US4664746A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Creating or removing a conductive layer on an insulator over a semiconductor
Assignee: HP Inc
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Filing: 1986-04-29
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Granted: 1987-05-12
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Expires: 2006-04-29
Abstract
Abstract A new phenomenon in integrated circuit etch processing is presented, explained and utilized to permit better removal of layers overlying integrated circuit structures, and if desired, the formation of conductive layers on such structures by a less complicated and lower temperature process than has been possible by conventional techniques.
Inventors
- 👤 David E. Hackleman
- 👤 Ralph H. Nielsen, Jr.
- 👤 Marzio A. Leban
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:31
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/924; Y10S438/97
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
85 words
A method for creating a conductive reduced layer on an insulating layer over a surface of a semiconductor substrate with a fluid bath comprising: adding an electrolyte to the fluid bath; submerging the semiconductor substrate in the fluid bath with electrolyte; applying a negative voltage with respect to the surface of the semiconductor substrate and the fluid bath with electrolyte to create an electric field across the insulating layer, whereby at least a portion of the insulating layer is converted to a conductive reduced species.
Claim 2
Independent Claim
85 words
A method for creating a conductive reduced layer on an insulating layer over a surface of a semiconductor substrate with a fluid bath comprising: adding an electrolyte to the fluid bath; submerging the semiconductor substrate in the fluid bath with electrolyte; applying a negative voltage with respect to the surface of the semiconductor substrate and the fluid bath with electrolyte to create an electric field across the insulating layer, whereby at least a portion of the insulating layer is converted to a conductive reduced species.
Claim 3
Dependent Claim
31 words
A method as in claim 1 wherein the applied negative voltage comprises a voltage between 0.01 volts and 1.0 volts for each nanometer of thickness of the conductive reduced species desired.
References Cited (Backward Citations)
US2980594A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-05-11 | 1990-11-10 | 1991-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-05-11 | 1994-11-10 | 1995-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-05-11 | 1998-11-10 | 1999-05-12 | $7700.00 | Window Closed / Lapsed |