Charge pump for providing programming voltage to the word lines in a semiconductor memory array

Claim 1

An apparatus for selectively increasing the voltage on one or more of a plurality of conductive lines having inherent distributed capacitance disposed in a semiconductor circuit including: means disposed on said semiconductor circuit for selecting one or more of said conductive lines; switchable high voltage generating means disposed on said semiconductor circuit for generating a high voltage from a lower voltage power supply connected to said semiconductor circuit, switchable voltage pulse generating means disposed on said semiconductor circuit for generating voltage pulses; means for capacitively coupling voltage pulses from said voltage pulse generating means to a voltage node in said semiconductor circuit, transfer means responsive to said selecting means and connected to said voltage node for transferring increments of charge from said high voltage generating means to the inherent distributed capacitance in selected ones of said conductive lines in response to said voltage pulses, said transfer means including switching means cooperating with said selecting means for blocking substantially all of the flow of current through and transfer of charge from said high voltage generating means to said conductive lines which are unselected, means connected to said high voltage generating means and said voltage pulse generating means for enabling them in response to a write enable signal.

Claim 2

An apparatus for selectively increasing the voltage on one or more of a plurality of conductive lines having inherent distributed capacitance disposed in a semiconductor circuit including: means disposed on said semiconductor circuit for selecting one or more of said conductive lines; switchable high voltage generating means disposed on said semiconductor circuit for generating a high voltage from a lower voltage power supply connected to said semiconductor circuit, switchable voltage pulse generating means disposed on said semiconductor circuit for generating voltage pulses; means for capacitively coupling voltage pulses from said voltage pulse generating means to a voltage node in said semiconductor circuit, transfer means responsive to said selecting means and connected to said voltage node for transferring increments of charge from said high voltage generating means to the inherent distributed capacitance in selected ones of said conductive lines in response to said voltage pulses, said transfer means including switching means cooperating with said selecting means for blocking substantially all of the flow of current through and transfer of charge from said high voltage generating means to said conductive lines which are unselected, means connected to said high voltage generating means and said voltage pulse generating means for enabling them in response to a write enable signal.