US4673628A — Image forming member for electrophotography

Claim 1

Independent Claim 80 words

An image-forming member for electrophotography comprising a substrate, a photoconductive layer, said photoconductive layer comprising an amorphous inorganic semiconductor layer having effective dark resistance for forming electrophotographic images overlying said substrate and a hydrogenated amorphous silicon layer containing from 1 to 40 atomic percent of hydrogen laminated to said semiconductor layer whereby a heterojunction is provided in the contact portion between the hydrogenated amorphous silicon layer and the inorganic semiconductor layer, and a charge transportation layer on said photoconductive layer.

Claim 2

Dependent Claim 80 words

An image-forming member for electrophotography comprising a substrate, a photoconductive layer, said photoconductive layer comprising an amorphous inorganic semiconductor layer having effective dark resistance for forming electrophotographic images overlying said substrate and a hydrogenated amorphous silicon layer containing from 1 to 40 atomic percent of hydrogen laminated to said semiconductor layer whereby a heterojunction is provided in the contact portion between the hydrogenated amorphous silicon layer and the inorganic semiconductor layer, and a charge transportation layer on said photoconductive layer.

Claim 3

Dependent Claim 72 words

An image-forming member for electrophotography comprising a substrate and a photoconductive layer, said photoconductive layer comprising (1) a hydrogenated amorphous silicon layer containing from 1 to 40 atomic percent of hydrogen laminated to an amorphous inorganic semiconductor layer having effective dark resistance for forming electrophotographic images whereby a heterojunction portion is provided at the interface of the photoconductive layer laminate and (2) a charge transportation layer composed of an organic photoconductive material.

Claim 4

Dependent Claim 72 words

An image-forming member for electrophotography comprising a substrate and a photoconductive layer, said photoconductive layer comprising (1) a hydrogenated amorphous silicon layer containing from 1 to 40 atomic percent of hydrogen laminated to an amorphous inorganic semiconductor layer having effective dark resistance for forming electrophotographic images whereby a heterojunction portion is provided at the interface of the photoconductive layer laminate and (2) a charge transportation layer composed of an organic photoconductive material.

Claim 5

Dependent Claim 84 words

An image-forming member for electrophotography comprising a substrate, a photoconductive layer, said photoconductive layer comprising an amorphous inorganic semiconductor layer having effective dark resistance for forming electrophotographic images overlying said substrate and a hydrogenated amorphous silicon layer containing from 1 to 40 atomic percent of hydrogen laminated to said semiconductor layer whereby a heterojunction is provided in the contact portion between the hydrogenated amorphous silicon layer and the inorganic semiconductor layer and a layer composed of an organic photoconductive material on said photoconductive layer.

Claim 6

Dependent Claim 84 words

An image-forming member for electrophotography comprising a substrate, a photoconductive layer, said photoconductive layer comprising an amorphous inorganic semiconductor layer having effective dark resistance for forming electrophotographic images overlying said substrate and a hydrogenated amorphous silicon layer containing from 1 to 40 atomic percent of hydrogen laminated to said semiconductor layer whereby a heterojunction is provided in the contact portion between the hydrogenated amorphous silicon layer and the inorganic semiconductor layer and a layer composed of an organic photoconductive material on said photoconductive layer.

Claim 7

Dependent Claim 59 words

An image-forming member for electrophotography comprising a substrate, a layer having photoconductive properties, said layer comprising a hydrogenated amorphous silicon layer containing either oxygen or carbon having effective dark resistance for forming electrophotographic images and a hydrogenated amorphous silicon layer, the former layer being laminated to the latter layer and a chargetransporting layer on said layer having photoconductive properties.

Claim 8

Dependent Claim 59 words

An image-forming member for electrophotography comprising a substrate, a layer having photoconductive properties, said layer comprising a hydrogenated amorphous silicon layer containing either oxygen or carbon having effective dark resistance for forming electrophotographic images and a hydrogenated amorphous silicon layer, the former layer being laminated to the latter layer and a chargetransporting layer on said layer having photoconductive properties.

