US4374430A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor PROM device
Assignee: Fujitsu Ltd
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Filing: 1980-11-26
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Granted: 1983-02-15
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Expires: 2000-11-26
Abstract
Abstract A semiconductor PROM device comprising a plurality of word address decoders, each of the word address decoders having a decoder section and a high potential voltage supplying section including a transistor. The transistor is connected between one of the word lines and a high potential voltage source and is turned on when programming is effected. The semiconductor PROM device further comprises a plurality of gated program signal generators each of which is supplied with a part of input address signals for selecting a block of a plurality of the word address decoders. Each of gated program signals from the gated program signal generators is applied to the gate electrode of the transistor of the word address decoder whose input address signals include part of the input address signals supplied to the gated program signal generator.
Inventors
- 👤 Mitsuo Higuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 11:48
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/08
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
258 words
A semiconductor PROM device operatively connected to receive input address signals, a high potential voltage, and a programming signal, comprising: a plurality of word lines; a plurality of word address decoders organized in blocks and operatively connected to respective of said word lines, each of said word address decoders including: a decoder section for receiving said input address signals and for selecting said respective word line in accordance with said input address signals; and a high potential voltage supplying section, for receiving and providing said high potential voltage, including a first transistor which is connected between a respective one of said word lines and said high potential voltage and which is turned on in dependence upon said programming signal; and a second transistor which is connected between an output terminal of said decoder section and said respective one of said word lines, a plurality of gated program signal generators, operatively connected to respective ones of said blocks of word address decoders, for receiving specified signals of said input address signals and for generating a gated program signal for selecting said respective ones of said blocks of word address decoders, each of said blocks comprising one or more of said word address decoders associated with said specified signals of said input address signals, and said gated program signal corresponding to said programming signal being applied to the gate electrode of said first transistor of said respective word address decoder having input address signals including said specified signals of the input address signals received by said gated program signal generator.
Claim 2
Dependent Claim
258 words
A semiconductor PROM device operatively connected to receive input address signals, a high potential voltage, and a programming signal, comprising: a plurality of word lines; a plurality of word address decoders organized in blocks and operatively connected to respective of said word lines, each of said word address decoders including: a decoder section for receiving said input address signals and for selecting said respective word line in accordance with said input address signals; and a high potential voltage supplying section, for receiving and providing said high potential voltage, including a first transistor which is connected between a respective one of said word lines and said high potential voltage and which is turned on in dependence upon said programming signal; and a second transistor which is connected between an output terminal of said decoder section and said respective one of said word lines, a plurality of gated program signal generators, operatively connected to respective ones of said blocks of word address decoders, for receiving specified signals of said input address signals and for generating a gated program signal for selecting said respective ones of said blocks of word address decoders, each of said blocks comprising one or more of said word address decoders associated with said specified signals of said input address signals, and said gated program signal corresponding to said programming signal being applied to the gate electrode of said first transistor of said respective word address decoder having input address signals including said specified signals of the input address signals received by said gated program signal generator.
Claim 3
Dependent Claim
82 words
A semiconductor PROM device as set forth in claim 1, wherein said semiconductor PROM device further includes: inverter means, operatively connected to respective of said plurality of gated program signal generators, for generating inverted signals of said respective gated program signal, each of said inverted signals being applied to the gate electrode of said second transistor of the respective word address decoder whose input address signals include said specified signals of the input address signals received by said gated program signal generator.
Claim 4
Dependent Claim
83 words
A semiconductor PROM device as set forth in claim 1 or 2, wherein said device has a write mode and a read mode, and wherein each of said gated program signal generators further comprises a decoder circuit having input terminals operatively connected to receive said specified signals of the input address signals associated with said respective block of word address decoders and said program signal having a potential level varying in response to the change between the write mode and the read mode.
Claim 5
Dependent Claim
20 words
A semiconductor PROM device as set forth in claim 3, wherein each of said decoder circuits comprises a NOR gate.
Claim 6
Dependent Claim
43 words
A semiconductor PROM device as set forth in claim 4, wherein said NOR gate comprises a plurality of inverter transistors connected parallel to each other and a load transistor connected in series between said high potential voltage and said plurality of inverter transistors.
Claim 7
Dependent Claim
31 words
A semiconductor PROM device as set forth in claim 5, wherein said load transistor comprises a depletion mode transistor having a gate electrode operatively connected to said plurality of inverter transistors.
References Cited (Backward Citations)
US4327424A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-02-14 | 1986-08-16 | 1987-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-02-14 | 1990-08-16 | 1991-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-02-14 | 1994-08-16 | 1995-02-15 | $7700.00 | Window Closed / Lapsed |