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US4667060A Expired / Lapsed US ⏱️ 0.0 years remaining

Back junction photovoltaic solar cell

Assignee: Spire Corp
•
Filing: 1985-05-28
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Granted: 1987-05-19
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Expires: 2005-05-28
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Abstract

Abstract A solar cell of novel construction is disclosed featuring the formation of a p-n junction at its rear surface. This allows for a reduction in series resistance and optimization of the p-n junction. The solar cell has a metallic front contact and is lightly doped to reduce contact resistance at the interface between the front contact and the front surface of the cell. The solar cell preferably is formed of either n-type or p-type silicon, with the p-n junction preferably formed therein by ion implantation. Preferably, the solar cell is about 50 micrometers thick and, possesses a conversion efficiency of at least 15% over an input intensity range of from about one to about 1,000 suns. The solar cell is particularly useful for concentrator solar cells intended for operation at high intensity (in excess of 500 suns).

Inventors

  • 👤 Mark B. Spitzer

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 08:51
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F77/00; H10F77/10; H10F77/14; H10F77/148; H10F77/20; H10F77/206; H10F77/211; H10F77/219; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 92 words
A solar cell comprising: (a) a semiconductor wafer having a front surface and a back surface; and (b) a p-n junction provided at said back surface thereof; (c) said front surface provided with a metallic front contact and being lightly doped to reduce contact resistance at the interface between said metallic front contact and said semiconductor wafer; (d) said p-n junction at said back surface being patterned; (e) said solar cell having a conversion efficiency of at least 15% over an input intensity range from about one sun to about 1,000 suns.
Claim 2
Dependent Claim 92 words
A solar cell comprising: (a) a semiconductor wafer having a front surface and a back surface; and (b) a p-n junction provided at said back surface thereof; (c) said front surface provided with a metallic front contact and being lightly doped to reduce contact resistance at the interface between said metallic front contact and said semiconductor wafer; (d) said p-n junction at said back surface being patterned; (e) said solar cell having a conversion efficiency of at least 15% over an input intensity range from about one sun to about 1,000 suns.
Claim 3
Dependent Claim 25 words
The solar cell of claim 1 wherein said front surface is further provided with a layer of silicon dioxide to reduce the recombination velocity thereat.
Claim 4
Dependent Claim 41 words
The solar cell of claim 2 wherein said front surface is further provided with an antireflective coating and wherein said metallic front contact is formed of successively evaporated layers of titanium and palladium, with a layer of silver being electroplated thereon.
Claim 5
Dependent Claim 18 words
The solar cell of claim 1 wherein said light doping at said front surface is effected by phosphorus.
Claim 6
Dependent Claim 72 words
The solar cell of claim 1 wherein said p-n junction at said back surface is formed by ion implantation, wherein said ion implanted p-n junction comprises a plurality of ion-implanted pocket junctions, and wherein said ion implanted pocket junctions are formed by a pocket array pattern comprising a plurality of squares, each about ten micrometers square formed on 50 micrometers centers, achieving a reduction in junction area by a factor of 25.
Claim 7
Dependent Claim 56 words
The solar cell of claim 1 wherein said back surface is provided with a patterned back p-n junction in the shape of a grating structure comprising a plurality of lines, each from about two micrometers to about five micrometers wide and centered on 500 micrometers, achieving a reduction in junction area by a factor of 100.
Claim 8
Dependent Claim 24 words
The solar cell of claim 1 which is a concentrator silicon solar cell designed for operation at high intensity input levels exceeding 500 suns.

References Cited (Backward Citations)

US4131488A Cited
US4131486A Cited
US4106047A Cited
US4348254A Cited
US4355196A Cited
JPS57187974A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-05-18 1990-11-17 1991-05-19 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-05-18 1994-11-17 1995-05-19 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-05-18 1998-11-17 1999-05-19 $7700.00 Window Closed / Lapsed

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