Claim 9

Dependent Claim 64 words

An image-forming member for electrophotography comprising a substrate, a layer having photoconductive properties, said layer comprising a hydrogenated amorphous silicon layer containing either oxygen or carbon having effective dark resistance for forming electrophotographic images and a hydrogenated amorphous silicon layer, the former layer being laminated to the latter layer and a layer composed of an organic photoconductive material on said layer having photoconductive properties.

Claim 10

Dependent Claim 64 words

An image-forming member for electrophotography comprising a substrate, a layer having photoconductive properties, said layer comprising a hydrogenated amorphous silicon layer containing either oxygen or carbon having effective dark resistance for forming electrophotographic images and a hydrogenated amorphous silicon layer, the former layer being laminated to the latter layer and a layer composed of an organic photoconductive material on said layer having photoconductive properties.

Claim 11

Dependent Claim 69 words

An image-forming member for electrophotography comprising a substrate, a hydrogenated amorphous silicon layer containing from 1 to 40 atomic percent of hydrogen, an amorphous inorganic semiconductor layer having effective dark resistance for forming electrophotographic images; said hydrogenated amorphous silicon layer being laminated to said amorphous inorganic semicondutor layer whereby a heterojunction is provided in the contact portion between the former layer and the latter layer and a charge-transportation layer.

Claim 12

Dependent Claim 69 words

An image-forming member for electrophotography comprising a substrate, a hydrogenated amorphous silicon layer containing from 1 to 40 atomic percent of hydrogen, an amorphous inorganic semiconductor layer having effective dark resistance for forming electrophotographic images; said hydrogenated amorphous silicon layer being laminated to said amorphous inorganic semicondutor layer whereby a heterojunction is provided in the contact portion between the former layer and the latter layer and a charge-transportation layer.

Claim 13

Dependent Claim 75 words

An image-forming member for electrophotography comprising a substrate, a hydrogenated amorphous silicon layer containing from 1 to 40 atomic percent of hydrogen and an amorphous inorganic semiconductor layer having effective dark resistance for forming electrophotographic images; said hydrogenated amorphous silicon layer being laminated to said amorphous inorganic semiconductor layer whereby a heterojunction is provided in the contact portion between the former layer and the latter layer and a layer composed of an organic photoconductive material.

Claim 14

Dependent Claim 75 words

An image-forming member for electrophotography comprising a substrate, a hydrogenated amorphous silicon layer containing from 1 to 40 atomic percent of hydrogen and an amorphous inorganic semiconductor layer having effective dark resistance for forming electrophotographic images; said hydrogenated amorphous silicon layer being laminated to said amorphous inorganic semiconductor layer whereby a heterojunction is provided in the contact portion between the former layer and the latter layer and a layer composed of an organic photoconductive material.

Claim 15

Dependent Claim 31 words

An image-forming member for electrophotography according to any one of claims 1 to 7 in which said amorphous inorganic semiconductor layer has a dark resistance of 10 11 ohm·cm or above.

Claim 16

Dependent Claim 42 words

An image-forming member for electrophotography according to any one of claims 1 to 7 in which said amorphous inorganic semiconductor layer is composed of amorphous inorganic semiconductor having band gap ε g larger than band gap E g of hydrogenated amorphous silicon.

Claim 17

Dependent Claim 25 words

An image-forming member for electrophotography according to any one of claims 1 to 7 in which said hydrogenated amorphous silicon layer has a p-n homojunction.

Claim 18

Dependent Claim 24 words

An image-forming member for electrophotography according to any one of claims 1 to 5 further comprising a surface covering layer on said photoconductive layer.

Claim 19

Dependent Claim 21 words

An image-forming member for electrophotography according to any one of claims 1 to 7 in which said heterojunction is p-n heterojunction.

