Patent US4670292A successfully refreshed from Google Patents.
US4670292A
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Method for injecting exotic atoms into a solid with electron beams
Assignee: The University of Osaka
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Filing: 1985-09-16
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Granted: 1987-06-02
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Expires: 2005-09-16
Abstract
Abstract A method for injecting exotic atoms into a solid with electron beams comprises irradiating a material having structure of two layers to which at least one thin film adheres with electron beams, and injecting the exotic atoms into an irradiation region. This method gives desired forms such as crystal, noncrystal, solid solution of the materials, depending on the conditions of electron irradiation.
Inventors
- 👤 Hiroshi Fujita
- 👤 Naoto Sumida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 12:04
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/90; C; C23; C23C; C23C10/00; C23C10/28; C23C12/00; C23C12/02; C23C26/00; C23C8/00; C23C8/06; C23C8/08; C23C8/10; C23C8/60
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
175 words
A thermal diffusion-free method for injecting exotic atoms into a solid substrate using an electron beam, the method comprising: providing a structure consisting of a solid substrate and a thin film comprised of at least one type of exotic atom provided on one surface of said solid substrate; and irradiating a predetermined region of said structure with an electron beam directed toward said thin film to cause aimed displacement of at least one type of said at least one type of exotic atom from said thin film into said solid substrate to provide a zone of mixed atoms in the irradiated region, said zone of mixed atoms having a concentration of said at least one type of displaced exotic atom which ranges up to supersaturation and is independent of the thermal equilibrium state, said electron beam having an energy which is greater than the threshold energy for the at least one type of displaced exotic atom, and said irradiation taking place at an irradiation temperature which is below that at which thermal diffusion takes place.
Claim 2
Dependent Claim
175 words
A thermal diffusion-free method for injecting exotic atoms into a solid substrate using an electron beam, the method comprising: providing a structure consisting of a solid substrate and a thin film comprised of at least one type of exotic atom provided on one surface of said solid substrate; and irradiating a predetermined region of said structure with an electron beam directed toward said thin film to cause aimed displacement of at least one type of said at least one type of exotic atom from said thin film into said solid substrate to provide a zone of mixed atoms in the irradiated region, said zone of mixed atoms having a concentration of said at least one type of displaced exotic atom which ranges up to supersaturation and is independent of the thermal equilibrium state, said electron beam having an energy which is greater than the threshold energy for the at least one type of displaced exotic atom, and said irradiation taking place at an irradiation temperature which is below that at which thermal diffusion takes place.
Claim 3
Dependent Claim
15 words
The method according to claim 1, wherein the irradiation temperature does not exceed 110° C.
Claim 4
Dependent Claim
15 words
The method according to claim 1, wherein the irradiation temperature does not exceed 20° C.
Claim 5
Dependent Claim
34 words
The method according to claim 1, wherein irradiation of said predetermined region with an electron beam is achieved by providing a controllable electromagnetic field and at least one electron lens for said electron beam.
Claim 6
Dependent Claim
55 words
The method according to claim 1, wherein intensity of the electron beam is controlled by one or more of controlling the convergence, the divergence, and the angle of incidence of the electron beam, whereby the concentration distribution of the at least one type of displaced exotic atom in said zone of mixed atoms is variable.
Claim 7
Dependent Claim
38 words
The method according to claim 1, wherein said electron beam has an energy which is greater than the threshold energy for at least one type of atom of the solid substrate whereby solid substrate atoms are also displaced.
Claim 8
Dependent Claim
182 words
A thermal diffusion-free method for injecting exotic atoms into a solid substrate using an electron beam, the method comprising: providing a structure consisting of a solid substrate and a plurality of thin films provided on one surface of said solid substrate, each of said plurality of thin films consisting of one type of exotic atom, which types of exotic atoms differ between adjacent layers; and irradiating a predetermined region of said structure with an electron beam directed toward said plurality of thin films to cause aimed displacement of at least one type of exotic atom from said plurality of thin films into said solid substrate to provide at least one zone of mixed atoms having a concentration of said at least one type of displaced exotic atom which ranges up to supersaturation and is independent of the thermal equilibrium state, said electron beam having an energy which is greater than the threshold energy for the at least one type of displaced exotic atom, and said irradiation taking place at an irradiation temperature which is below that at which thermal diffusion takes place.
Claim 9
Dependent Claim
182 words
A thermal diffusion-free method for injecting exotic atoms into a solid substrate using an electron beam, the method comprising: providing a structure consisting of a solid substrate and a plurality of thin films provided on one surface of said solid substrate, each of said plurality of thin films consisting of one type of exotic atom, which types of exotic atoms differ between adjacent layers; and irradiating a predetermined region of said structure with an electron beam directed toward said plurality of thin films to cause aimed displacement of at least one type of exotic atom from said plurality of thin films into said solid substrate to provide at least one zone of mixed atoms having a concentration of said at least one type of displaced exotic atom which ranges up to supersaturation and is independent of the thermal equilibrium state, said electron beam having an energy which is greater than the threshold energy for the at least one type of displaced exotic atom, and said irradiation taking place at an irradiation temperature which is below that at which thermal diffusion takes place.
Claim 10
Dependent Claim
15 words
The method according to claim 7, wherein the irradiation temperature does not exceed 110° C.
Claim 11
Dependent Claim
15 words
The method according to claim 7, wherein the irradiation temperature does not exceed 20° C.
Claim 12
Dependent Claim
34 words
The method according to claim 7, wherein irradiation of said predetermined region with an electron beam is achieved by providing a controllable electromagnetic field and at least one electron lens for said electron beam.
Claim 13
Dependent Claim
60 words
The method according to claim 7, wherein intensity of the electron beam is controlled by one or more of controlling the convergence, the divergence, and the angle of incidence of the electron beam, whereby the concentration distribution of the at least one type of displaced exotic atom in each of said at least one zone of mixed atoms is variable.
Claim 14
Dependent Claim
38 words
The method according to claim 7, wherein said electron beam has an energy which is greater than the threshold energy for at least one type of atom of the solid substrate whereby solid substrate atoms are also displaced.
References Cited (Backward Citations)
US2911533A
Cited
US3718502A
Cited
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