder being passed from said separation zone to said melting zone so as to minimize exposure of said product silicon to sources of potential impurities, thereby assuring the high quality of the product polycrystalline silicon.

Claim 20

The process of claim 10 in which said silane decomposition zone comprises a fluid bed silicon reaction zone containing a bed of silicon particles upon which silicon is deposited by the heterogeneous decomposition of silane within said decomposition zone.

Claim 21

The process of claim 10 and including premixing said hydrogen and silicon tetrachloride and heating the mixture to said reaction temperature at a pressure above the critical pressure thereof and in the range of from about 300 to about 600 psi.

Claim 22

The process of claim 10 and including preheating said hydrogen to from about 400° C. to about 600° C. at a pressure above the critical pressure of the mixture of hydrogen and silicon tetrachloride and in the range of from about 300 to about 600 psi, and separately preheating said silicon tetrachloride vapor to from about 400° C. to about 600° C. at a pressure in excess of the critical pressure of silicon tetrachloride and up to about 600 psi, with said preheated silicon tetrachloride being passed to the reaction zone at the reaction pressure above said critical pressure of the mixture of hydrogen and silicon tetrachloride and in said range of from about 300 to about 600 psi, said separately preheated hydrogen and silicon tetrachloride being mixed upon passage to the reaction zone.

Claim 23

The process of claim 20 in which the reaction pressure is less than the pressure at which the silicon tetrachloride is preheated, and including decreasing the pressure of said preheated silicon tetrachloride to the reaction pressure prior to being mixed with the separately preheated hydrogen.

Claim 24

The process of claim 20 in which the reaction zone is maintained at a temperature of from about 450° C. to about 550° C.