Patent US4672245A successfully refreshed from Google Patents.
← Back to Patent Explorer
US4672245A Expired / Lapsed US ⏱️ 0.0 years remaining

High frequency diverse semiconductor switch

Assignee: Mitsubishi Electric Corp
•
Filing: 1985-08-09
•
Granted: 1987-06-09
•
Expires: 2005-08-09
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract Provided is a power semiconductor device operable to be switched at high frequencies. The semiconductor device according to the present invention is applied to a three-terminal BIMOS power semiconductor device in which a MOS-FET (2) is connected in parallel with a bipolar transistor (3) while the gate of the MOS-FET (2) is connected with the base of the bipolar transistor (3) through a reference-voltage diode (6) and a fast switching diode (7) so that the operation of the semiconductor device can be controlled by one driving circuit (1).

Inventors

  • 👤 Gourab Majumdar
  • 👤 Satoshi Mori

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 09:05
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/56; H03K17/567; H03K17/04; H03K17/042; H03K17/0422

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 152 words
A semiconductor device operable to be switched at high frequency, comprising, a field-effect transistor (2) having first and second electrodes and a control electrode, a bipolar transistor (3) having third, fourth and fifth electrodes, the fourth electrode being connected to said first electrode, and the fifth electrode being connected to said second electrode, at least a reference-voltage diode being connected in a reverse direction and at least a first diode being connected in a forward direction in view of said control electrode in a series manner in said order between said control electrode and said third electrode, a second diode being connected in parallel with a series-connected body of said reference-voltage diode and said first diode in said reverse direction in view of said control electrode, and a single driving circuit for supplying a switching signal provided between said control electrode and a junction between said second electrode and said fifth electrode.
Claim 2
Dependent Claim 152 words
A semiconductor device operable to be switched at high frequency, comprising, a field-effect transistor (2) having first and second electrodes and a control electrode, a bipolar transistor (3) having third, fourth and fifth electrodes, the fourth electrode being connected to said first electrode, and the fifth electrode being connected to said second electrode, at least a reference-voltage diode being connected in a reverse direction and at least a first diode being connected in a forward direction in view of said control electrode in a series manner in said order between said control electrode and said third electrode, a second diode being connected in parallel with a series-connected body of said reference-voltage diode and said first diode in said reverse direction in view of said control electrode, and a single driving circuit for supplying a switching signal provided between said control electrode and a junction between said second electrode and said fifth electrode.
Claim 3
Dependent Claim 45 words
A semiconductor device in accordance with claim 1, wherein said first electrode is a drain terminal, said second electrode is a source terminal, said third electrode is a base electrode, said fourth electrode is a collector electrode and said fifth electrode is an emitter electrode.
Claim 4
Dependent Claim 16 words
A semiconductor device in accordance with claim 1, wherein said bipolar transistor is an npn-type transistor.
Claim 5
Dependent Claim 38 words
A semiconductor device in accordance with claim 1 further including a third diode, said fourth electrode being connected with the cathode of said third diode, and said fifth electrode being connected with the anode of said third diode.

References Cited (Backward Citations)

DE1144766B Cited
US3417260A Cited
GB1140667A Cited
DE3030485A1 Cited
DE3044842A1 Cited
US4604535A Cited
US4551643A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-06-08 1990-12-08 1991-06-09 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-06-08 1994-12-08 1995-06-09 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-06-08 1998-12-08 1999-06-09 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag