US4671845A
Expired / Lapsed
US
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Method for producing high quality germanium-germanium nitride interfaces for germanium semiconductors and device produced thereby
Assignee: United States Department of the Navy
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Filing: 1985-03-22
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Granted: 1987-06-09
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Expires: 2005-03-22
Abstract
Abstract The present invention relates to the production of a stable insulator of a germanium and a device produced thereby. A germanium substrate is provided with a layer of silicon nitride deposited on one of the outer surfaces. Ionized nitrogen is implanted by an ion beam into the silicon nitride layer. An electric field is applied across the substrate and layer. In one embodiment the substrate and layer are annealed while maintaining the electric field, the electric field is removed, and a second annealing step grows the germanium nitride insulator layer subcutaneously. In another embodiment the subcutaneous germanium nitride insulator layer is grown during a single annealing step by continued application of the electric field to the substrate and the layer.
Inventors
- 👤 Max N. Yoder
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 00:18
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/63; H10P14/6302; H10P14/6322; Y; Y10; Y10S; Y10S148/00; Y10S148/003; Y10S148/024; Y10S148/045; Y10S148/083
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
139 words
A method of producing a germanium semiconductor device comprising the steps of: providing a germanium (Ge) substrate having a layer of silicon nitride (Si 3 N 4 ) deposited onto one of the outer surfaces, implanting nitrogen ions into the silicon nitride layer, applying an electric field across the substrate and the layer, the layer being applied a negative polarity, the substrate being applied a positive polarity, first annealing of the substrate and the layer while maintaining the electric field, said annealing and said electric feed in combination causing the pyrolysis of any GeO and gettering the nitrogen ions to the vicinity of the Ge/Si 3 N 4 interface, removing of the electric field, and second annealing of the device at temperatures sufficient for growing a subcutaneous Ge 3 N 4 film at the Ge/Si 3 N 4 interface.
Claim 2
Independent Claim
139 words
A method of producing a germanium semiconductor device comprising the steps of: providing a germanium (Ge) substrate having a layer of silicon nitride (Si 3 N 4 ) deposited onto one of the outer surfaces, implanting nitrogen ions into the silicon nitride layer, applying an electric field across the substrate and the layer, the layer being applied a negative polarity, the substrate being applied a positive polarity, first annealing of the substrate and the layer while maintaining the electric field, said annealing and said electric feed in combination causing the pyrolysis of any GeO and gettering the nitrogen ions to the vicinity of the Ge/Si 3 N 4 interface, removing of the electric field, and second annealing of the device at temperatures sufficient for growing a subcutaneous Ge 3 N 4 film at the Ge/Si 3 N 4 interface.
Claim 3
Dependent Claim
21 words
The method of claim 1 further comprising the step of removal of at least a portion of the silicon nitride layer.
Claim 4
Independent Claim
97 words
A method of producing a germanium semiconductor comprising the steps of: providing a germanium (Ge) substrate having a layer of silicon nitride (Si 3 N 4 ) deposited onto one of the outer surfaces, implanting nitrogen ions onto the silicon nitride layer, applying an electric field across the substrate and the layer, the layer being applied a negative polarity, the substrate being applied a positive polarity, and annealing the substrate and layer at a sufficient temperature while maintaining the electric field to grow a subcutaneous Ge 3 N 4 film at the Ge/Si 3 N 4 interface.
Claim 5
Independent Claim
97 words
A method of producing a germanium semiconductor comprising the steps of: providing a germanium (Ge) substrate having a layer of silicon nitride (Si 3 N 4 ) deposited onto one of the outer surfaces, implanting nitrogen ions onto the silicon nitride layer, applying an electric field across the substrate and the layer, the layer being applied a negative polarity, the substrate being applied a positive polarity, and annealing the substrate and layer at a sufficient temperature while maintaining the electric field to grow a subcutaneous Ge 3 N 4 film at the Ge/Si 3 N 4 interface.
Claim 6
Dependent Claim
21 words
The method of claim 3 further comprising the step of removal of at least a portion of the silicon nitride layer.
Claim 7
Independent Claim
103 words
A method for producing a germanium semiconductor device comprising the steps of: providing a germanium substrate having a layer of an encapsulant disposed on an outer surface of the substrate, and subcutaneously producing a layer of Ge 3 N 4 insulator onto the outer surface of the substrate through the encapsulant by nitrogen ion beam implantation, application of an electric field, and annealing of the substrate and the layer for a sufficient time and at a sufficient temperature to pyrolize any GeO and while maintaining said electric field to getter all nitrogen ions into the vicinity of the outer surface of the substrate.
Claim 8
Independent Claim
103 words
A method for producing a germanium semiconductor device comprising the steps of: providing a germanium substrate having a layer of an encapsulant disposed on an outer surface of the substrate, and subcutaneously producing a layer of Ge 3 N 4 insulator onto the outer surface of the substrate through the encapsulant by nitrogen ion beam implantation, application of an electric field, and annealing of the substrate and the layer for a sufficient time and at a sufficient temperature to pyrolize any GeO and while maintaining said electric field to getter all nitrogen ions into the vicinity of the outer surface of the substrate.
Claim 9
Dependent Claim
11 words
The method of claim 5 wherein the encapsulant is silicon nitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-06-08 | 1990-12-08 | 1991-06-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-06-08 | 1994-12-08 | 1995-06-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-06-08 | 1998-12-08 | 1999-06-09 | $7700.00 | Window Closed / Lapsed |