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US3979490A
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Method for the manufacture of tubular bodies of semiconductor material
Assignee: Siemens AG
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Filing: 1973-11-19
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Granted: 1976-09-07
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Expires: 1993-11-19
Abstract
Abstract For the manufacture of tubular bodies of semiconductor material, particularly of silicon, by the precipitation of a layer in the form of a hollow cylinder on a rod or tube-shaped, electrically heated carrier in a reaction gas suitable for the deposition of the semiconductor in question, with subsequent separation of the semiconductor layer from the carrier, the carrier is differentially heated in such a manner that the generated hollow-cylinder layer is given an annular, bead-like reinforcement; the separation of the tube obtained into parts is achieved by a cut made within the reinforcement.
Inventors
- 👤 Wolfgang Dietze
- 👤 Konrad Reuschel
- 👤 Andreas Kasper
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 12:37
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/01; C30; C30B; C30B23/00
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
174 words
Method of producing a tubular shaped body of silicon semiconductor material and concurrently provide said tubular shaped body with an annular reinforcement, the steps of: heating by electrical means a rod or tube-shaped carrier body of carbon in the presence of reaction gases selected from the groups consisting of H 2 and SiHCl 3 , or H 2 and SiCl 4 , for the precipitation of said semiconductor material to temperature sufficient to cause precipitation out of said reaction gases of a layer of semiconductor material on the surface of the carrier body; simultaneously therewith, heating by electrical means, a surface of at least one annular zone, disposed about the periphery of the carrier body to a temperature different to that of the remainder of the carrier body to cause more rapid precipitation out on the surface of said annular zone of the carrier body to form an annular reinforcement of greater wall thickness than the tubular shaped body; and separating the tubular shaped body of semiconductor having an annular reinforcement from the carrier
Claim 2
Dependent Claim
174 words
Method of producing a tubular shaped body of silicon semiconductor material and concurrently provide said tubular shaped body with an annular reinforcement, the steps of: heating by electrical means a rod or tube-shaped carrier body of carbon in the presence of reaction gases selected from the groups consisting of H 2 and SiHCl 3 , or H 2 and SiCl 4 , for the precipitation of said semiconductor material to temperature sufficient to cause precipitation out of said reaction gases of a layer of semiconductor material on the surface of the carrier body; simultaneously therewith, heating by electrical means, a surface of at least one annular zone, disposed about the periphery of the carrier body to a temperature different to that of the remainder of the carrier body to cause more rapid precipitation out on the surface of said annular zone of the carrier body to form an annular reinforcement of greater wall thickness than the tubular shaped body; and separating the tubular shaped body of semiconductor having an annular reinforcement from the carrier
Claim 3
Dependent Claim
14 words
The method of claim 1, wherein the feature at least the ends of the
Claim 4
Dependent Claim
12 words
The method of claim 1, wherein the reinforcement is at an intended
Claim 5
Dependent Claim
37 words
The method of claim 1, wherein the composition of the reaction gases and the temperatures of the carrier surface are adjusted so that a further increase in temperature at the carrier surface causes an increase in the
Claim 6
Dependent Claim
12 words
The method of claim 1, wherein an insulating coolant of hydrogen gas,
Claim 7
Dependent Claim
41 words
Method as claimed in claim 1, including the steps of: heating the carrier body provided with an electrical conductor disposed coaxially therein, said conductor having a different current conducting cross-sectional area to that of the remainder of the conductor at a
Claim 8
Dependent Claim
35 words
Method as claimed in claim 1, including the steps of: heating the carrier body provided with a different cross-sectional area to that of the remainder of the carrier body and disposed opposite to the surface
Claim 9
Dependent Claim
42 words
The method of claim 2, wherein a joint is ground at least one of the reinforced ends and a tube for feeding a gas into or discharging a gas from the tubular shaped body is connected to the tubular shaped body at
Claim 10
Dependent Claim
170 words
Method of producing a tubular shaped body of silicon semiconductor material and concurrently provide said tubular shaped body with an annular reinforcement, the steps of: heating a rod or tube-shaped carrier body of carbon in the presence of reaction gases selected from the group consisting of H 2 and SiHCl 3 or H 2 and SiCl 4 for the precipitation of said semiconductor material to a temperature sufficient to cause precipitation out of said reaction gases of a layer of semiconductor material on the surface of the carrier body, simultaneously therewith, heating a surface of at least one annular zone, disposed about the periphery of the carrier body to a temperature different to that of the remainder of the carrier body to cause more rapid precipitation out on the surface of said annular zone of the carrier body to form an annular reinforcement of greater wall thickness than the tubular body, said heating being effected by passage of an electric current from a single energy source through said carrier body.
Claim 11
Dependent Claim
170 words
Method of producing a tubular shaped body of silicon semiconductor material and concurrently provide said tubular shaped body with an annular reinforcement, the steps of: heating a rod or tube-shaped carrier body of carbon in the presence of reaction gases selected from the group consisting of H 2 and SiHCl 3 or H 2 and SiCl 4 for the precipitation of said semiconductor material to a temperature sufficient to cause precipitation out of said reaction gases of a layer of semiconductor material on the surface of the carrier body, simultaneously therewith, heating a surface of at least one annular zone, disposed about the periphery of the carrier body to a temperature different to that of the remainder of the carrier body to cause more rapid precipitation out on the surface of said annular zone of the carrier body to form an annular reinforcement of greater wall thickness than the tubular body, said heating being effected by passage of an electric current from a single energy source through said carrier body.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-09-07 | 1980-03-08 | 1980-09-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-09-07 | 1984-03-08 | 1984-09-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-09-07 | 1988-03-08 | 1988-09-07 | $7700.00 | Window Closed / Lapsed |