Claim 20

Dependent Claim 43 words

An image-forming member for electrophotography according to any one of claims 1 to 7 in which said hydrogenated amorphous silicon layer is of a p-type and said amorphous inorganic semiconductor layer is of an n-type, said heterojunction being formed in the contact portion.

Claim 21

Dependent Claim 43 words

An image-forming member for electrophotography according to any one of claims 1 to 7 in which said hydrogenated amorphous silicon layer is of an n-type and said amorphous inorganic semiconductor layer is of a p-type, said heterojunction being formed in the contact portion.

Claim 22

Dependent Claim 27 words

An image-forming member for electrophotography according to any one of claims 1 to 7 in which said amorphous inorganic semiconductor layer is composed of a chalcogen element.

Claim 23

Dependent Claim 27 words

An image-forming member for electrophotography according to any one of claims 1 to 7 in which said amorphous inorganic semiconductor layer is composed of a chalcogen compound.

Claim 24

Dependent Claim 31 words

An image-forming member for electrophotography according to any one of claims 1 to 7 in which said amorphous inorganic semiconductor layer is composed of silicon oxide of the formula: SiO.sub.x (0<x<2)

Claim 25

Dependent Claim 35 words

An image-forming member for electrophotography according to any one of claims 1 to 7 in which said amorphous inorganic semiconductor layer is composed of hydrogenated amorphous silicon containing 0 or C in a small amount.

Claim 26

Dependent Claim 27 words

An image-forming member for electrophotography according to claim 16 in which said chalcogen compound is composed of at least two members selected from Se, Te and S.

Claim 27

Dependent Claim 20 words

An image-forming member for electrophotography according to claim 16 in which said chalcogen compound contains chalcogen element and other element.

Claim 28

Dependent Claim 50 words

An image-forming member for electrophotography according to any one of claims 1 to 7 in which said amorphous inorganic semiconductor layer is composed of amorphous inorganic semiconductor having band gap ε g larger than band gap Eg of hydrogenated amorphous silicon, and the band gap ε g is 2.1±0.4 eV.

Claim 29

Dependent Claim 26 words

An image-forming member for electrophotography according to any one of claims 1 to 7 in which said hydrogenated amorphous silicon layer is 0.3-50 microns in thickness.

Claim 30

Dependent Claim 26 words

An image-forming member for electrophotography according to any one of claims 1 to 7 in which said amorphous inorganic semiconductor layer is 0.1-70 microns in thickness.

Claim 31

Dependent Claim 26 words

An image-forming member for electrophotography according to any one of claims 1 to 5 further comprising a barrier layer between said substrate and said photoconductive layer.

Claim 32

Dependent Claim 82 words

An image-forming member for electrophotography comprising a substrate and a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous silicon layer containing from 1 to 40 atomic percent of hydrogen laminated to an amorphous inorganic semiconductor layer composed of an amorphous inorganic semiconductor having band gap ε g larger than band gap E g of said hydrogenated amorphous silicon and having effective dark resistance for forming electrophotographic images whereby a heterojunction portion is provided at the interface of the photoconductive layer laminate.

Claim 33

Dependent Claim 82 words

An image-forming member for electrophotography comprising a substrate and a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous silicon layer containing from 1 to 40 atomic percent of hydrogen laminated to an amorphous inorganic semiconductor layer composed of an amorphous inorganic semiconductor having band gap ε g larger than band gap E g of said hydrogenated amorphous silicon and having effective dark resistance for forming electrophotographic images whereby a heterojunction portion is provided at the interface of the photoconductive layer laminate.

Claim 34

Dependent Claim 26 words

An image-forming member for electrophotography according to claim 25, in which said amorphous inorganic semiconductor layer has a dark resistance of 10 11 ohm·cm or above.

Claim 35

Dependent Claim 20 words

An image-forming member for electrophotography according to claim 25, in which said hydrogenated amorphous silicon layer has a p-n homojunction.

