Patent US4670293A successfully refreshed from Google Patents.
US4670293A
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Method of making semiconductor film
Assignee: Sanyo Electric Co Ltd
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Filing: 1986-08-22
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Granted: 1987-06-02
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Expires: 2006-08-22
Abstract
Abstract A method of making a semiconductor film on a substrate having a non-flat surface, by placing the substrate in a reaction chamber including at least a pair of discharge electrodes, an inlet of a reaction gas for producing a desired semiconductor film, and an outlet for reduced pressure, and performing a discharge in the presence of said reacrion gas for producing said semiconductor film, while arranging said non-flat surface of said substrate outside a plasma region formed between said discharge electrodes and further locating said non-flat surface substantially in a vertical direction with respect to electrode surfaces of said discharge electrodes, thereby semiconductor film being directly and uniformly deposited on said non-flat surface of said substrate, which is of worth in the production of, e.g., roofing tile-shaped photovoltaic devices.
Inventors
- 👤 Masaru Yamano
- 👤 Yukinori Kuwano
- 👤 Shoichi Nakano
- 👤 Tsugufumi Matsuoka
- 👤 Souichi Sakai
- 👤 Hirosato Yagi
- 👤 Nobuhiro Okuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 08:45
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H02; H02S; H02S20/00; H02S20/20; H02S20/22; H02S20/23; H02S20/25; H10F19/00; H10F19/30; H10F19/31; H10F19/33; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3208; H10P14/3211; H10P14/3212; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3411; H10P14/3412; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y02; Y02B; Y02B10/00; Y02B10/10; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S136/00; Y10S136/291
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
154 words
A method of forming a semiconductor film on a substrate, consisting essentially of: placing a substrate having a deposition surface in a reaction chamber having therein at least one pair of opposed discharge electrodes having opposing electrode surfaces, said reaction chamber further including an inlet of a reaction gas for producing a desired semiconductor by a plasma glow discharge decomposition reaction thereof, and an outlet for reducing the pressure within said reaction chamber; and performing a discharge between said at least one pair of discharge electrodes in said reaction chamber in the presence of said reaction gas for producing said semiconductor, while arranging said deposition surface of said substrate just outside a plasma region formed between said discharge electrodes and locating said substrate deposition surface in substantially perpendicular relation with respect to said opposing electrode surfaces of said discharge electrodes, thereby depositing a film of said semiconductor on said deposition surface of said substrate.
Claim 2
Independent Claim
154 words
A method of forming a semiconductor film on a substrate, consisting essentially of: placing a substrate having a deposition surface in a reaction chamber having therein at least one pair of opposed discharge electrodes having opposing electrode surfaces, said reaction chamber further including an inlet of a reaction gas for producing a desired semiconductor by a plasma glow discharge decomposition reaction thereof, and an outlet for reducing the pressure within said reaction chamber; and performing a discharge between said at least one pair of discharge electrodes in said reaction chamber in the presence of said reaction gas for producing said semiconductor, while arranging said deposition surface of said substrate just outside a plasma region formed between said discharge electrodes and locating said substrate deposition surface in substantially perpendicular relation with respect to said opposing electrode surfaces of said discharge electrodes, thereby depositing a film of said semiconductor on said deposition surface of said substrate.
Claim 3
Dependent Claim
30 words
A method of forming a semiconductor film on a substrate according to claim 1, wherein said substrate is moved during depositing of said semiconductor film on said deposition surface thereof.
Claim 4
Dependent Claim
72 words
A method of forming a semiconductor film on a substrate according to claim 1, wherein said deposition surface of said substrate is a non-flat surface and wherein a distance between one side of said discharge electrodes, at which side thereof said substrate is arranged, and said non-flat deposition surface of said substrate is adjusted so as to maintain said distance uniform during depositing of said semiconductor film on said non-flat deposition surface.
Claim 5
Dependent Claim
47 words
A method of forming a semiconductor film on a substrate according to claim 1, wherein a pair of substrates each having a deposition surface are placed in said reaction chamber and arranged so as to hold a plasma region of said discharge between opposed deposition surfaces thereof.
Claim 6
Dependent Claim
29 words
A method of forming a semiconductor film on a substrate according to claim 1, wherein plural pairs of opposed discharge electrodes are arranged in parallel within one reaction chamber.
Claim 7
Dependent Claim
47 words
A method of forming a semiconductor film on a substrate according to claim 1, wherein said deposition surface of said substrate is a non-flat surface and said discharge electrodes are provide with curved side edges so as to correspond to said non-flat deposition surface of said substrate.
Claim 8
Dependent Claim
23 words
A method of forming a semiconductor film on a substrate according to claim 1, wherein said substrate has a corrugated curved deposition surface.
Claim 9
Dependent Claim
21 words
A method of forming a semiconductor film on a substrate according to claim 1, wherein said substrate is a cylindrical substrate.
Claim 10
Dependent Claim
27 words
A method of forming a semiconductor film on a substrate according to claim 1, wherein said substrate is provided with a film electrode on its deposition surface.
Claim 11
Dependent Claim
58 words
A method of forming a semiconductor film on a substrate according to claim 9, wherein said deposition surface of said substrate is a non-flat curved surface and said film electrode is divided into a plurality of electrodes extending in a parallel or intersecting direction with respect to an edge line of said non-flat curved surface of said substrate.
References Cited (Backward Citations)
US4064521A
Cited
US4252837A
Cited
US4473597A
Cited
US4461783A
Cited
JPS576854A
Cited
US4452828A
Cited
JPS5811261A
Cited
US4569719A
Cited
US4515107A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1990-06-01 | 1990-12-01 | 1991-06-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-06-01 | 1994-12-01 | 1995-06-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-06-01 | 1998-12-01 | 1999-06-02 | $7700.00 | Window Closed / Lapsed |