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US4666803A
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Photoconductive member for exhibiting photoconductivity upon illumination by electromagnetic light in the visible to ultraviolet range
Assignee: Toshiba Corp
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Filing: 1985-11-22
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Granted: 1987-05-19
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Expires: 2005-11-22
Abstract
Abstract A blocking layer is formed of amorphous silicon carbide (a-Si:C) or amorphous silicon nitride (a-Si:N) on a conductive substrate. A first photoconductive layer formed of a-Si:C or a-Si:N on the blocking layer contains 1×10 -6 to 1×10 -3 atomic % of a Group III or V element in the Periodic Table. A second photoconductive layer formed of on the first photoconductive layer contains 1×10 -6 to 1×10 -3 atomic % of a Group III or V element. The second photoconductive layer has a thickness of 0.1 to 45 μm. With this multilayer structure, a photosensitive member having high charging and potential holding properties can be obtained.
Inventors
- 👤 Mutsuki Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:02
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08235
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
169 words
A photoconductive member comprising: a conductive substrate; a blocking layer formed on said conductive substrate, said blocking layer being formed of amorphous silicon carbide or amorphous silicon nitride and containing 1×10 -3 to 1.0 atomic % of an element of Group III or V of the Periodic Table; a first photoconductive layer formed on said blocking layer, said first photoconductive layer being formed of amorphous silicon carbide or amorphous silicon nitride, containing 1×10 -6 to 1×10 -3 atomic % of an element of Group III of the Periodic Table, and the product of the mobility (cm 2 /sec V) and the lifetime (sec) of the holes in electron-hole pairs generated in light absorption being 1×10 -7 cm 2 /V or higher; and a second photoconductive layer formed on the first photoconductive layer, the second photoconductive layer being formed of amorphous silicon, having a thickness of 0.1 μm to 5 μm, and containing 1×10 -6 to 1×10 -3 atomic % of an element of Group III of the Periodic Table.
Claim 2
Dependent Claim
169 words
A photoconductive member comprising: a conductive substrate; a blocking layer formed on said conductive substrate, said blocking layer being formed of amorphous silicon carbide or amorphous silicon nitride and containing 1×10 -3 to 1.0 atomic % of an element of Group III or V of the Periodic Table; a first photoconductive layer formed on said blocking layer, said first photoconductive layer being formed of amorphous silicon carbide or amorphous silicon nitride, containing 1×10 -6 to 1×10 -3 atomic % of an element of Group III of the Periodic Table, and the product of the mobility (cm 2 /sec V) and the lifetime (sec) of the holes in electron-hole pairs generated in light absorption being 1×10 -7 cm 2 /V or higher; and a second photoconductive layer formed on the first photoconductive layer, the second photoconductive layer being formed of amorphous silicon, having a thickness of 0.1 μm to 5 μm, and containing 1×10 -6 to 1×10 -3 atomic % of an element of Group III of the Periodic Table.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-05-18 | 1990-11-17 | 1991-05-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-05-18 | 1994-11-17 | 1995-05-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-05-18 | 1998-11-17 | 1999-05-19 | $7700.00 | Window Closed / Lapsed |