Patent US4673443A successfully refreshed from Google Patents.
US4673443A
Expired / Lapsed
US
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Continuous ionizer for semiconductor manufacturing processes
Assignee: NXP USA Inc
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Filing: 1985-03-18
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Granted: 1987-06-16
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Expires: 2005-03-18
Abstract
Abstract A continuous ionizer adapted to introduce selected ions into a continually flowing stream of liquid. To ensure that a maximum concentration of ions is incorporated, the continuous ionizer is configured so that turbulent and intimate mixing of the ionizing gas and liquid to be ionized occurs. The flow of ionizing gas is regulated by a liquid level sensor to prevent a gas/liquid mixture from proceeding downstream from the ionizer. The apparatus and method of this invention are particularly suited to situations where deionized water is used in a process which causes undesired static electricity discharges, and clean, ion-possessing water is preferred, such as semiconductor processing.
Inventors
- 👤 Allan M. Fetty
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:37
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0406; H10P72/0411; H10P72/0414; H10P72/0412; Y; Y10; Y10S; Y10S261/00; Y10S261/07
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
114 words
An improved method for scrubbing a semiconductor mask having a metal pattern thereon with a stream of ionized liquid comprising spraying the liquid through air onto the mask, the improvements comprising introducing ions to a continuous stream of deionized liquid for use in scrubbing the semiconductor mask by passing a continuous stream of deionized liquid through a continuous ionizer wherein: deionized liquid enters said ionizer through a liquid inlet; the liquid subsequently travels along a convoluted liquid pathway; an ionizing gas is bubbled through the liquid travelling along the convoluted liquid pathway to react with the liquid and form soluble ions; and the liquid containing soluble ions leaves the ionizer through a liquid outlet.
Claim 2
Dependent Claim
114 words
An improved method for scrubbing a semiconductor mask having a metal pattern thereon with a stream of ionized liquid comprising spraying the liquid through air onto the mask, the improvements comprising introducing ions to a continuous stream of deionized liquid for use in scrubbing the semiconductor mask by passing a continuous stream of deionized liquid through a continuous ionizer wherein: deionized liquid enters said ionizer through a liquid inlet; the liquid subsequently travels along a convoluted liquid pathway; an ionizing gas is bubbled through the liquid travelling along the convoluted liquid pathway to react with the liquid and form soluble ions; and the liquid containing soluble ions leaves the ionizer through a liquid outlet.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein the deionized liquid is deionized water.
Claim 4
Dependent Claim
12 words
The method of claim 1 wherein the ionizing gas is carbon dioxide.
Claim 5
Dependent Claim
19 words
The method of claim 1 wherein the deionized liquid is deionized water and the ionizing, gas is carbon dioxide.
Claim 6
Dependent Claim
36 words
The method of claim 1 wherein the flow of ionizing gas is regulated by a liquid level sensor which temporarily shuts off the ionizing gas flow when the liquid level falls below a predetermined liquid level.
Claim 7
Dependent Claim
137 words
An improved method for scrubbing semiconductor masks having a metal pattern thereon comprising the steps of: removing the ions from a continuous stream of liquid to be used in scrubbing the masks; and spraying the liquid through air onto the mask; wherein the improvement comprises introducing selected ions into the continuous stream of deionized liquid by the steps of: introducing the continuous stream of deionized liquid into a continuous ionizer through a liquid inlet; continuously passing the liquid along a convoluted liquid pathway; bubbling an ionizing gas is through the liquid passing along the convoluted liquid pathway to react with the liquid and dissolve selected soluble ions into the liquid; and allowing the liquid containing selected soluble ions to leave the ionizer through a liquid outlet to subsequently be sprayed through the air onto the semiconductor mask.
Claim 8
Dependent Claim
137 words
An improved method for scrubbing semiconductor masks having a metal pattern thereon comprising the steps of: removing the ions from a continuous stream of liquid to be used in scrubbing the masks; and spraying the liquid through air onto the mask; wherein the improvement comprises introducing selected ions into the continuous stream of deionized liquid by the steps of: introducing the continuous stream of deionized liquid into a continuous ionizer through a liquid inlet; continuously passing the liquid along a convoluted liquid pathway; bubbling an ionizing gas is through the liquid passing along the convoluted liquid pathway to react with the liquid and dissolve selected soluble ions into the liquid; and allowing the liquid containing selected soluble ions to leave the ionizer through a liquid outlet to subsequently be sprayed through the air onto the semiconductor mask.
Claim 9
Dependent Claim
13 words
The improved method of claim 6 wherein the deionized liquid is deionized water.
Claim 10
Dependent Claim
13 words
The improved method of claim 6 wherein the ionizing gas is carbon monoxide.
Claim 11
Dependent Claim
20 words
The improved method of claim 6 wherein the deionized liquid is deionized water and the ionizing gas is carbon dioxide.
Claim 12
Dependent Claim
37 words
The improved method of claim 6 wherein the flow of ionizing gas is regulated by a liquid level sensor which temporarily shuts off the ionizing gas flow when the liquid level falls below a predetermined liquid level.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-06-15 | 1990-12-15 | 1991-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-06-15 | 1994-12-15 | 1995-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-06-15 | 1998-12-15 | 1999-06-16 | $7700.00 | Window Closed / Lapsed |