Patent US4664939A successfully refreshed from Google Patents.
US4664939A
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US
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Vertical semiconductor processor
Assignee: United Solar Systems Corp
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Filing: 1986-03-10
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Granted: 1987-05-12
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Expires: 2006-03-10
Abstract
Abstract A vertical processor for the continuous deposition of semiconductor alloy material by glow discharge techniques. The vertical processor includes a plurality of operatively interconnected deposition chambers, at least one chamber of which includes a generally vertical cathode plate about each of the opposed faces of which a plasma region is developed and a substrate continuously passes for the deposition of semiconductor alloy material thereonto. Through the utilization of the vertical deposition scenario, the length of the processor may be substantially foreshortened, power consumption may be substantially decreased and feedstock gases may be more efficiently utilized.
Inventors
- 👤 Herbert Ovshinsky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:28
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/54; C23C16/545
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
139 words
An improved method for the continuous vapor deposition of a layer of semiconductor alloy material of a preselected conductivity type in each of a plurality of discrete deposition chambers, each chamber including a plasma region in which a precursor gaseous mixture of process gases is decomposed and deposited onto a substrate continuously advanced therethrough; the improved method adapted to foreshorten the length of at least one of the chambers and increase the utilization of the precursor gaseous mixture including the steps of: directing the substrate through at least one of the chambers in a non-linear path of travel; developing a plurality of plasma regions in the chambers through which the substrate is non-linearily directed; at least two of the plurality of plasma regions disposed in different non-linear portions of the path of travel through which the substrate is advanced.
Claim 2
Dependent Claim
139 words
An improved method for the continuous vapor deposition of a layer of semiconductor alloy material of a preselected conductivity type in each of a plurality of discrete deposition chambers, each chamber including a plasma region in which a precursor gaseous mixture of process gases is decomposed and deposited onto a substrate continuously advanced therethrough; the improved method adapted to foreshorten the length of at least one of the chambers and increase the utilization of the precursor gaseous mixture including the steps of: directing the substrate through at least one of the chambers in a non-linear path of travel; developing a plurality of plasma regions in the chambers through which the substrate is non-linearily directed; at least two of the plurality of plasma regions disposed in different non-linear portions of the path of travel through which the substrate is advanced.
Claim 3
Dependent Claim
18 words
A method as in claim 1, including the further step of providing an elongated web of substrate material.
Claim 4
Dependent Claim
39 words
A method as in claim 2, including the further step of training the web of substrate material about turning rollers for assuming said non-linear path of travel in the cahmber in which the plurality of plasma regions are developed.
Claim 5
Dependent Claim
39 words
A method as in claim 3, including the further step of providing electromagnetic energy to a cathode plate for developing an electromagnetic field in the plasma region formed between said plate and the web of substrate material moving therepast.
Claim 6
Dependent Claim
49 words
A method as in claim 4, including the further step of disposing the turning rollers so as to sequentially move the web of substrate material past both of the opposed faces of the cathode plate for depositing semiconductor alloy material from the plasma region developed adjacent each face thereof.
Claim 7
Dependent Claim
51 words
A method as in claim 5, including the further steps of disposing the cathode plate in a generally vertical plane; and directing the web of substrate material past each of the faces of the cathode plate in a plane of travel generally parallel to the vertical plane of the cathode plate.
Claim 8
Dependent Claim
34 words
A method as in claim 4, including the further step of perforating the cathode plate so that process gases introduced into either side of the cathode plate are uniformly distributed on both sides thereof.
Claim 9
Dependent Claim
36 words
A method as in claim 3, including the further steps of providing a plurality of turning rollers; and training the deposition surface of the web of substrate material about at least one of the turning rollers.
Claim 10
Dependent Claim
34 words
A method as in claim 8, including the further step of coating at least one face of the cathode plate with an insulating film to prevent the development of a plasma region adjacent thereto.
Claim 11
Dependent Claim
38 words
A method as in claim 2, including the further step of constructing and operatively disposing at least one of the turning rollers so that only the longitudinal edges of the web of substrate material are in contact therewith.
Claim 12
Dependent Claim
41 words
A method as in claim 2, including the further step of spacedly disposing magnets throughout each of the chambers for urging the web of substrate material into a generally planar configuration during the travel thereof through each of the plasma regions.
Claim 13
Dependent Claim
40 words
A method as in claim 2, including the further step of providing at least one triad of deposition chambers, each chamber of the triad adapted for the deposition of a layer of semiconductor alloy material of a preselected conductivity type.
Claim 14
Dependent Claim
69 words
A method as in claim 12, including the further steps of adapting a first chamber of the triad for the deposition of a layer of n-type semiconductor alloy material therein; adapting a second chamber of the triad for the deposition of a layer of intrinsic semiconductor alloy material therein; and adapting a third chamber of the triad for the deposition of a layer of p-type semiconductor alloy material therein.
Claim 15
Dependent Claim
29 words
A method as in claim 13, including the further step of providing at least two triads of deposition chambers for depositing a two cell tandem n-i-p type photovoltaic device.
Claim 16
Dependent Claim
28 words
A method as in claim 14, including the further step of providing at least the intrinsic chamber of one of the triads with the plurality of plasma regions.
Claim 17
Dependent Claim
29 words
A method as in claim 13, including the further step of providing at least three triads of deposition chambers for depositing a three cell tandem n-i-p type photovoltaic device.
Claim 18
Dependent Claim
27 words
A method as in claim 16, including the further step of providing at least the intrinsic chamber of one of the triads with the plurality of regions.
Claim 19
Dependent Claim
34 words
A method as in claim 1, including the further steps of providing at least one discrete substrate plate; and utilizing an elongated conveyor belt for transporting the discrete substrate plate through the deposition chambers.
Claim 20
Dependent Claim
40 words
A method as in claim 1, including the further steps of providing at least three plasma regions and introducing into one of the regions, a different precursor gaseous mixture than is introduced into at least another one of the regions.
Claim 21
Dependent Claim
42 words
A method as in claim 19, including the further step of introducing a different percentage of a least one component of the precursor gaseous mixture into at least one of the plasma regions for profiling the depositing layer of semiconductor alloy material.
Claim 22
Dependent Claim
50 words
A method as in claim 20, including the further step of establishing a different length of path of travel of the web of substrate material through at least one of the plasma regions than the length of the path of travel of the web through at least one other region.
References Cited (Backward Citations)
US4557944A
Cited
US4515107A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-05-11 | 1990-11-10 | 1991-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-05-11 | 1994-11-10 | 1995-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-05-11 | 1998-11-10 | 1999-05-12 | $7700.00 | Window Closed / Lapsed |