Claim 36

Dependent Claim 19 words

An image-forming member for electrophotography according to claim 25, further comprising a surface covering layer on said photoconductive layer.

Claim 37

Dependent Claim 16 words

An image-forming member for electrophotography according to claim 25, in which said heterojunction is p-n heterojunction.

Claim 38

Dependent Claim 36 words

An image-forming member for electrophotography according to claim 25, in which said hydrogenated amorphous silicon layer is of p-type and said amorphous inorganic semiconductor layer is of n-type, said heterojunction being formed in the contact portion.

Claim 39

Dependent Claim 36 words

An image-forming member for electrophotography according to claim 25, in which said hydrogenated amorphous silicon layer is of n-type and said amorphous inorganic semiconductor layer is of p-type, said heterojunction being formed in the contact portion.

Claim 40

Dependent Claim 21 words

An image-forming member for electrophotography according to claim 25, in which said amorphous inorganic semiconductor layer is composed of chalcogen element.

Claim 41

Dependent Claim 22 words

An image-forming member for electrophotography according to claim 25, in which said amorphous inorganic semiconductor layer is composed of a chalcogen compound.

Claim 42

Dependent Claim 26 words

An image-forming member for electrophotography according to claim 25, in which said amorphous inorganic semiconductor layer is composed of silicon oxide of the formula: SiO.sub.x (0<x<2)

Claim 43

Dependent Claim 30 words

An image-forming member for electrophotography according to claim 25, in which said amorphous inorganic semiconductor layer is composed of hydrogenated amorphous silicon containing O or C in a small amount.

Claim 44

Dependent Claim 27 words

An image-forming member for electrophotography according to claim 33, in which said chalcogen compound is composed of at least two members selected from Se, Te and S.

Claim 45

Dependent Claim 20 words

An image-forming member for electrophotography according to claim 33, in which said chalcogen compound contains chalcogen element and other element.

Claim 46

Dependent Claim 46 words

An image-forming member for electrophotography according to claim 25, in which said amorphous inorganic semiconductor layer is composed of amorphous inorganic semiconductor having band gap ε g layer than band gap E g of hydrogenated amorphous silicon, and the band gap ε g is 2.1±0.4 eV.

Claim 47

Dependent Claim 22 words

An image-forming member for electrophotography according to claim 25, in which said hydrogenated amorphous silicon layer is 0.3-50 microns in the thickness.

Claim 48

Dependent Claim 22 words

An image-forming member for electrophotography according to claim 25, in which said amorphous inorganic semiconductor layer is 0.1-70 microns in the thickness.

Claim 49

Dependent Claim 21 words

An image-forming member for electrophotography according to claim 25, further comprising a barrier layer between said substrate and said photoconductive layer.

Claim 50

Dependent Claim 102 words

An image-forming member for electrophotography comprising a substrate and a photoconductive layer, said photoconductive layer comprising an amorphous inorganic semiconductor layer having effective dark resistance for forming electrophotographic images overlying said substrate and a hydrogenated amorphous silicon layer containing from 1 to 40 atomic percent of hydrogen laminated to said semiconductor layer wherein said amorphous inorganic semiconductor layer is composed of an amorphous inorganic semiconductor having band gap ε g larger than band gap E g of said hydrogenated amorphous silicon and whereby a heterojunction is provided in the contact portion between the hydrogenated amorphous silicon layer and the inorganic semiconductor layer.

Claim 51

Dependent Claim 102 words

An image-forming member for electrophotography comprising a substrate and a photoconductive layer, said photoconductive layer comprising an amorphous inorganic semiconductor layer having effective dark resistance for forming electrophotographic images overlying said substrate and a hydrogenated amorphous silicon layer containing from 1 to 40 atomic percent of hydrogen laminated to said semiconductor layer wherein said amorphous inorganic semiconductor layer is composed of an amorphous inorganic semiconductor having band gap ε g larger than band gap E g of said hydrogenated amorphous silicon and whereby a heterojunction is provided in the contact portion between the hydrogenated amorphous silicon layer and the inorganic semiconductor layer.

