FET output drive circuit with parasitic transistor inhibition

Claim 2

An output drive circuit, comprising: first and second field effect transistors (FETs), each FET formed in a well of doped semiconductor material which is set in an integrated circuit substrate of oppositely doped semiconductor material and characterized by respective parasitic bipolar transistors, an input terminal connected in common to the first and second FETs, an output terminal connected to the first FET, a positive voltage bus connected to the drains of the first and second FETs, means inhibiting conduction of the parasitic bipolar transistor for the second FET, means coupling the first and second FETs to establish a source voltage level for the first FET at relatively low output terminal loads which inhibits conduction of the parasitic bipolar transistor for the first FET, with resulting relatively high input and output impedances and a high voltage swing approaching the positive bus voltage for the first FET, the coupling means permitting conduction of the parasitic bipolar transistor for the first FET at relatively high output terminal loads with an accompanying decrease in output impedance, and current source means directing current through the two FETs, the current value of the current source means being scaled relative to the FET area scalings to maintain the source voltages of the two FETs sufficiently close together at low output terminal loads to sustain the inhibition of conduction for the first FET's parasitic bipolar transistor.

Claim 3

The output drive circuit of claim 1, wherein the means inhibiting conduction of the parasitic bipolar transistor for the second FET comprises means connecting the second FET's back-gate to its source.

Claim 4

The output drive circuit of claim 1, wherein the means coupling the first and second FETs comprises means coupling the back-gates of the two FETs to maintain the FET voltages at comparable levels for low output terminal loads.

Claim 5

The output drive circuit of claim 3, the first and second FETs being fabricated in a common well of doped semiconductor material which provides back-gate coupling between the two FETs.

Claim 6

The output drive circuit of claim 1, the FET sources and drain being coupled in common to respective voltages buses, the current source means comprising first and second current sources connected respectively to the source-drain circuits of the first and second FETs, and the FETs and current sources being scaled in size to establish approximately equal current density values in the two FETs at relatively low output terminal loads.

Claim 7

The output drive circuit of claim 5, wherein the two FETs are substantially equal in size, and the two current sources are substantially equal in current value.

Claim 8

An output drive circuit, comprising: a first field effect transistor (FET) formed in a well of doped semiconductor material which is set in an integrated circuit substrate of oppositely doped semiconductor material and characterized by a parasitic bipolar transistor, an output terminal connected to the source-drain circuit of the first FET, a second FET formed in a well of doped semiconductor material which is set in the integrated circuit substrate and characterized by a parasitic bipolar transistor, a positive voltage bus connected to the drains of the first and second FETs, means inhibiting conduction of the parasitic bipolar transistor for the second FET, an input terminal connected in common to the gates of the first and second FETs, first and second current sources connected to drive respective currents through the drain-source current paths of the first and second FETs, respectively, and the second FET being coupled to the first FET and the current values of the current sources being selected to limit the FET source voltages to levels which inhibit conduction of the parasitic bipolar transistor associated with the first FET during relatively low output terminal loads, thereby establishing relatively high input and output impedances and a high voltage swing approaching the positive bus voltage for the first FET, the current sources permitting the parasitic bipolar transistor for the first FET to become conductive at relatively high output terminal loads with an accompanying decrease in output impedance.

Claim 9

An output drive circuit, comprising: a first field effect transistor (FET) formed in a well of doped semiconductor material which is set in an integrated circuit substrate of oppositely doped semiconductor material and characterized by a parasitic bipolar transistor, an output terminal connected to the source-drain circuit of the first FET, a second FET formed in a well of doped semiconductor material which is set in the integrated circuit substrate and characterized by a parasitic bipolar transistor, a positive voltage bus connected to the drains of the first and second FETs, means inhibiting conduction of the parasitic bipolar transistor for the second FET, an input terminal connected in common to the gates of the first and second FETs, first and second current sources connected to drive respective currents through the drain-source current paths of the first and second FETs, respectively, and the second FET being coupled to the first FET and the current values of the current sources being selected to limit the FET source voltages to levels which inhibit conduction of the parasitic bipolar transistor associated with the first FET during relatively low output terminal loads, thereby establishing relatively high input and output impedances and a high voltage swing approaching the positive bus voltage for the first FET, the current sources permitting the parasitic bipolar transistor for the first FET to become conductive at relatively high output terminal loads with an accompanying decrease in output impedance.

Claim 10

The output drive circuit of claim 7, wherein the block-gate of the second FET is coupled to the back-gate of the first FET to maintain the FET voltages at comparable levels for low output terminal loads.

Claim 11

The output drive circuit of claim 7, wherein the first and second FETs are of similar size and the first and second current sources provide similar quiescent loads to the first and second FETs.