Claim 52

Dependent Claim 16 words

An image-forming member for electrophotography according to claim 42, in which said heterojunction is p-n heterojunction.

Claim 53

Dependent Claim 28 words

An image-forming member for electrophotography according to claim 42, in which said amorphous inorganic semiconductor layer is of p-type and said hydrogenated amorphous silicon layer is of n-type.

Claim 54

Dependent Claim 28 words

An image-forming member for electrophotography according to claim 42, in which said amorphous inorganic semiconductor layer is of n-tupe and said hydrogenated amorphous silicon layer is of p-type.

Claim 55

Dependent Claim 22 words

An image-forming member for electrophotography according to claim 25, in which said hydrogenated amorphous silicon layer is doped with a p-type impurity.

Claim 56

Dependent Claim 22 words

An image-forming member for electrophotography according to claim 25, in which said hydrogenated amorphous silicon layer is doped with a n-type impurity.

Claim 57

Dependent Claim 26 words

An image-forming member for electrophotography according to claim 25, in which said amorphous inorganic semiconductor layer is doped with a small amount of C or O.

Claim 58

Dependent Claim 30 words

An image-forming member for electrophotography according to claim 48, in which the doping amount of each of said C and O is 10 2 and 10 5 parts per million.

Claim 59

Dependent Claim 22 words

An image-forming member for electrophotography according to claim 42, in which said hydrogenated amorphous silicon layer is doped with a p-type impurity.

Claim 60

Dependent Claim 22 words

An image-forming member for electrophotography according to claim 42, in which said hydrogenated amorphous silicon layer is doped with a n-type impurity.

Claim 61

Dependent Claim 26 words

An image-forming member for electrophotography according to claim 42, in which said amorphous inorganic semiconductor layer is doped with a small amount of C or O.

Claim 62

Dependent Claim 30 words

An image-forming member for electrophotography according to claim 52, in which the doping amount of each of said C and O is 10 2 to 10 5 parts per million.

Claim 63

Dependent Claim 80 words

An image-forming member for electrophotography comprising a substrate and a layer having photoconductive properties, said layer comprising a hydrogenated amorphous silicon layer containing either oxygen or carbon having effective dark resistance for forming electrophotographic images and a hydrogenated amorphous silicon layer, the former layer being laminated to the latter layer, wherein the hydrogenated amorphous silicon layer containing either oxygen or cargon has a band gap ε g larger than the bend gap E g of said hydrogenated amorphous silicon layer.

Claim 64

Dependent Claim 80 words

An image-forming member for electrophotography comprising a substrate and a layer having photoconductive properties, said layer comprising a hydrogenated amorphous silicon layer containing either oxygen or carbon having effective dark resistance for forming electrophotographic images and a hydrogenated amorphous silicon layer, the former layer being laminated to the latter layer, wherein the hydrogenated amorphous silicon layer containing either oxygen or cargon has a band gap ε g larger than the bend gap E g of said hydrogenated amorphous silicon layer.

Claim 65

Dependent Claim 22 words

An image-forming member for electrophotography according to claim 54, in which said hydrogenated amorphous silicon layer is doped with a p-type impurity.

Claim 66

Dependent Claim 22 words

An image-forming member for electrophotography according to claim 54, in which said hydrogenated amorphous silicon layer is doped with a n-type impurity.

Claim 67

Dependent Claim 22 words

An image-forming member for electrophotography according to claim 1, in which said charge transportation layer is composed of an organic semiconductor material.

Claim 68

Dependent Claim 192 words

In an electrophotographic member comprising at least a predetermined supporter having a cnductive surface and an amorphous silicon layer which is electrically in contact with said conductive surface and which contains hydrogen and silicon as indispensable constituent elements thereof, the improvement comprising an amorphous silicon layer in which the silicon amounts to be at least 60 atomic % and the hydrogen amounts to at least 1 atomic % and, at most, 40 atomic %, said amorphous layer comprising a first region and a second region, said first region being at least 100 nm thick, extending inwardly from an outer surface of said amorphous silicon layer and being made of amorphous silicon which has an optical forbidden band gap of at least 1.7 eV and a resistivity of at least 10 11 Ω.cm, and said second region being located at least 100 nm from said surface of said amorphous layer, having a thickness of at least 300 nm, and being made of amorphous silicon which has an optical forbidden gap that is smaller than than of said first region at the surface of the amorphous silicon and that is at least 1.1 eV.

Claim 69

Dependent Claim 192 words

In an electrophotographic member comprising at least a predetermined supporter having a cnductive surface and an amorphous silicon layer which is electrically in contact with said conductive surface and which contains hydrogen and silicon as indispensable constituent elements thereof, the improvement comprising an amorphous silicon layer in which the silicon amounts to be at least 60 atomic % and the hydrogen amounts to at least 1 atomic % and, at most, 40 atomic %, said amorphous layer comprising a first region and a second region, said first region being at least 100 nm thick, extending inwardly from an outer surface of said amorphous silicon layer and being made of amorphous silicon which has an optical forbidden band gap of at least 1.7 eV and a resistivity of at least 10 11 Ω.cm, and said second region being located at least 100 nm from said surface of said amorphous layer, having a thickness of at least 300 nm, and being made of amorphous silicon which has an optical forbidden gap that is smaller than than of said first region at the surface of the amorphous silicon and that is at least 1.1 eV.

Claim 70

Dependent Claim 24 words

An electrophotographic member according to claim 58, wherein said amorphous silicon layer is formed by a reactive sputtering process in an atmosphere containing hydrogen.

Claim 71

Dependent Claim 58 words

An electrophotogaphic member according to claim 58, wherein said amorphous silicon layer has a third region on a side opposite to said surface side formed by said first region, said third region being made of amorphous silicon which has an optical forbidden band gap of at least 1.7 eV and a resistivity of at least 10 11 Ω.cm.

Claim 72

Dependent Claim 30 words

An electrophotographic member according to claim 58, wherein said amorphous silicon layer further contains at least carbon which is substituted for silicon in an amount up to 9 atomic %.

Claim 73

Dependent Claim 21 words

An electrophotographic member according to claim 58, wherein said member further comprises a conductor in contact with said amorphous silicon layer.

Claim 74

Dependent Claim 28 words

An electrophotographic member according to claim 58, wherein said supporter includes a substrate which is a conductive material and which is in contact with said amorphous silicon layer.

Claim 75

Dependent Claim 30 words

An electrophotographic member according to claim 58, wherein said supporter comprises an insulating substrate and a conductive electrode formed on said substrate and in contact with said amorphous silicon layer.

Claim 76

Dependent Claim 35 words

An electrophotographic member according to claim 58, further comprising a layer on the side of the supporter in electrical contact with the amorphous silicon for suppressing the injection of excess carriers from the supporter side.

Claim 77

Dependent Claim 26 words

An electrophotographic member according to claim 58, further comprising a layer for suppressing the injection of charges from the surface side of said amorphous silicon layer.

Claim 78

Dependent Claim 37 words

An electrophotographic member according to claim 65 wherein said suppressing layer comprises a material which is SiO, SiO 2 , Al 2 O 3 , As 2 Se 3 , As 2 S 3 or polyvinyl carbazole.

Claim 79

Dependent Claim 37 words

An electrophotographic member according to claim 66 wherein said suppressing layer comprises a material which is SiO, SiO 2 , Al 2 O 3 , As 2 Se 3 , As 2 S 3 or polyvinyl carbazole.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1990-06-15	1990-12-15	1991-06-16	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1994-06-15	1994-12-15	1995-06-16	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1998-06-15	1998-12-15	1999-06-16	$7700.00	Window Closed / Lapsed

Image forming member for electrophotography

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