Claim 12

An output drive circuit, comprising: a positive voltage bus, first and second field effect transistors (FETs), each FET formed in a well of semiconductor material which is set in an integrated circuit substrate of oppositely doped semiconductor material and characterized by respective parasitic bipolar transistors and a common back-gate connection, the FET drains being connected to the positive voltage bus, an output terminal connected to the first FET, an input terminal connected to the FETs, means connecting the base of the parasitic bipolar transistor for the second FET with its collector-emitter circuit to prevent it from becoming conductive, and first and second current sources connected respectively to provide on the source-drain current paths of the first and second FETs, the FET area scalings and current values of the current sources being approximately balanced to limit the FET source voltages to levels which hold the parasitic bipolar transistor for the first FET in a non-conductive state for relatively low output terminal loads under the influence of its common back-base connection with the second FET, and thereby establishing relatively high input and output impedances and a high voltage swing approaching the positive bus voltage for the first FET, the current sources being small enough in current value so that the parasitic bipolar transistor for the first FET becomes conductive at relatively high output terminal loads with an accompanying decrease in output impedance.

Claim 13

An output drive circuit, comprising: a positive voltage bus, first and second field effect transistors (FETs), each FET formed in a well of semiconductor material which is set in an integrated circuit substrate of oppositely doped semiconductor material and characterized by respective parasitic bipolar transistors and a common back-gate connection, the FET drains being connected to the positive voltage bus, an output terminal connected to the first FET, an input terminal connected to the FETs, means connecting the base of the parasitic bipolar transistor for the second FET with its collector-emitter circuit to prevent it from becoming conductive, and first and second current sources connected respectively to provide on the source-drain current paths of the first and second FETs, the FET area scalings and current values of the current sources being approximately balanced to limit the FET source voltages to levels which hold the parasitic bipolar transistor for the first FET in a non-conductive state for relatively low output terminal loads under the influence of its common back-base connection with the second FET, and thereby establishing relatively high input and output impedances and a high voltage swing approaching the positive bus voltage for the first FET, the current sources being small enough in current value so that the parasitic bipolar transistor for the first FET becomes conductive at relatively high output terminal loads with an accompanying decrease in output impedance.

Claim 14

The output drive circuit of claim 10, said FETs being formed in a well of one conductivity with source and drain implants of opposite conductivity, said means connecting the base of the parasitic bipolar transistor for the second FET with its collector-emitter circuit comprising a connection between the second FET source and the well.

Claim 15

The output drive circuit of claim 10, the FETs and their respective current sources being scaled to establish approximately balanced current densities in the two FETs at relatively low output terminal loads.

Claim 16

An output drive circuit, comprising: an integrated circuit semiconductor substrate of a first conductivity type, a device well formed in the substrate of a second conductivity type opposite to the substrate's conductivity type, first and second field effect transistors (FETs) comprising respective spaced pairs of first doped regions in the well providing sources and drains, and respective gates between the source and drain regions, the FETs being characterized by respective parasitic bipolar transistor, an input terminal connected in common to the first and second FETs, a positive voltage bus connected to the drains of the first and second FETs, an output terminal connected to the first FET, and first and second current sources connected to establish current flows through the source-drain current path for the first and second FETs, respectively, the current values of the first and second current sources being scaled relative to the first and second FETs to maintain the soruce voltages of the first and second FETs sufficiently close together during low output terminal loads to inhibit conduction of the first FET's parasitic bipolar transistor, with resulting relatively high input and output impedances and a high voltage swing approaching the positive bus voltage for the first FET, the current sources being small enough in current value to permit the parasitic bipolar transistor for the first FET to become conductive at relatively high output terminal loads with an accompanying decrease in output impedance.

Claim 17

An output drive circuit, comprising: an integrated circuit semiconductor substrate of a first conductivity type, a device well formed in the substrate of a second conductivity type opposite to the substrate's conductivity type, first and second field effect transistors (FETs) comprising respective spaced pairs of first doped regions in the well providing sources and drains, and respective gates between the source and drain regions, the FETs being characterized by respective parasitic bipolar transistor, an input terminal connected in common to the first and second FETs, a positive voltage bus connected to the drains of the first and second FETs, an output terminal connected to the first FET, and first and second current sources connected to establish current flows through the source-drain current path for the first and second FETs, respectively, the current values of the first and second current sources being scaled relative to the first and second FETs to maintain the soruce voltages of the first and second FETs sufficiently close together during low output terminal loads to inhibit conduction of the first FET's parasitic bipolar transistor, with resulting relatively high input and output impedances and a high voltage swing approaching the positive bus voltage for the first FET, the current sources being small enough in current value to permit the parasitic bipolar transistor for the first FET to become conductive at relatively high output terminal loads with an accompanying decrease in output impedance.